SMT4001GHAD product image

Product Detail

SMT4001GHAD

SineSemi 中晶新源Core Authorized Distributor

Wafer & Bare DieWafer

Specifications

Process Technology
SGT
Configuration
N
VDS_Max
40 V
RDS(ON)_Max @VGS=10V
1.8 mΩ
RDS(ON)_Typ @VGS=10V
1.5 mΩ
VGS(th)_Typ
3 V
With ESD
No
Die Size (μm×μm)
3300*1850
Gross Die (8" wafer)
4474
Wafer Thickness (μm)
105±10
VGS_Max
±20 V
Ciss_Typ
2890 pF
Coss_Typ
1682 pF
Crss_Typ
77 pF
Qg_Typ
39 nC
Qgs_Typ
11.8 nC
Qgd_Typ
7.8 nC
Tj
175 °C
Manufacturer Remarks
SGT N