SCMP80R130BU product image

Product Detail

SCMP80R130BU

SineSemi 中晶新源Core Authorized Distributor

SiC MOSFETsTO252-3L
Download Datasheet

Specifications

Automotive (Y/N)
N
Package
TO252-3L
Configuration
N
Tj
175 °C
VDS_Max
800 V
ID_Max
25 A
VGS_Max
-10/+22 V
VGS(th)_Typ
3.2 V
RDS(ON)_Typ @VGS=18V,25°C
125 mΩ
RDS(ON)_Max @VGS=18V,25°C
150 mΩ
RDS(ON)_Typ @VGS=18V,175°C
180 mΩ
Ciss_Typ
706 pF
Coss_Typ
43 pF
Crss_Typ
3 pF
Qg_Typ
29 nC
MPQ
2500 pcs
MOQ
25000 pcs

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Package & Schematic

SCMP80R130BU package outline, pin configuration and schematic
Package outline · Pin configuration · Schematic (from SineSemi official datasheet)

Online Datasheet

Compiled from the manufacturer's datasheet; the official document prevails.

SCMP80R130BU

800V N-Channel Silicon Carbide Power MOSFET

Product Summary
VDS RDS(ON), typ ID, max
800 V 125 mΩ @ VGS = 18V 25 A

TO252-3L

Maximum Ratings (@ TC = 25°C, unless otherwise specified.)
Parameter Symbol Test Condition Value Unit
Drain - Source Voltage VDSmax VGS = 0V, ID = 100µA 800 V
Gate - Source Voltage VGSmax Absolute maximum values -10/+22 V
Gate - Source Voltage VGSop Recommended operating values -5/+18 V
Continuous Drain Current ID TC = 25°C 25 A
TC = 100°C 17 A
Junction & Storage Temperature Range TJ, TSTG — -55 ~ +175 °C
Thermal Characteristics
Parameter Symbol Typ Max Unit
Thermal Resistance, Junction-to-Ambient R_θJA 30 38 °C/W
Thermal Resistance, Junction-to-Case R_θJC 1.0 1.2 °C/W

Electrical Characteristics (@ TJ = 25°C, unless otherwise specified.)

Off Characteristics
Parameter Symbol Test Condition Min Typ Max Units
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 100µA 800 — — V
Zero Gate Voltage Drain Current IDSS VDS = 800V, VGS = 0V — 1.0 100 µA
Gate-Source Leakage Current IGSS VGS = +22V, VDS = 0V — — 100 nA
VGS = -10V, VDS = 0V — — 100 nA
On Characteristics
Parameter Symbol Test Condition Min Typ Max Units
Gate Threshold Voltage VGS(th) VGS = VDS, IDS = 2.5mA, TJ = 25°C 2.2 3.2 4.2 V
VGS = VDS, IDS = 2.5mA, TJ = 175°C — 2.3 — V
Static Drain-Source On-Resistance RDS(on) VGS = 18V, ID = 10A, TJ = 25°C — 125 150 mΩ
VGS = 18V, ID = 10A, TJ = 175°C — 180 — mΩ
VGS = 15V, ID = 10A, TJ = 25°C — 175 — mΩ
VGS = 15V, ID = 10A, TJ = 175°C — 195 — mΩ
VGS = 12V, ID = 10A, TJ = 25°C — 330 — mΩ
VGS = 12V, ID = 10A, TJ = 175°C — 240 — mΩ
Diode Forward Voltage VSD VGS = -5.0V, ISD = 5.0A, TJ = 25°C — 3.5 — V
VGS = -5.0V, ISD = 5.0A, TJ = 175°C — 3.2 — V
Dynamic Characteristics
Parameter Symbol Test Condition Min Typ Max Units
Input Capacitance Ciss VDS = 400V, VGS = 0V, f = 1MHz — 706 — pF
Output Capacitance Coss — 43 — pF
Reverse Transfer Capacitance Crss — 3.0 — pF
Internal Gate Resistance RG(int) f = 1MHz, ID = 0A — 13.0 — Ω
Switching Characteristics
Parameter Symbol Test Condition Min Typ Max Units
Turn-On Switching Loss Eon VDS = 400V, VGS = -5/+18V, ID = 10A, RG(ext) = 5.1Ω — 40 — µJ
Turn-Off Switching Loss Eoff — 18 — µJ
Turn-On Delay Time td(on) — 6.0 — ns
Rise Time tr — 14 — ns
Turn-Off Delay Time td(off) — 10 — ns
Fall Time tf — 6.0 — ns
Gate Charge Characteristics
Parameter Symbol Test Condition Min Typ Max Units
Total Gate Charge Qg VDS = 400V, VGS = -5/18V, ID = 10A — 29 — nC
Gate-Source Charge Qgs — 12 — nC
Gate-Drain Charge Qgd — 4.0 — nC
Drain-Source Diode Characteristics
Parameter Symbol Test Condition Min Typ Max Units
Reverse Recovery Time trr VR = 400V, VGS = -5.0V, ISD = 10A, di/dt = 1000A/µs — 30 — ns
Reverse Recovery Charge Qrr — 55 — nC
Peak Reverse Recovery Current IRRM — 3.6 — A
Continuous Diode Forward Current IS TC = 25°C — — 29 A
TC = 100°C — — 17 A
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