Specifications
- Automotive (Y/N)
- N
- Package
- PDFN5060-8L
- Configuration
- N
- Tj
- 175 °C
- VDS_Max
- 650 V
- ID_Max
- 10 A
- VGS_Max
- -10/+22 V
- VGS(th)_Typ
- 3.2 V
- RDS(ON)_Typ @VGS=18V,25°C
- 190 mΩ
- RDS(ON)_Max @VGS=18V,25°C
- 240 mΩ
- RDS(ON)_Typ @VGS=18V,175°C
- 265 mΩ
- EAS_Max
- 164 mJ
- Ciss_Typ
- 261 pF
- Coss_Typ
- 22 pF
- Crss_Typ
- 3 pF
- Qg_Typ
- 13.5 nC
- MPQ
- 5000 pcs
- MOQ
- 50000 pcs
Not sure how to choose? Read the SiC MOSFETs Selection Guide →
Package & Schematic
Package outline · Pin configuration · Schematic (from SineSemi official datasheet)Online Datasheet
Compiled from the manufacturer's datasheet; the official document prevails.
SCMP65R190BP
650V N-Channel Silicon Carbide Power MOSFET
Product Summary
| VDS |
RDS(ON), typ |
ID, max |
| 650 V |
190 mΩ @ VGS = 18V |
10.0 A |
PDFN5060-8L
Maximum Ratings (@ TC = 25°C, unless otherwise specified.)
| Parameter |
Symbol |
Value |
Unit |
| Drain - Source Voltage |
VDS |
650 |
V |
| Gate - Source Voltage (Absolute maximum) |
VGSmax |
-10/+22 |
V |
| Gate - Source Voltage (Recommended operating) |
VGSop |
-5/+18 |
V |
| Continuous Drain Current (VGS = 18V) (1) (TC = 25°C) |
ID |
10.0 |
A |
| Continuous Drain Current (VGS = 18V) (1) (TC = 100°C) |
ID |
7.1 |
A |
| Pulsed Drain Current (2) |
IDM |
40 |
A |
| Single Pulse Avalanche Energy (3) |
EAS |
164 |
mJ |
| Power Dissipation (TC = 25°C) |
PD |
54 |
W |
| Power Dissipation (TC = 100°C) |
PD |
27 |
W |
| Junction & Storage Temperature Range |
TJ, TSTG |
-55 ~ +175 |
°C |
Thermal Characteristics
| Parameter |
Symbol |
Typ |
Max |
Unit |
| Thermal Resistance, Junction-to-Ambient (4) |
R_θJA |
40 |
50 |
°C/W |
| Thermal Resistance, Junction-to-Case (5) |
R_θJC |
2.4 |
2.8 |
°C/W |
Electrical Characteristics (@ TJ = 25°C, unless otherwise specified.)
Off Characteristics (6)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Units |
| Drain-Source Breakdown Voltage |
V(BR)DSS |
VGS = 0V, ID = 1.0mA |
650 |
— |
— |
V |
| Zero Gate Voltage Drain Current |
IDSS |
VDS = 650V, VGS = 0V |
— |
— |
100 |
µA |
| Gate-Source Leakage Current |
IGSS |
VGS = +22V, VDS = 0V |
— |
— |
200 |
nA |
|
|
VGS = -10V, VDS = 0V |
— |
— |
-200 |
nA |
On Characteristics (6)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Units |
| Gate Threshold Voltage |
VGS(th) |
VGS = VDS, ID = 1.0mA, TJ = 25°C |
2.1 |
3.2 |
4.2 |
V |
|
|
VGS = VDS, ID = 1.0mA, TJ = 175°C |
— |
2.3 |
— |
V |
| Static Drain-Source On-Resistance |
RDS(on) |
VGS = 18V, ID = 5.0A, TJ = 25°C |
— |
190 |
240 |
mΩ |
|
|
VGS = 18V, ID = 5.0A, TJ = 175°C |
— |
265 |
— |
mΩ |
|
|
VGS = 15V, ID = 5.0A, TJ = 25°C |
— |
250 |
— |
mΩ |
|
|
VGS = 15V, ID = 5.0A, TJ = 175°C |
— |
290 |
— |
mΩ |
| Diode Forward Voltage |
VSD |
VGS = -5.0V, ISD = 5.0A, TJ = 25°C |
— |
5.0 |
— |
V |
|
|
VGS = -5.0V, ISD = 5.0A, TJ = 175°C |
— |
4.4 |
— |
V |
Dynamic Characteristics (7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Units |
| Input Capacitance |
Ciss |
VDS = 400V, VGS = 0V, f = 1MHz |
— |
261 |
— |
pF |
| Output Capacitance |
Coss |
|
— |
22 |
— |
pF |
| Reverse Transfer Capacitance |
Crss |
|
— |
3.0 |
— |
pF |
| Gate Resistance |
Rg |
VGS = 0V, VDS = 0V, f = 1MHz |
— |
32 |
— |
Ω |
Switching Characteristics (7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Units |
| Turn-On Switching Loss |
Eon |
VDS = 400V, ID = 5.0A, RG = 10Ω, VGS = -5/18V |
— |
20 |
— |
µJ |
| Turn-Off Switching Loss |
Eoff |
|
— |
7.8 |
— |
µJ |
| Total Switching Loss |
Etot |
|
— |
28 |
— |
µJ |
| Turn-On Delay Time |
td(on) |
VDS = 400V, ID = 5.0A, RG = 10Ω, VGS = -5/18V |
— |
8.2 |
— |
ns |
| Rise Time |
tr |
|
— |
17 |
— |
ns |
| Turn-Off Delay Time |
td(off) |
|
— |
18 |
— |
ns |
| Fall Time |
tf |
|
— |
12 |
— |
ns |
Gate Charge Characteristics (7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Units |
| Total Gate Charge (VGS = 18V) |
Qg |
VDS = 400V, ID = 5.0A, VGS = -5/18V |
— |
13.5 |
— |
nC |
| Gate-Source Charge |
Qgs |
|
— |
3.2 |
— |
nC |
| Gate-Drain Charge |
Qgd |
|
— |
5.3 |
— |
nC |
Drain-Source Diode Characteristics (7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Units |
| Body Diode Reverse Recovery Time |
trr |
VDS = 400V, VGS = -5.0V, ISD = 5.0A, di/dt = 1000A/µs |
— |
8.3 |
— |
ns |
| Body Diode Reverse Recovery Charge |
Qrr |
|
— |
21 |
— |
nC |
| Peak Reverse Recovery Current |
Irrm |
|
— |
4.3 |
— |
A |
| Diode Forward Current |
IS |
TC = 25°C |
— |
— |
10 |
A |
Notes:
- This current is chip limited, which is calculated based on Rthjc.
- This current is calculated on single pulse with 10µs Single Pulse.
- Defined by design, not subject to production test, EAS condition: TJ = 25°C, VDD = 325V, VGS = 10V, L = 10mH.
- Device mounted on FR-4 substrate PC board with 2oz copper in 1inch square cooling area.
- Thermal resistance from junction to the exposed pad.
- Short duration pulse test used to minimize self-heating effect.
- Defined by design, not subject to production.
