SMT3003DLAD product image

Product Detail

SMT3003DLAD

SineSemi 中晶新源Core Authorized Distributor

Wafer & Bare DieWafer

Specifications

Process Technology
SGT
Configuration
N
VDS_Max
30 V
RDS(ON)_Max @VGS=10V
3.9 mΩ
RDS(ON)_Typ @VGS=10V
3.2 mΩ
VGS(th)_Typ
1.7 V
With ESD
No
Die Size (μm×μm)
1600*1040
Gross Die (8" wafer)
16754
Wafer Thickness (μm)
105±10
VGS_Max
±20 V
RDS(ON)_Typ @VGS=4.5V
4.2 mΩ
RDS(ON)_Max @VGS=4.5V
5.5 mΩ
Ciss_Typ
1144 pF
Coss_Typ
608 pF
Crss_Typ
54 pF
Qg_Typ
17.9 nC
Qgs_Typ
2.8 nC
Qgd_Typ
2.4 nC
Tj
150 °C
Manufacturer Remarks
SGT N