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SCMP65R190BF

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SiC MOSFETTO220F-3L
规格书下载

参数规格

车规 (Y/N)
N
封装
TO220F-3L
结构
N
结温 Tj
175 °C
漏源电压 VDS
650 V
漏极电流 ID
9 A
栅源电压 VGS 最大
-10/+22 V
阈值电压 VGS(th) 典型
3.2 V
导通电阻 RDS(ON)@18V,25°C 典型
190 mΩ
导通电阻 RDS(ON)@18V,25°C 最大
240 mΩ
导通电阻 RDS(ON)@18V,175°C 典型
265 mΩ
雪崩能量 EAS 最大
164 mJ
输入电容 Ciss 典型
261 pF
输出电容 Coss 典型
22 pF
反向传输电容 Crss 典型
3 pF
总栅极电荷 Qg 典型
13.5 nC
最小包装量
1000 pcs
最小订购量
5000 pcs

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在线规格书

以下内容整理自原厂规格书，实际参数以原厂正式文件为准。

SCMP65R190BF

650V N-Channel Silicon Carbide Power MOSFET

Product Summary
VDS RDS(ON)_TYP I_D_MAX
650 V 190 mΩ @VGS = 18V 9.0 A

TO220F-3L

PIN Configuration (Top View): G — D — S

Features
  • High blocking voltage with low On-Resistance
  • High speed switching with low capacitances
  • Easy to parallel and simple to drive
  • Avalanche ruggedness
  • Halogen free, RoHS compliant
Benefits
  • Higher system efficiency
  • Reduced cooling requirements
  • Increased power density
  • Increased system switching frequency
Applications
  • Solar inverters
  • Switch mode power supplies
  • High voltage DC/DC converters
  • Battery chargers
  • Motor drives
  • Pulsed power applications
Ordering Information
Orderable Part Number Package Type Device Marking Form Quantity (pcs)
SCMP65R190BF TO220F-3L P65R190B Tube 50
Maximum Ratings (@ TC = 25°C, unless otherwise specified.)
Parameter Symbol Value Unit
Drain - Source Voltage VDS 650 V
Gate - Source Voltage (Absolute maximum values) VGSmax -10/+22 V
Gate - Source Voltage (Recommended operating values) VGSop -5/+18 V
Continuous Drain Current (VGS = 18V) (1) TC = 25°C ID 9.0 A
Continuous Drain Current (VGS = 18V) (1) TC = 100°C ID 6.4 A
Pulsed Drain Current (2) IDM 36 A
Single Pulse Avalanche Energy (3) EAS 164 mJ
Power Dissipation TC = 25°C PD 43 W
Power Dissipation TC = 100°C PD 22 W
Junction & Storage Temperature Range TJ, TSTG -55 ~ +175 °C
Thermal Characteristics
Parameter Symbol Typ. Max. Unit
Thermal Resistance, Junction-to-Ambient (4) R_θJA 40 50 °C/W
Thermal Resistance, Junction-to-Case (5) R_θJC 2.7 3.5 °C/W

Electrical Characteristics (@ TJ = 25°C, unless otherwise specified.)

Off Characteristics (6)
Parameter Symbol Test Condition Min. Typ. Max. Unit
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 1.0mA 650 — — V
Zero Gate Voltage Drain Current IDSS VDS = 650V, VGS = 0V — — 100 µA
Gate-Source Leakage Current IGSS VGS = +22V, VDS = 0V — — 200 nA
Gate-Source Leakage Current IGSS VGS = -10V, VDS = 0V — — -200 nA
On Characteristics (6)
Parameter Symbol Test Condition Min. Typ. Max. Unit
Gate Threshold Voltage VGS(th) VGS = VDS, ID = 1.0mA, TJ = 25°C 2.1 3.2 4.2 V
Gate Threshold Voltage VGS(th) VGS = VDS, ID = 1.0mA, TJ = 175°C — 2.3 — V
Static Drain-Source On-Resistance RDS(ON) VGS = 18V, ID = 5.0A, TJ = 25°C — 190 240 mΩ
Static Drain-Source On-Resistance RDS(ON) VGS = 18V, ID = 5.0A, TJ = 175°C — 265 — mΩ
Static Drain-Source On-Resistance RDS(ON) VGS = 15V, ID = 5.0A, TJ = 25°C — 250 — mΩ
Static Drain-Source On-Resistance RDS(ON) VGS = 15V, ID = 5.0A, TJ = 175°C — 290 — mΩ
Diodes Forward Voltage VSD VGS = -5.0V, ISD = 5.0A, TJ = 25°C — 5.0 — V
Diodes Forward Voltage VSD VGS = -5.0V, ISD = 5.0A, TJ = 175°C — 4.4 — V
Dynamic Characteristics (7)
Parameter Symbol Test Condition Min. Typ. Max. Unit
Input Capacitance Ciss VDS = 400V, VGS = 0V, f = 1MHz — 261 — pF
Output Capacitance Coss VDS = 400V, VGS = 0V, f = 1MHz — 22 — pF
Reverse Transfer Capacitance Crss VDS = 400V, VGS = 0V, f = 1MHz — 3.0 — pF
Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz — 32 — Ω
Switching Characteristics (7)
Parameter Symbol Test Condition Min. Typ. Max. Unit
Turn-On Switching Loss Eon VDS = 400V, ID = 5.0A, RG = 10Ω, VGS = -5/18V — 20 — µJ
Turn-Off Switching Loss Eoff VDS = 400V, ID = 5.0A, RG = 10Ω, VGS = -5/18V — 7.8 — µJ
Total Switching Loss Etot VDS = 400V, ID = 5.0A, RG = 10Ω, VGS = -5/18V — 28 — µJ
Turn-On Delay Time td(on) VDS = 400V, ID = 5.0A, RG = 10Ω, VGS = -5/18V — 8.2 — ns
Rise Time tr VDS = 400V, ID = 5.0A, RG = 10Ω, VGS = -5/18V — 17 — ns
Turn-Off Delay Time td(off) VDS = 400V, ID = 5.0A, RG = 10Ω, VGS = -5/18V — 18 — ns
Fall Time tf VDS = 400V, ID = 5.0A, RG = 10Ω, VGS = -5/18V — 12 — ns
Gate Charge Characteristics (7)
Parameter Symbol Test Condition Min. Typ. Max. Unit
Total Gate Charge (VGS = 18V) Qg VDS = 400V, ID = 5.0A, VGS = -5/18V — 13.5 — nC
Gate-Source Charge Qgs VDS = 400V, ID = 5.0A, VGS = -5/18V — 3.2 — nC
Gate-Drain Charge Qgd VDS = 400V, ID = 5.0A, VGS = -5/18V — 5.3 — nC
Drain-Source Diode Characteristics (7)
Parameter Symbol Test Condition Min. Typ. Max. Unit
Body Diode Reverse Recovery Time trr VDS = 400V, VGS = -5.0V, ISD = 5.0A, di/dt = 1000A/µs — 8.3 — ns
Body Diode Reverse Recovery Charge Qrr VDS = 400V, VGS = -5.0V, ISD = 5.0A, di/dt = 1000A/µs — 21 — nC
Peak Reverse Recovery Current Irrm VDS = 400V, VGS = -5.0V, ISD = 5.0A, di/dt = 1000A/µs — 4.3 — A
Diode Forward Current IS TC = 25°C — — 9 A

Notes:

  1. This current is chip limited, which is calculated based on Rthjc.
  2. This current is calculated on single pulse with 10µs Single Pulse.
  3. Defined by design, not subject to production test, EAS condition: TJ = 25°C, VDD = 325V, VGS = 10V, L = 10mH.
  4. Device mounted on FR-4 substrate PC board with 2oz copper in 1inch square cooling area.
  5. Thermal resistance from junction to the exposed pad.
  6. Short duration pulse test used to minimize self-heating effect.
  7. Defined by design, not subject to production.

Typical Electrical and Thermal Characteristics

（原 datasheet 含以下特性曲线图，此处略）

  • Figure 1: Output Characteristics TJ = 25°C
  • Figure 2: Output Characteristics TJ = 175°C
  • Figure 3: On-Resistance vs. Junction Temperature (ID = 5.0A, VGS = 18V / 15V)
  • Figure 4: Transfer Characteristics (VDS = 20V, TJ = 25°C / 175°C)
  • Figure 5: Body Diode Characteristic, TJ = 25°C (VGS = 0V / -5.0V)
  • Figure 6: Body Diode Characteristic, TJ = 175°C (VGS = 0V / -5.0V)
  • Figure 7: Gate Threshold Variation vs. Junction Temperature (ID = 250µA / 1.0mA)
  • Figure 8: Gate Charge Characteristics (ID = 5.0A)
  • Figure 9: Capacitance Characteristics (Ciss, Coss, Crss vs. VDS)
  • Figure 10: Power Derating (PD vs. TC)
  • Figure 11: Current Derating (ID vs. TC)
  • Figure 12: Switching Losses vs. Drain Current (Eon, Eoff, Etot)
  • Figure 13: Switching Losses vs. Gate Resistance (Eon, Eoff, Etot)
  • Figure 14: Safe Operating Area (TJ(Max) = 175°C, TC = 25°C; DC / 1.0ms / 100µs / 10µs / 1.0µs)
  • Figure 15: Normalized Maximum Transient Thermal Impedance (δ = 0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse; 1. Duty cycle δ = t1 / t2; 2. R_θJC(t) = r(t) × R_θJC)

TO220F-3L Package Outline

Package Notes:

  1. Dimensioning and tolerancing per ASME Y14.5M-1994.
  2. All dimensions in millimeter (angle in degree).
  3. Dimensions D and E1 do not include mold flash.
DIM. MIN. NOM. MAX.
A 4.50 4.70 4.90
A1 2.34 2.54 2.74
A2 2.50 2.76 2.96
b 0.60 0.80 1.00
b1 -- -- 1.47
b2 1.10 -- 1.38
c 0.40 0.50 0.63
c1 0.70 REF
D 9.96 -- 10.40
e 2.54 BSC
E 28.30 28.85 29.35
E1 15.67 15.87 16.10
G 3.20 -- 3.40
L 12.68 -- 13.30
L1 -- -- 3.50
L2 6.48 6.68 6.88
P 3.30 REF
θ 0° -- 12°

（所有尺寸单位：毫米；角度单位：度）

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