SMT3003CLPB product image

Product Detail

SMT3003CLPB

SineSemi 中晶新源Core Authorized Distributor

Wafer & Bare DieWafer

Specifications

Process Technology
SGT
Configuration
N
VDS_Max
30 V
RDS(ON)_Max @VGS=10V
3 mΩ
RDS(ON)_Typ @VGS=10V
2.5 mΩ
VGS(th)_Typ
1.7 V
With ESD
No
Die Size (μm×μm)
1600*1040
Gross Die (8" wafer)
16754
Wafer Thickness (μm)
75±10
VGS_Max
±20 V
RDS(ON)_Typ @VGS=4.5V
3.4 mΩ
RDS(ON)_Max @VGS=4.5V
4.4 mΩ
Ciss_Typ
1145 pF
Coss_Typ
585 pF
Crss_Typ
52 pF
Qg_Typ
17.7 nC
Qgs_Typ
3.1 nC
Qgd_Typ
2.6 nC
Tj
150 °C
Manufacturer Remarks
SGT With Plating