Product Detail
SMT15T38AHAF
SineSemi 中晶新源Core Authorized Distributor
Specifications
- Process Technology
- SGT
- Configuration
- N
- VDS_Max
- 150 V
- RDS(ON)_Max @VGS=10V
- 38 mΩ
- RDS(ON)_Typ @VGS=10V
- 31 mΩ
- VGS(th)_Typ
- 3.4 V
- With ESD
- No
- Die Size (μm×μm)
- 2460*1810
- Gross Die (8" wafer)
- 6298
- Wafer Thickness (μm)
- 200±20
- VGS_Max
- ±20 V
- Ciss_Typ
- 745 pF
- Coss_Typ
- 101 pF
- Crss_Typ
- 11 pF
- Qg_Typ
- 11.6 nC
- Qgs_Typ
- 4.3 nC
- Qgd_Typ
- 3.3 nC
- Tj
- 175 °C
- Manufacturer Remarks
- SGT N
Not sure how to choose? Read the MOSFET Wafer & Bare Die Selection Guide →
Online Datasheet
Compiled from the manufacturer's datasheet; the official document prevails.
SMT15T38AHAF
150V N-Channel Power MOSFET (Wafer Datasheet)
Product Summary
- VDS = 150V
- RDS(ON), max = 30mΩ (VGS = 10V)
Chip Information
| Parameter | Value |
|---|---|
| Die Size (with scribe line) | 2460µm × 1810µm |
| Gate Pad Size | 280µm × 400µm |
| Source Pad Size | Full Metalized Source |
| Scribe Line Width | 80µm |
| Wafer Thickness | 200µm ± 25µm |
| Wafer Diameter | 8 inch |
| Passivation | Yes |
| Front Metal Composition & Thickness | AlCu, 4µm |
| Back Metal Composition & Thickness | Ti/Ni/Ag, 1.5µm |
| Gross Die (approximately) | 6,332 |
Ordering Information
| Orderable Part Number | Wafer Description |
|---|---|
| SMT15T38AHAF | Sampling Tested Wafer |
| SMT15T38AHAF-C | Full CP Tested Wafer |
Maximum Ratings (@ TJ = 25°C, unless otherwise specified.)
| Parameter | Symbol | Value | Units |
|---|---|---|---|
| Drain - Source Voltage | VDS | 150 | V |
| Gate - Source Voltage | VGS | ±20 | V |
| Junction Temperature Range | TJ | -55 ~ +150 | °C |
Electrical Characteristics (@ TJ = 25°C, unless otherwise specified.)
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = 250µA | 150 | — | — | V |
| Zero Gate Voltage Drain Current | IDSS | VDS = 150V, VGS = 0V | — | — | 1.0 | µA |
| Gate-Body Leakage Current | IGSS | VGS = ±20V, VDS = 0V | — | — | ±100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250µA | 2.5 | 3.4 | 4.5 | V |
| Static Drain-Source On-Resistance (1) | RDS(ON) | VGS = 10V, ID = 20A | — | 30 | 38 | mΩ |
| Diodes Forward Voltage | VSD | IS = 2.0A, VGS = 0V | — | 0.7 | 1.2 | V |
Notes:
- RDS(ON) value is referred by the device assembled in PDFN5060-8L.