Product Detail
SMT4001GHAD
SineSemi 中晶新源Core Authorized Distributor
Specifications
- Process Technology
- SGT
- Configuration
- N
- VDS_Max
- 40 V
- RDS(ON)_Max @VGS=10V
- 1.8 mΩ
- RDS(ON)_Typ @VGS=10V
- 1.5 mΩ
- VGS(th)_Typ
- 3 V
- With ESD
- No
- Die Size (μm×μm)
- 3300*1850
- Gross Die (8" wafer)
- 4474
- Wafer Thickness (μm)
- 105±10
- VGS_Max
- ±20 V
- Ciss_Typ
- 2890 pF
- Coss_Typ
- 1682 pF
- Crss_Typ
- 77 pF
- Qg_Typ
- 39 nC
- Qgs_Typ
- 11.8 nC
- Qgd_Typ
- 7.8 nC
- Tj
- 175 °C
- Manufacturer Remarks
- SGT N
Not sure how to choose? Read the MOSFET Wafer & Bare Die Selection Guide →
