Specifications
- Automotive (Y/N)
- N
- Package
- PDFN5060-8L
- Configuration
- N
- Tj
- 175 °C
- VDS_Max
- 650 V
- ID_Max
- 6.5 A
- VGS_Max
- -10/+22 V
- VGS(th)_Typ
- 3.2 V
- RDS(ON)_Typ @VGS=18V,25°C
- 390 mΩ
- RDS(ON)_Max @VGS=18V,25°C
- 470 mΩ
- RDS(ON)_Typ @VGS=18V,175°C
- 545 mΩ
- EAS_Max
- 64 mJ
- Ciss_Typ
- 137 pF
- Coss_Typ
- 12 pF
- Crss_Typ
- 2 pF
- Qg_Typ
- 8.1 nC
- MPQ
- 5000 pcs
- MOQ
- 50000 pcs
Online Datasheet
Compiled from the manufacturer's datasheet; the official document prevails.
SCMP65R390BP
650V N-Channel Silicon Carbide Power MOSFET
Product Summary
| V_DS |
R_DS(ON), typ |
I_D, max |
| 650 V |
390 mΩ @ V_GS = 18V |
6.5 A |
PDFN5060-8L
Maximum Ratings (@ T_C = 25°C, unless otherwise specified.)
| Parameter |
Symbol |
Value |
Unit |
| Drain - Source Voltage |
V_DS |
650 |
V |
| Gate - Source Voltage (Absolute maximum) |
V_GSmax |
-10/+22 |
V |
| Gate - Source Voltage (Recommended operating) |
V_GSop |
-5/+18 |
V |
| Continuous Drain Current (V_GS = 18V) ^(1) (T_C = 25°C) |
I_D |
6.5 |
A |
| Continuous Drain Current (V_GS = 18V) ^(1) (T_C = 100°C) |
I_D |
4.6 |
A |
| Pulsed Drain Current ^(2) |
I_DM |
26 |
A |
| Single Pulse Avalanche Energy ^(3) |
E_AS |
64 |
mJ |
| Power Dissipation (T_C = 25°C) |
P_D |
48 |
W |
| Power Dissipation (T_C = 100°C) |
P_D |
24 |
W |
| Junction & Storage Temperature Range |
T_J, T_STG |
-55 ~ +175 |
°C |
Thermal Characteristics
| Parameter |
Symbol |
Typ |
Max |
Unit |
| Thermal Resistance, Junction-to-Ambient ^(4) |
R_θJA |
40 |
50 |
°C/W |
| Thermal Resistance, Junction-to-Case ^(5) |
R_θJC |
2.9 |
3.2 |
°C/W |
Electrical Characteristics (@ T_J = 25°C, unless otherwise specified.)
Off Characteristics ^(6)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Units |
| Drain-Source Breakdown Voltage |
V_(BR)DSS |
V_GS = 0V, I_D = 1.0mA |
650 |
— |
— |
V |
| Zero Gate Voltage Drain Current |
I_DSS |
V_DS = 650V, V_GS = 0V |
— |
2.0 |
100 |
µA |
| Gate-Source Leakage Current |
I_GSS |
V_GS = +22V, V_DS = 0V |
— |
— |
200 |
nA |
|
|
V_GS = -10V, V_DS = 0V |
— |
— |
-200 |
nA |
On Characteristics ^(6)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Units |
| Gate Threshold Voltage |
V_GS(th) |
V_GS = V_DS, I_D = 1.0mA, T_J = 25°C |
2.1 |
3.2 |
4.2 |
V |
|
|
V_GS = V_DS, I_D = 1.0mA, T_J = 175°C |
— |
2.4 |
— |
V |
| Static Drain-Source On-Resistance |
R_DS(on) |
V_GS = 18V, I_D = 2.5A, T_J = 25°C |
— |
390 |
470 |
mΩ |
|
|
V_GS = 18V, I_D = 2.5A, T_J = 175°C |
— |
545 |
— |
mΩ |
|
|
V_GS = 15V, I_D = 2.5A, T_J = 25°C |
— |
510 |
— |
mΩ |
|
|
V_GS = 15V, I_D = 2.5A, T_J = 175°C |
— |
590 |
— |
mΩ |
| Diode Forward Voltage |
V_SD |
V_GS = -5.0V, I_SD = 2.5A, T_J = 25°C |
— |
6.0 |
— |
V |
|
|
V_GS = -5.0V, I_SD = 2.5A, T_J = 175°C |
— |
5.4 |
— |
V |
Dynamic Characteristics ^(7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Units |
| Input Capacitance |
C_iss |
V_DS = 400V, V_GS = 0V, f = 1MHz |
— |
137 |
— |
pF |
| Output Capacitance |
C_oss |
|
— |
12 |
— |
pF |
| Reverse Transfer Capacitance |
C_rss |
|
— |
2.0 |
— |
pF |
| Gate Resistance |
R_g |
V_GS = 0V, V_DS = 0V, f = 1MHz |
— |
62 |
— |
Ω |
Switching Characteristics ^(7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Units |
| Turn-On Switching Loss |
E_on |
V_DS = 400V, I_D = 2.5A, R_G = 10Ω, V_GS = -5/18V |
— |
11 |
— |
µJ |
| Turn-Off Switching Loss |
E_off |
|
— |
1.5 |
— |
µJ |
| Total Switching Loss |
E_tot |
|
— |
12 |
— |
µJ |
| Turn-On Delay Time |
t_d(on) |
V_DS = 400V, I_D = 2.5A, R_G = 10Ω, V_GS = -5/18V |
— |
7.8 |
— |
ns |
| Rise Time |
t_r |
|
— |
14 |
— |
ns |
| Turn-Off Delay Time |
t_d(off) |
|
— |
12 |
— |
ns |
| Fall Time |
t_f |
|
— |
20 |
— |
ns |
Gate Charge Characteristics ^(7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Units |
| Total Gate Charge (V_GS = 18V) |
Q_g |
V_DS = 400V, I_D = 2.5A, V_GS = -5/18V |
— |
8.1 |
— |
nC |
| Gate-Source Charge |
Q_gs |
|
— |
1.5 |
— |
nC |
| Gate-Drain Charge |
Q_gd |
|
— |
1.9 |
— |
nC |
Drain-Source Diode Characteristics ^(7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Units |
| Body Diode Reverse Recovery Time |
t_rr |
V_DS = 400V, V_GS = -5.0V, I_SD = 2.5A, di/dt = 1000A/µs |
— |
5.7 |
— |
ns |
| Body Diode Reverse Recovery Charge |
Q_rr |
|
— |
15 |
— |
nC |
| Peak Reverse Recovery Current |
I_rrm |
|
— |
4.5 |
— |
A |
| Diode Forward Current |
I_S |
T_C = 25°C |
— |
— |
6.5 |
A |
Notes:
- This current is chip limited, which is calculated based on Rthjc.
- This current is calculated on single pulse with 10µs Single Pulse.
- Defined by design, not subject to production test, E_AS condition: T_J = 25°C, V_DD = 325V, V_GS = 10V, L = 10mH.
- Device mounted on FR-4 substrate PC board with 2oz copper in 1inch square cooling area.
- Thermal resistance from junction to the exposed pad.
- Short duration pulse test used to minimize self-heating effect.
- Defined by design, not subject to production.
