Product Detail

SCMP80R390BU

SineSemi 中晶新源Core Authorized Distributor

SiC MOSFETsTO252-3L

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Specifications

Automotive (Y/N): N
Package: TO252-3L
Configuration: N
Tj: 175 °C
VDS_Max: 800 V
ID_Max: 9 A
VGS_Max: -10/+22 V
VGS(th)_Typ: 3.4 V
RDS(ON)_Typ @VGS=18V,25°C: 390 mΩ
RDS(ON)_Max @VGS=18V,25°C: 450 mΩ
RDS(ON)_Typ @VGS=18V,175°C: 520 mΩ
Ciss_Typ: 208 pF
Coss_Typ: 18 pF
Crss_Typ: 1.8 pF
Qg_Typ: 10.6 nC
MPQ: 2500 pcs
MOQ: 25000 pcs

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Package & Schematic

SCMP80R390BU package outline, pin configuration and schematic — Package outline · Pin configuration · Schematic (from SineSemi official datasheet)

Online Datasheet

Compiled from the manufacturer's datasheet; the official document prevails.

SCMP80R390BU

800V N-Channel Silicon Carbide Power MOSFET

Product Summary

V_DS	R_DS(ON), typ	I_D, max
800 V	390 mΩ @ V_GS = 18V	9.0 A

TO252-3L

Maximum Ratings (@ T_C = 25°C, unless otherwise specified.)

Parameter	Symbol	Test Condition	Value	Unit
Drain - Source Voltage	V_DSmax	V_GS = 0V, I_D = 100µA	800	V
Gate - Source Voltage	V_GSmax	Absolute maximum values	-10/+22	V
Gate - Source Voltage	V_GSop	Recommended operating values	-5/+18	V
Continuous Drain Current ⁽¹⁾	I_D	T_C = 25°C	9.0	A
		T_C = 100°C	6.0	A
Pulsed Drain Current ⁽²⁾	I_DM	—	26	A
Total Power Dissipation	P_TOT	T_C = 25°C	52	W
Junction & Storage Temperature Range	T_J, T_STG	—	-55 ~ +175	°C

Thermal Characteristics

Parameter	Symbol	Typ	Max	Unit
Thermal Resistance, Junction-to-Ambient	R_θJA	40	—	°C/W
Thermal Resistance, Junction-to-Case	R_θJC	2.88	—	°C/W

Electrical Characteristics (@ T_J = 25°C, unless otherwise specified.)

Off Characteristics

Parameter	Symbol	Test Condition	Min	Typ	Max	Units
Drain-Source Breakdown Voltage	V_(BR)DSS	V_GS = 0V, I_D = 1.0mA	800	—	—	V
Zero Gate Voltage Drain Current	I_DSS	V_DS = 800V, V_GS = 0V	—	2	100	µA
Gate-Source Leakage Current	I_GSS+	V_GS = +22V, V_DS = 0V	—	—	200	nA
Gate-Source Leakage Current	I_GSS-	V_GS = -10V, V_DS = 0V	—	—	200	nA

On Characteristics

Parameter	Symbol	Test Condition	Min	Typ	Max	Units
Gate Threshold Voltage	V_GS(th)	V_GS = V_DS, I_DS = 1.0mA, T_J = 25°C	2.2	3.4	4.2	V
		V_GS = V_DS, I_DS = 1.0mA, T_J = 175°C	—	2.6	—	V
Static Drain-Source On-Resistance	R_DS(on)	V_GS = 18V, I_D = 5.0A, T_J = 25°C	—	390	450	mΩ
		V_GS = 18V, I_D = 5.0A, T_J = 175°C	—	520	—	mΩ
Diode Forward Voltage	V_SD	V_GS = -5V, I_SD = 2.5A, T_J = 25°C	—	4.0	—	V
		V_GS = -5V, I_SD = 2.5A, T_J = 175°C	—	3.6	—	V

Dynamic Characteristics

Parameter	Symbol	Test Condition	Min	Typ	Max	Units
Input Capacitance	C_iss	V_DS = 400V, V_GS = 0V, f = 1MHz	—	208	—	pF
Output Capacitance	C_oss		—	18	—	pF
Reverse Transfer Capacitance	C_rss		—	1.8	—	pF
Internal Gate Resistance	R_G(int)	f = 1MHz, I_D = 0A	—	59	—	Ω

Switching Characteristics

Parameter	Symbol	Test Condition	Min	Typ	Max	Units
Turn-On Switching Energy	E_on	V_DD = 400V, I_D = 5.0A, R_G = 10Ω, V_GS = -5/18V	—	25	—	µJ
Turn-Off Switching Energy	E_off		—	10	—	µJ
Turn-On Delay Time	t_d(on)	V_DD = 400V, I_D = 5.0A, R_G = 10Ω, V_GS = -5/18V	—	5	—	ns
Rise Time	t_r		—	17	—	ns
Turn-Off Delay Time	t_d(off)		—	8	—	ns
Fall Time	t_f		—	10	—	ns

Gate Charge Characteristics

Parameter	Symbol	Test Condition	Min	Typ	Max	Units
Total Gate Charge	Q_g	V_DD = 400V, V_GS = -5/18V, I_D = 5.0A	—	10.6	—	nC
Gate-Source Charge	Q_gs		—	5.1	—	nC
Gate-Drain Charge	Q_gd		—	2.2	—	nC

Drain-Source Diode Characteristics

Parameter	Symbol	Test Condition	Min	Typ	Max	Units
Reverse Recovery Time	t_rr	V_DD = 400V, V_GS = -5V, I_SD = 5.0A, di/dt = 1000A/µs	—	50	—	ns
Reverse Recovery Charge	Q_rr		—	38	—	nC
Peak Reverse Recovery Current	I_RRM		—	2.4	—	A
Continuous Diode Forward Current ⁽³⁾	I_SD	T_J = 25°C	—	—	11	A
		T_J = 175°C	—	—	6.0	A

Notes:

Continuous Drain Current is limited by package.
Pulse width is limited by Safe Operating Area (SOA).
Continuous Diode Forward Current is limited by bonding wires.