SCMP65R15ATLB 产品图

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SCMP65R15ATLB

中晶新源 SineSemi核心代理商

SiC MOSFETTOLL
规格书下载

参数规格

车规 (Y/N)
N
封装
TOLL
结构
N
结温 Tj
175 °C
漏源电压 VDS
650 V
漏极电流 ID
134 A
栅源电压 VGS 最大
-10/+22 V
阈值电压 VGS(th) 典型
2.8 V
导通电阻 RDS(ON)@18V,25°C 典型
15 mΩ
导通电阻 RDS(ON)@18V,25°C 最大
21 mΩ
导通电阻 RDS(ON)@18V,175°C 典型
20 mΩ
输入电容 Ciss 典型
3525 pF
输出电容 Coss 典型
297 pF
反向传输电容 Crss 典型
16 pF
总栅极电荷 Qg 典型
146 nC
最小包装量
2000 pcs
最小订购量
20000 pcs

不确定怎么选？阅读《SiC MOSFET 选型指南》 →

封装与电路符号

SCMP65R15ATLB 封装外形、引脚配置与电路符号图
封装外形 · 引脚配置 · 电路符号（源自中晶新源官方 datasheet）

在线规格书

以下内容整理自原厂规格书，实际参数以原厂正式文件为准。

SCMP65R15ATLB

650V N-Channel Silicon Carbide Power MOSFET

Product Summary
VDS RDS(ON), typ ID, max
650 V 15 mΩ @ VGS = 18V 134 A

TOLL

Maximum Ratings (@ TC = 25°C, unless otherwise specified.)
Parameter Symbol Value Unit
Drain - Source Voltage VDSmax 650 V
Gate - Source Voltage (DC) VGS -10/+22 V
Gate - Source Voltage (Operating) VGSop -5/+18 V
Continuous Drain Current (TC = 25°C) ID 134 A
Continuous Drain Current (TC = 100°C) ID 96 A
Pulsed Drain Current IDM 375 A
Power Dissipation (TC = 25°C) PD 500 W
Power Dissipation Derate Above 25°C — 3.43 W/°C
Junction & Storage Temperature Range TJ, TSTG -55 ~ +175 °C
Maximum Lead Temperature for Soldering, 1/8" from Case for 10 Seconds TL 260 °C
Thermal Characteristics
Parameter Symbol Typ Max Unit
Thermal Resistance, Junction-to-Ambient R_θJA — 40 °C/W
Thermal Resistance, Junction-to-Case R_θJC — 0.30 °C/W

Electrical Characteristics (@ TJ = 25°C, unless otherwise specified.)

Off Characteristics
Parameter Symbol Test Condition Min Typ Max Units
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 1.0mA 650 — — V
Zero Gate Voltage Drain Current IDSS VDS = 650V, VGS = 0V — 1.0 100 µA
VDS = 650V, VGS = 0V, TJ = 175°C — 10.0 — µA
Gate-Source Leakage Current IGSS VGS = +22V, VDS = 0V — — +100 nA
VGS = -10V, VDS = 0V — — -100 nA
On Characteristics
Parameter Symbol Test Condition Min Typ Max Units
Gate Threshold Voltage VGS(th) VGS = VDS, ID = 20.3mA (tested after VGS = 22V, 1ms pulse) 1.8 2.8 4.5 V
Static Drain-Source On-Resistance RDS(on) VGS = 18V, ID = 60A — 15 21 mΩ
VGS = 18V, ID = 60A, TJ = 175°C — 20 — mΩ
Forward Transconductance gfs VGS = 20V, ID = 60A — 40.8 — S
Diode Forward Voltage VSD VGS = -5.0V, ISD = 60A — 4.4 — V
Dynamic Characteristics
Parameter Symbol Test Condition Min Typ Max Units
Input Capacitance Ciss — 3525 — pF
Output Capacitance Coss VDS = 400V, VGS = 0V, f = 250kHz — 297 — pF
Reverse Transfer Capacitance Crss — 16.0 — pF
Stored Energy in Output Capacitance Eoss VDS = 0V to 400V, VGS = 0V — 36.5 — µJ
Internal Gate Resistance RG f = 1MHz — 2.2 — Ω
Switching Characteristics
Parameter Symbol Test Condition Min Typ Max Units
Turn-On Switching Loss Eon VDS = 400V, VGS = -3/18V, ID = 60A, RG = 5.6Ω — 146 — µJ
Turn-Off Switching Loss Eoff — 279 — µJ
Total Switching Loss Etot — 425 — µJ
Turn-On Delay Time td(on) — 28.8 — ns
Rise Time tr — 25.7 — ns
Turn-Off Delay Time td(off) — 60.1 — ns
Fall Time tf — 10.5 — ns
Gate Charge Characteristics
Parameter Symbol Test Condition Min Typ Max Units
Total Gate Charge Qg(tot) VDS = 400V, VGS = -3/18V, ID = 60A, Inductive load — 146 — nC
Gate-Source Charge Qgs — 45 — nC
Gate-Drain Charge Qgd — 36 — nC
Drain-Source Diode Characteristics
Parameter Symbol Test Condition Min Typ Max Units
Reverse Recovery Time trr VR = 400V, ISD = 60A, di/dt = 3000A/µs, Includes Qoss — 29.5 — ns
Reverse Recovery Charge Qrr — 303 — nC
Peak Reverse Recovery Current Irrm — 17.4 — A
Continuous Diode Forward Current IS — — — 134 A
Pulsed Diode Forward Current ISM — — — 375 A
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