SCMP65R190BU 产品图

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SCMP65R190BU

中晶新源 SineSemi核心代理商

SiC MOSFETTO252-3L
规格书下载

参数规格

车规 (Y/N)
N
封装
TO252-3L
结构
N
结温 Tj
175 °C
漏源电压 VDS
650 V
漏极电流 ID
12.5 A
栅源电压 VGS 最大
-10/+22 V
阈值电压 VGS(th) 典型
3.2 V
导通电阻 RDS(ON)@18V,25°C 典型
190 mΩ
导通电阻 RDS(ON)@18V,25°C 最大
240 mΩ
导通电阻 RDS(ON)@18V,175°C 典型
265 mΩ
雪崩能量 EAS 最大
164 mJ
输入电容 Ciss 典型
261 pF
输出电容 Coss 典型
22 pF
反向传输电容 Crss 典型
3 pF
总栅极电荷 Qg 典型
13.5 nC
最小包装量
2500 pcs
最小订购量
25000 pcs

不确定怎么选？阅读《SiC MOSFET 选型指南》 →

封装与电路符号

SCMP65R190BU 封装外形、引脚配置与电路符号图
封装外形 · 引脚配置 · 电路符号（源自中晶新源官方 datasheet）

在线规格书

以下内容整理自原厂规格书，实际参数以原厂正式文件为准。

SCMP65R190BU

650V N-Channel Silicon Carbide Power MOSFET

Product Summary
VDS RDS(ON), typ ID, max
650 V 190 mΩ @ VGS = 18V 12.5 A

TO252-3L

Maximum Ratings (@ TC = 25°C, unless otherwise specified.)
Parameter Symbol Value Unit
Drain - Source Voltage VDS 650 V
Gate - Source Voltage (Absolute maximum) VGSmax -10/+22 V
Gate - Source Voltage (Recommended operating) VGSop -5/+18 V
Continuous Drain Current (VGS = 18V) (1) (TC = 25°C) ID 12.5 A
Continuous Drain Current (VGS = 18V) (1) (TC = 100°C) ID 8.8 A
Pulsed Drain Current (2) IDM 45 A
Single Pulse Avalanche Energy (3) EAS 164 mJ
Power Dissipation (TC = 25°C) PD 83 W
Power Dissipation (TC = 100°C) PD 42 W
Junction & Storage Temperature Range TJ, TSTG -55 ~ +175 °C
Thermal Characteristics
Parameter Symbol Typ Max Unit
Thermal Resistance, Junction-to-Ambient (4) R_θJA 40 50 °C/W
Thermal Resistance, Junction-to-Case (5) R_θJC 1.5 1.8 °C/W

Electrical Characteristics (@ TJ = 25°C, unless otherwise specified.)

Off Characteristics (6)
Parameter Symbol Test Condition Min Typ Max Units
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 1.0mA 650 — — V
Zero Gate Voltage Drain Current IDSS VDS = 650V, VGS = 0V — — 100 µA
Gate-Source Leakage Current IGSS VGS = +22V, VDS = 0V — — 200 nA
VGS = -10V, VDS = 0V — — -200 nA
On Characteristics (6)
Parameter Symbol Test Condition Min Typ Max Units
Gate Threshold Voltage VGS(th) VGS = VDS, ID = 1.0mA, TJ = 25°C 2.1 3.2 4.2 V
VGS = VDS, ID = 1.0mA, TJ = 175°C — 2.3 — V
Static Drain-Source On-Resistance RDS(on) VGS = 18V, ID = 5.0A, TJ = 25°C — 190 240 mΩ
VGS = 18V, ID = 5.0A, TJ = 175°C — 265 — mΩ
VGS = 15V, ID = 5.0A, TJ = 25°C — 250 — mΩ
VGS = 15V, ID = 5.0A, TJ = 175°C — 290 — mΩ
Diode Forward Voltage VSD VGS = -5.0V, ISD = 5.0A, TJ = 25°C — 5.0 — V
VGS = -5.0V, ISD = 5.0A, TJ = 175°C — 4.4 — V
Dynamic Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Units
Input Capacitance Ciss VDS = 400V, VGS = 0V, f = 1MHz — 261 — pF
Output Capacitance Coss — 22 — pF
Reverse Transfer Capacitance Crss — 3.0 — pF
Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz — 32 — Ω
Switching Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Units
Turn-On Switching Loss Eon VDS = 400V, ID = 5.0A, RG = 10Ω, VGS = -5/18V — 20 — µJ
Turn-Off Switching Loss Eoff — 7.8 — µJ
Total Switching Loss Etot — 28 — µJ
Turn-On Delay Time td(on) VDS = 400V, ID = 5.0A, RG = 10Ω, VGS = -5/18V — 8.2 — ns
Rise Time tr — 17 — ns
Turn-Off Delay Time td(off) — 18 — ns
Fall Time tf — 12 — ns
Gate Charge Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Units
Total Gate Charge (VGS = 18V) Qg VDS = 400V, ID = 5.0A, VGS = -5/18V — 13.5 — nC
Gate-Source Charge Qgs — 3.2 — nC
Gate-Drain Charge Qgd — 5.3 — nC
Drain-Source Diode Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Units
Body Diode Reverse Recovery Time trr VDS = 400V, VGS = -5.0V, ISD = 5.0A, di/dt = 1000A/µs — 8.3 — ns
Body Diode Reverse Recovery Charge Qrr — 21 — nC
Peak Reverse Recovery Current Irrm — 4.3 — A
Diode Forward Current IS TC = 25°C — — 12 A

Notes:

  1. This current is chip limited, which is calculated based on Rthjc.
  2. This current is calculated on single pulse with 10µs Single Pulse.
  3. Defined by design, not subject to production test, EAS condition: TJ = 25°C, VDD = 325V, VGS = 10V, L = 10mH.
  4. Device mounted on FR-4 substrate PC board with 2oz copper in 1inch square cooling area.
  5. Thermal resistance from junction to the exposed pad.
  6. Short duration pulse test used to minimize self-heating effect.
  7. Defined by design, not subject to production.
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