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SCMP80R390BF

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SiC MOSFETTO220F-3L
规格书下载

参数规格

车规 (Y/N)
N
封装
TO220F-3L
结构
N
结温 Tj
175 °C
漏源电压 VDS
800 V
漏极电流 ID
9 A
栅源电压 VGS 最大
-10/+22 V
阈值电压 VGS(th) 典型
3.4 V
导通电阻 RDS(ON)@18V,25°C 典型
390 mΩ
导通电阻 RDS(ON)@18V,25°C 最大
450 mΩ
导通电阻 RDS(ON)@18V,175°C 典型
520 mΩ
输入电容 Ciss 典型
208 pF
输出电容 Coss 典型
18 pF
反向传输电容 Crss 典型
1.8 pF
总栅极电荷 Qg 典型
10.6 nC
最小包装量
1000 pcs
最小订购量
5000 pcs

不确定怎么选？阅读《SiC MOSFET 选型指南》 →

在线规格书

以下内容整理自原厂规格书，实际参数以原厂正式文件为准。

SCMP80R390BF

800V N-Channel Silicon Carbide Power MOSFET

Product Summary
VDS RDS(ON)_TYP I_D_MAX
800 V 390 mΩ @VGS = 18V 9.0 A

TO220F-3L

PIN Configuration (Top View): G D S

Features
  • High blocking voltage with low On-Resistance
  • High speed switching with low capacitances
  • Easy to parallel and simple to drive
  • Avalanche ruggedness
  • Halogen free, RoHS compliant
Benefits
  • Higher system efficiency
  • Reduced cooling requirements
  • Increased power density
  • Increased system switching frequency
Applications
  • Solar inverters
  • Switch mode power supplies
  • High voltage DC/DC converters
  • Battery chargers
  • Motor drives
  • Pulsed power applications
Ordering Information
Orderable Part Number Package Type Device Marking Form Quantity (pcs)
SCMP80R390BF TO220F-3L P80R390B Tube 50
Maximum Ratings (@ TC = 25°C, unless otherwise specified.)
Parameter Symbol Test Condition Value Unit
Drain - Source Voltage VDSmax VGS = 0 V, ID = 100 µA 800 V
Gate - Source Voltage VGSmax Absolute maximum values -10/+22 V
Gate - Source Voltage VGSop Recommended operating values -5/+18 V
Continuous Drain Current (1) ID TC = 25°C 9.0 A
TC = 100°C 6.0 A
Pulsed Drain Current (2) IDM — 26 A
Total Power Dissipation PTOT TC = 25°C, TC = 175°C 52 W
Junction & Storage Temperature Range TJ, TSTG — -55 ~ +175 °C
Thermal Characteristics
Parameter Symbol Typ. Max. Unit
Thermal Resistance, Junction-to-Ambient R_θJA 40 — °C/W
Thermal Resistance, Junction-to-Case R_θJC 2.88 — °C/W

Electrical Characteristics (@ TJ = 25°C, unless otherwise specified.)

Off Characteristics
Parameter Symbol Test Condition Min. Typ. Max. Unit
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 1.0mA 800 — — V
Zero Gate Voltage Drain Current IDSS VDS = 800V, VGS = 0V — 2.0 100 µA
Gate-Source Leakage Current IGSS+ VGS = +22V, VDS = 0V — — 200 nA
Gate-Source Leakage Current IGSS- VGS = -10V, VDS = 0V — — 200 nA
On Characteristics
Parameter Symbol Test Condition Min. Typ. Max. Unit
Gate Threshold Voltage VGS(th) VGS = VDS, IDS = 1.0mA, TJ = 25°C 2.2 3.4 4.2 V
VGS = VDS, IDS = 1.0mA, TJ = 175°C — 2.6 — V
Static Drain-Source On-Resistance RDS(ON) VGS = 18V, ID = 5.0A, TJ = 25°C — 390 450 mΩ
VGS = 18V, ID = 5.0A, TJ = 175°C — 520 — mΩ
Diodes Forward Voltage VSD VGS = -5V, ISD = 2.5A, TJ = 25°C — 4.0 — V
VGS = -5V, ISD = 2.5A, TJ = 175°C — 3.6 — V
Dynamic Characteristics
Parameter Symbol Test Condition Min. Typ. Max. Unit
Input Capacitance Ciss — 208 — pF
Output Capacitance Coss VDS = 400V, VGS = 0V, f = 1MHz — 18 — pF
Reverse Transfer Capacitance Crss — 1.8 — pF
Internal Gate Resistance RG(int) f = 1MHz, ID = 0A — 59 — Ω
Switching Characteristics
Parameter Symbol Test Condition Min. Typ. Max. Unit
Turn-On Switching Energy Eon VDD = 400V, ID = 5.0A, RG = 10Ω, VGS = -5/18V — 25 — µJ
Turn-Off Switching Energy Eoff — 10 — µJ
Turn-On Delay Time td(on) — 5 — ns
Rise Time tr VDD = 400V, ID = 5.0A, RG = 10Ω, VGS = -5/18V — 17 — ns
Turn-Off Delay Time td(off) — 8 — ns
Fall Time tf — 10 — ns
Gate Charge Characteristics
Parameter Symbol Test Condition Min. Typ. Max. Unit
Total Gate Charge Qg — 10.6 — nC
Gate-Source Charge Qgs VDD = 400V, VGS = -5/18 V, ID = 5.0A — 5.1 — nC
Gate-Drain Charge Qgd — 2.2 — nC
Drain-Source Diode Characteristics
Parameter Symbol Test Condition Min. Typ. Max. Unit
Reverse Recovery Time trr VDD = 400V, VGS = -5V, ISD = 5.0 A, di/dt = 1000A/µs — 50 — ns
Reverse Recovery Charge Qrr — 38 — nC
Peak Reverse Recovery Current IRRM — 2.4 — A
Continuous Diode Forward Current (3) ISD TJ = 25°C — — 11 A
TJ = 175°C — — 6.0 A

Notes:

  1. Continuous Drain Current is limited by package.
  2. Pulse width is limited by Safe Operating Area (SOA).
  3. Continuous Diode Forward Current is limited by bonding wires.

Typical Electrical and Thermal Characteristics

（原 datasheet 含 17 曲线图，此处略）

  • Figure 1. Safe Operating Area
  • Figure 2. Maximum Transient Thermal Impedance
  • Figure 3. Typical Output Characteristics, TJ = 25°C
  • Figure 4. Typical Output Characteristics, TJ = 175°C
  • Figure 5. Typical Transfer Characteristics
  • Figure 6. Total Power Dissipation
  • Figure 7. Typical Gate Charge Characteristics
  • Figure 8. Typical Capacitance Characteristics
  • Figure 9. Typical Switching Energy vs. Supply Voltage
  • Figure 10. Typical Switching Energy vs. Drain Current
  • Figure 11. Typical Switching Energy vs. Gate Resistance
  • Figure 12. Typical Switching Energy vs. Temperature
  • Figure 13. Breakdown Voltage vs. Temperature
  • Figure 14. Gate Threshold vs. Temperature
  • Figure 15. On-Resistance vs. Temperature
  • Figure 16. Body Diode Characteristics, TJ = 25°C
  • Figure 17. Body Diode Characteristics, TJ = 175°C

TO220F-3L Package Outline

Package Notes:

  1. Dimensioning and tolerancing per ASME Y14.5M-1994.
  2. All dimensions in millimeter (angle in degree).
  3. Dimensions D and E1 do not include mold flash.
DIM. MIN. NOM. MAX.
A 4.50 4.70 4.90
A1 2.34 2.54 2.74
A2 2.50 2.76 2.96
b 0.60 0.80 1.00
b1 — — 1.47
b2 1.10 — 1.38
c 0.40 0.50 0.63
c1 0.70 REF
D 9.96 — 10.40
e 2.54 BSC
E 28.30 28.85 29.35
E1 15.67 15.87 16.10
G 3.20 — 3.40
L 12.68 — 13.30
L1 — — 3.50
L2 6.48 6.68 6.88
P 3.30 REF
θ 0° — 12°

单位：MILLIMETER

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