SMT4501BHPC product image

Product Detail

SMT4501BHPC

SineSemi 中晶新源Core Authorized Distributor

Wafer & Bare DieWafer

Specifications

Process Technology
SGT
Configuration
N
VDS_Max
45 V
RDS(ON)_Max @VGS=10V
1.15 mΩ
RDS(ON)_Typ @VGS=10V
0.95 mΩ
VGS(th)_Typ
3 V
With ESD
No
Die Size (μm×μm)
3350*2650
Gross Die (8" wafer)
3050
Wafer Thickness (μm)
90±10
VGS_Max
±20 V
Ciss_Typ
4446 pF
Coss_Typ
2385 pF
Crss_Typ
120 pF
Qg_Typ
62 nC
Qgs_Typ
20 nC
Qgd_Typ
12.3 nC
Tj
175 °C
Manufacturer Remarks
SGT With Plating