产品详情
SCMP65R390BP
中晶新源 SineSemi核心代理商
SiC MOSFETPDFN5060-8L
参数规格
- 车规 (Y/N)
- N
- 封装
- PDFN5060-8L
- 结构
- N
- 结温 Tj
- 175 °C
- 漏源电压 VDS
- 650 V
- 漏极电流 ID
- 6.5 A
- 栅源电压 VGS 最大
- -10/+22 V
- 阈值电压 VGS(th) 典型
- 3.2 V
- 导通电阻 RDS(ON)@18V,25°C 典型
- 390 mΩ
- 导通电阻 RDS(ON)@18V,25°C 最大
- 470 mΩ
- 导通电阻 RDS(ON)@18V,175°C 典型
- 545 mΩ
- 雪崩能量 EAS 最大
- 64 mJ
- 输入电容 Ciss 典型
- 137 pF
- 输出电容 Coss 典型
- 12 pF
- 反向传输电容 Crss 典型
- 2 pF
- 总栅极电荷 Qg 典型
- 8.1 nC
- 最小包装量
- 5000 pcs
- 最小订购量
- 50000 pcs
不确定怎么选？阅读《SiC MOSFET 选型指南》 →
在线规格书
以下内容整理自原厂规格书，实际参数以原厂正式文件为准。
SCMP65R390BP
650V N-Channel Silicon Carbide Power MOSFET
Product Summary
| VDS |
RDS(ON), typ |
ID, max |
| 650 V |
390 mΩ @ VGS = 18V |
6.5 A |
PDFN5060-8L
Maximum Ratings (@ TC = 25°C, unless otherwise specified.)
| Parameter |
Symbol |
Value |
Unit |
| Drain - Source Voltage |
VDS |
650 |
V |
| Gate - Source Voltage (Absolute maximum) |
VGSmax |
-10/+22 |
V |
| Gate - Source Voltage (Recommended operating) |
VGSop |
-5/+18 |
V |
| Continuous Drain Current (VGS = 18V) (1) (TC = 25°C) |
ID |
6.5 |
A |
| Continuous Drain Current (VGS = 18V) (1) (TC = 100°C) |
ID |
4.6 |
A |
| Pulsed Drain Current (2) |
IDM |
26 |
A |
| Single Pulse Avalanche Energy (3) |
EAS |
64 |
mJ |
| Power Dissipation (TC = 25°C) |
PD |
48 |
W |
| Power Dissipation (TC = 100°C) |
PD |
24 |
W |
| Junction & Storage Temperature Range |
TJ, TSTG |
-55 ~ +175 |
°C |
Thermal Characteristics
| Parameter |
Symbol |
Typ |
Max |
Unit |
| Thermal Resistance, Junction-to-Ambient (4) |
R_θJA |
40 |
50 |
°C/W |
| Thermal Resistance, Junction-to-Case (5) |
R_θJC |
2.9 |
3.2 |
°C/W |
Electrical Characteristics (@ TJ = 25°C, unless otherwise specified.)
Off Characteristics (6)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Units |
| Drain-Source Breakdown Voltage |
V(BR)DSS |
VGS = 0V, ID = 1.0mA |
650 |
— |
— |
V |
| Zero Gate Voltage Drain Current |
IDSS |
VDS = 650V, VGS = 0V |
— |
2.0 |
100 |
µA |
| Gate-Source Leakage Current |
IGSS |
VGS = +22V, VDS = 0V |
— |
— |
200 |
nA |
|
|
VGS = -10V, VDS = 0V |
— |
— |
-200 |
nA |
On Characteristics (6)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Units |
| Gate Threshold Voltage |
VGS(th) |
VGS = VDS, ID = 1.0mA, TJ = 25°C |
2.1 |
3.2 |
4.2 |
V |
|
|
VGS = VDS, ID = 1.0mA, TJ = 175°C |
— |
2.4 |
— |
V |
| Static Drain-Source On-Resistance |
RDS(on) |
VGS = 18V, ID = 2.5A, TJ = 25°C |
— |
390 |
470 |
mΩ |
|
|
VGS = 18V, ID = 2.5A, TJ = 175°C |
— |
545 |
— |
mΩ |
|
|
VGS = 15V, ID = 2.5A, TJ = 25°C |
— |
510 |
— |
mΩ |
|
|
VGS = 15V, ID = 2.5A, TJ = 175°C |
— |
590 |
— |
mΩ |
| Diode Forward Voltage |
VSD |
VGS = -5.0V, ISD = 2.5A, TJ = 25°C |
— |
6.0 |
— |
V |
|
|
VGS = -5.0V, ISD = 2.5A, TJ = 175°C |
— |
5.4 |
— |
V |
Dynamic Characteristics (7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Units |
| Input Capacitance |
Ciss |
VDS = 400V, VGS = 0V, f = 1MHz |
— |
137 |
— |
pF |
| Output Capacitance |
Coss |
|
— |
12 |
— |
pF |
| Reverse Transfer Capacitance |
Crss |
|
— |
2.0 |
— |
pF |
| Gate Resistance |
Rg |
VGS = 0V, VDS = 0V, f = 1MHz |
— |
62 |
— |
Ω |
Switching Characteristics (7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Units |
| Turn-On Switching Loss |
Eon |
VDS = 400V, ID = 2.5A, RG = 10Ω, VGS = -5/18V |
— |
11 |
— |
µJ |
| Turn-Off Switching Loss |
Eoff |
|
— |
1.5 |
— |
µJ |
| Total Switching Loss |
Etot |
|
— |
12 |
— |
µJ |
| Turn-On Delay Time |
td(on) |
VDS = 400V, ID = 2.5A, RG = 10Ω, VGS = -5/18V |
— |
7.8 |
— |
ns |
| Rise Time |
tr |
|
— |
14 |
— |
ns |
| Turn-Off Delay Time |
td(off) |
|
— |
12 |
— |
ns |
| Fall Time |
tf |
|
— |
20 |
— |
ns |
Gate Charge Characteristics (7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Units |
| Total Gate Charge (VGS = 18V) |
Qg |
VDS = 400V, ID = 2.5A, VGS = -5/18V |
— |
8.1 |
— |
nC |
| Gate-Source Charge |
Qgs |
|
— |
1.5 |
— |
nC |
| Gate-Drain Charge |
Qgd |
|
— |
1.9 |
— |
nC |
Drain-Source Diode Characteristics (7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Units |
| Body Diode Reverse Recovery Time |
trr |
VDS = 400V, VGS = -5.0V, ISD = 2.5A, di/dt = 1000A/µs |
— |
5.7 |
— |
ns |
| Body Diode Reverse Recovery Charge |
Qrr |
|
— |
15 |
— |
nC |
| Peak Reverse Recovery Current |
Irrm |
|
— |
4.5 |
— |
A |
| Diode Forward Current |
IS |
TC = 25°C |
— |
— |
6.5 |
A |
Notes:
- This current is chip limited, which is calculated based on Rthjc.
- This current is calculated on single pulse with 10µs Single Pulse.
- Defined by design, not subject to production test, EAS condition: TJ = 25°C, VDD = 325V, VGS = 10V, L = 10mH.
- Device mounted on FR-4 substrate PC board with 2oz copper in 1inch square cooling area.
- Thermal resistance from junction to the exposed pad.
- Short duration pulse test used to minimize self-heating effect.
- Defined by design, not subject to production.
