SMT4002DLAD product image

Product Detail

SMT4002DLAD

SineSemi 中晶新源Core Authorized Distributor

Wafer & Bare DieWafer

Specifications

Process Technology
SGT
Configuration
N
VDS_Max
40 V
RDS(ON)_Max @VGS=10V
2.4 mΩ
RDS(ON)_Typ @VGS=10V
2 mΩ
VGS(th)_Typ
1.7 V
With ESD
No
Die Size (μm×μm)
2550*1700
Gross Die (8" wafer)
6308
Wafer Thickness (μm)
105±10
VGS_Max
±20 V
RDS(ON)_Typ @VGS=4.5V
2.9 mΩ
RDS(ON)_Max @VGS=4.5V
3.6 mΩ
Ciss_Typ
2126 pF
Coss_Typ
1198 pF
Crss_Typ
46 pF
Qg_Typ
30 nC
Qgs_Typ
5.4 nC
Qgd_Typ
4.2 nC
Tj
175 °C
Manufacturer Remarks
SGT N