SCMP80R390BU 产品图

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SCMP80R390BU

中晶新源 SineSemi核心代理商

SiC MOSFETTO252-3L
规格书下载

参数规格

车规 (Y/N)
N
封装
TO252-3L
结构
N
结温 Tj
175 °C
漏源电压 VDS
800 V
漏极电流 ID
9 A
栅源电压 VGS 最大
-10/+22 V
阈值电压 VGS(th) 典型
3.4 V
导通电阻 RDS(ON)@18V,25°C 典型
390 mΩ
导通电阻 RDS(ON)@18V,25°C 最大
450 mΩ
导通电阻 RDS(ON)@18V,175°C 典型
520 mΩ
输入电容 Ciss 典型
208 pF
输出电容 Coss 典型
18 pF
反向传输电容 Crss 典型
1.8 pF
总栅极电荷 Qg 典型
10.6 nC
最小包装量
2500 pcs
最小订购量
25000 pcs

不确定怎么选？阅读《SiC MOSFET 选型指南》 →

封装与电路符号

SCMP80R390BU 封装外形、引脚配置与电路符号图
封装外形 · 引脚配置 · 电路符号（源自中晶新源官方 datasheet）

在线规格书

以下内容整理自原厂规格书，实际参数以原厂正式文件为准。

SCMP80R390BU

800V N-Channel Silicon Carbide Power MOSFET

Product Summary
VDS RDS(ON), typ ID, max
800 V 390 mΩ @ VGS = 18V 9.0 A

TO252-3L

Maximum Ratings (@ TC = 25°C, unless otherwise specified.)
Parameter Symbol Test Condition Value Unit
Drain - Source Voltage VDSmax VGS = 0V, ID = 100µA 800 V
Gate - Source Voltage VGSmax Absolute maximum values -10/+22 V
Gate - Source Voltage VGSop Recommended operating values -5/+18 V
Continuous Drain Current (1) ID TC = 25°C 9.0 A
TC = 100°C 6.0 A
Pulsed Drain Current (2) IDM — 26 A
Total Power Dissipation PTOT TC = 25°C 52 W
Junction & Storage Temperature Range TJ, TSTG — -55 ~ +175 °C
Thermal Characteristics
Parameter Symbol Typ Max Unit
Thermal Resistance, Junction-to-Ambient R_θJA 40 — °C/W
Thermal Resistance, Junction-to-Case R_θJC 2.88 — °C/W

Electrical Characteristics (@ TJ = 25°C, unless otherwise specified.)

Off Characteristics
Parameter Symbol Test Condition Min Typ Max Units
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 1.0mA 800 — — V
Zero Gate Voltage Drain Current IDSS VDS = 800V, VGS = 0V — 2 100 µA
Gate-Source Leakage Current IGSS+ VGS = +22V, VDS = 0V — — 200 nA
Gate-Source Leakage Current IGSS- VGS = -10V, VDS = 0V — — 200 nA
On Characteristics
Parameter Symbol Test Condition Min Typ Max Units
Gate Threshold Voltage VGS(th) VGS = VDS, IDS = 1.0mA, TJ = 25°C 2.2 3.4 4.2 V
VGS = VDS, IDS = 1.0mA, TJ = 175°C — 2.6 — V
Static Drain-Source On-Resistance RDS(on) VGS = 18V, ID = 5.0A, TJ = 25°C — 390 450 mΩ
VGS = 18V, ID = 5.0A, TJ = 175°C — 520 — mΩ
Diode Forward Voltage VSD VGS = -5V, ISD = 2.5A, TJ = 25°C — 4.0 — V
VGS = -5V, ISD = 2.5A, TJ = 175°C — 3.6 — V
Dynamic Characteristics
Parameter Symbol Test Condition Min Typ Max Units
Input Capacitance Ciss VDS = 400V, VGS = 0V, f = 1MHz — 208 — pF
Output Capacitance Coss — 18 — pF
Reverse Transfer Capacitance Crss — 1.8 — pF
Internal Gate Resistance RG(int) f = 1MHz, ID = 0A — 59 — Ω
Switching Characteristics
Parameter Symbol Test Condition Min Typ Max Units
Turn-On Switching Energy Eon VDD = 400V, ID = 5.0A, RG = 10Ω, VGS = -5/18V — 25 — µJ
Turn-Off Switching Energy Eoff — 10 — µJ
Turn-On Delay Time td(on) VDD = 400V, ID = 5.0A, RG = 10Ω, VGS = -5/18V — 5 — ns
Rise Time tr — 17 — ns
Turn-Off Delay Time td(off) — 8 — ns
Fall Time tf — 10 — ns
Gate Charge Characteristics
Parameter Symbol Test Condition Min Typ Max Units
Total Gate Charge Qg VDD = 400V, VGS = -5/18V, ID = 5.0A — 10.6 — nC
Gate-Source Charge Qgs — 5.1 — nC
Gate-Drain Charge Qgd — 2.2 — nC
Drain-Source Diode Characteristics
Parameter Symbol Test Condition Min Typ Max Units
Reverse Recovery Time trr VDD = 400V, VGS = -5V, ISD = 5.0A, di/dt = 1000A/µs — 50 — ns
Reverse Recovery Charge Qrr — 38 — nC
Peak Reverse Recovery Current IRRM — 2.4 — A
Continuous Diode Forward Current (3) ISD TJ = 25°C — — 11 A
TJ = 175°C — — 6.0 A

Notes:

  1. Continuous Drain Current is limited by package.
  2. Pulse width is limited by Safe Operating Area (SOA).
  3. Continuous Diode Forward Current is limited by bonding wires.
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