SMT4001GLAD product image

Product Detail

SMT4001GLAD

SineSemi 中晶新源Core Authorized Distributor

Wafer & Bare DieWafer

Specifications

Process Technology
SGT
Configuration
N
VDS_Max
40 V
RDS(ON)_Max @VGS=10V
1.8 mΩ
RDS(ON)_Typ @VGS=10V
1.5 mΩ
VGS(th)_Typ
1.7 V
With ESD
No
Die Size (μm×μm)
3300*1850
Gross Die (8" wafer)
4474
Wafer Thickness (μm)
105±10
VGS_Max
±20 V
RDS(ON)_Typ @VGS=4.5V
2.1 mΩ
RDS(ON)_Max @VGS=4.5V
2.7 mΩ
Ciss_Typ
2862 pF
Coss_Typ
1660 pF
Crss_Typ
82 pF
Qg_Typ
44 nC
Qgs_Typ
7.8 nC
Qgd_Typ
7.8 nC
Tj
175 °C
Manufacturer Remarks
SGT N