Product Detail
SMP2305AUAE
SineSemi 中晶新源Core Authorized Distributor
Specifications
- Process Technology
- Trench
- Configuration
- P
- VDS_Max
- -20 V
- VGS(th)_Typ
- -0.7 V
- With ESD
- No
- Die Size (μm×μm)
- 920*720
- Gross Die (8" wafer)
- 43516
- Wafer Thickness (μm)
- 150±15
- VGS_Max
- ±12 V
- RDS(ON)_Typ @VGS=4.5V
- 27 mΩ
- RDS(ON)_Max @VGS=4.5V
- 34 mΩ
- RDS(ON)_Typ @VGS=2.5V
- 35 mΩ
- RDS(ON)_Max @VGS=2.5V
- 45 mΩ
- Ciss_Typ
- 820 pF
- Coss_Typ
- 114 pF
- Crss_Typ
- 93 pF
- Qg_Typ
- 7.3 nC
- Qgs_Typ
- 1 nC
- Qgd_Typ
- 1.6 nC
- Tj
- 150 °C
- Manufacturer Remarks
- Trench P
Not sure how to choose? Read the MOSFET Wafer & Bare Die Selection Guide →
