SCMP80R130BF 产品图

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SCMP80R130BF

中晶新源 SineSemi核心代理商

SiC MOSFETTO220F-3L
规格书下载

参数规格

车规 (Y/N)
N
封装
TO220F-3L
结构
N
结温 Tj
175 °C
漏源电压 VDS
800 V
漏极电流 ID
25 A
栅源电压 VGS 最大
-10/+22 V
阈值电压 VGS(th) 典型
3.2 V
导通电阻 RDS(ON)@18V,25°C 典型
125 mΩ
导通电阻 RDS(ON)@18V,25°C 最大
150 mΩ
导通电阻 RDS(ON)@18V,175°C 典型
180 mΩ
输入电容 Ciss 典型
706 pF
输出电容 Coss 典型
43 pF
反向传输电容 Crss 典型
3 pF
总栅极电荷 Qg 典型
29 nC
最小包装量
1000 pcs
最小订购量
5000 pcs

不确定怎么选？阅读《SiC MOSFET 选型指南》 →

封装与电路符号

SCMP80R130BF 封装外形、引脚配置与电路符号图
封装外形 · 引脚配置 · 电路符号（源自中晶新源官方 datasheet）

在线规格书

以下内容整理自原厂规格书，实际参数以原厂正式文件为准。

SCMP80R130BF

800V N-Channel Silicon Carbide Power MOSFET

Product Summary
VDS RDS(ON), typ ID, max
800 V 125 mΩ @ VGS = 18V 25 A

TO220F-3L

Maximum Ratings (@ TC = 25°C, unless otherwise specified.)
Parameter Symbol Test Condition Value Unit
Drain - Source Voltage VDSmax VGS = 0V, ID = 100µA 800 V
Gate - Source Voltage VGSmax Absolute maximum values -10/+22 V
Gate - Source Voltage VGSop Recommended operating values -5/+18 V
Continuous Drain Current ID TC = 25°C 25 A
TC = 100°C 17 A
Junction & Storage Temperature Range TJ, TSTG — -55 ~ +175 °C
Thermal Characteristics
Parameter Symbol Typ Max Unit
Thermal Resistance, Junction-to-Ambient R_θJA — — °C/W
Thermal Resistance, Junction-to-Case R_θJC — — °C/W

Electrical Characteristics (@ TJ = 25°C, unless otherwise specified.)

Off Characteristics
Parameter Symbol Test Condition Min Typ Max Units
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 100µA 800 — — V
Zero Gate Voltage Drain Current IDSS VDS = 800V, VGS = 0V — 1.0 100 µA
Gate-Source Leakage Current IGSS VGS = +22V, VDS = 0V — — 100 nA
VGS = -10V, VDS = 0V — — 100 nA
On Characteristics
Parameter Symbol Test Condition Min Typ Max Units
Gate Threshold Voltage VGS(th) VGS = VDS, IDS = 2.5mA, TJ = 25°C 2.2 3.2 4.2 V
VGS = VDS, IDS = 2.5mA, TJ = 175°C — 2.3 — V
Static Drain-Source On-Resistance RDS(on) VGS = 18V, ID = 10A, TJ = 25°C — 125 150 mΩ
VGS = 18V, ID = 10A, TJ = 175°C — 180 — mΩ
VGS = 15V, ID = 10A, TJ = 25°C — 175 — mΩ
VGS = 15V, ID = 10A, TJ = 175°C — 195 — mΩ
VGS = 12V, ID = 10A, TJ = 25°C — 330 — mΩ
VGS = 12V, ID = 10A, TJ = 175°C — 240 — mΩ
Diode Forward Voltage VSD VGS = -5.0V, ISD = 5.0A, TJ = 25°C — 3.5 — V
VGS = -5.0V, ISD = 5.0A, TJ = 175°C — 3.2 — V
Dynamic Characteristics
Parameter Symbol Test Condition Min Typ Max Units
Input Capacitance Ciss VDS = 400V, VGS = 0V, f = 1MHz — 706 — pF
Output Capacitance Coss — 43 — pF
Reverse Transfer Capacitance Crss — 3.0 — pF
Internal Gate Resistance RG(int) f = 1MHz, ID = 0A — 13.0 — Ω
Switching Characteristics
Parameter Symbol Test Condition Min Typ Max Units
Turn-On Switching Loss Eon VDS = 400V, VGS = -5/+18V, ID = 10A, RG(ext) = 5.1Ω — 40 — µJ
Turn-Off Switching Loss Eoff — 18 — µJ
Turn-On Delay Time td(on) — 6.0 — ns
Rise Time tr — 14 — ns
Turn-Off Delay Time td(off) — 10 — ns
Fall Time tf — 6.0 — ns
Gate Charge Characteristics
Parameter Symbol Test Condition Min Typ Max Units
Total Gate Charge Qg VDS = 400V, VGS = -5/18V, ID = 10A — 29 — nC
Gate-Source Charge Qgs — 12 — nC
Gate-Drain Charge Qgd — 4.0 — nC
Drain-Source Diode Characteristics
Parameter Symbol Test Condition Min Typ Max Units
Reverse Recovery Time trr VR = 400V, VGS = -5.0V, ISD = 10A, di/dt = 1000A/µs — 30 — ns
Reverse Recovery Charge Qrr — 55 — nC
Peak Reverse Recovery Current IRRM — 3.6 — A
Continuous Diode Forward Current IS TC = 25°C — — 29 A
TC = 100°C — — 17 A
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