Specifications
- Process Technology
- SGT
- Configuration
- N
- VDS_Max
- 100 V
- RDS(ON)_Max @VGS=10V
- 5.5 mΩ
- RDS(ON)_Typ @VGS=10V
- 4.6 mΩ
- VGS(th)_Typ
- 1.8 V
- With ESD
- No
- Die Size (μm×μm)
- 3300*2350
- Gross Die (8" wafer)
- 3601
- Wafer Thickness (μm)
- 150±15
- VGS_Max
- ±20 V
- RDS(ON)_Typ @VGS=4.5V
- 5.7 mΩ
- RDS(ON)_Max @VGS=4.5V
- 7.1 mΩ
- Ciss_Typ
- 2022 pF
- Coss_Typ
- 972 pF
- Crss_Typ
- 23 pF
- Qg_Typ
- 38 nC
- Qgs_Typ
- 5.2 nC
- Qgd_Typ
- 8.1 nC
- Tj
- 175 °C
- Manufacturer Remarks
- SGT N
Not sure how to choose? Read the MOSFET Wafer & Bare Die Selection Guide →
Online Datasheet
Compiled from the manufacturer's datasheet; the official document prevails.
SMT10T06ALAE (Rev1.4)
100V N-Channel Power MOSFET (Wafer Datasheet)
Product Summary
- VDS = 100V
- RDS(ON), max = 4.8mΩ (VGS = 10V)
- RDS(ON), max = 5.7mΩ (VGS = 4.5V)
Potential Applications
- Power Management
- Motor Driving and BMS in Power Tools, E-vehicle
- High frequency switching synchronous rectification
Chip Information
| Parameter |
Value |
| Die Size (with scribe line) |
3300µm × 2350µm |
| Gate Pad Size |
280µm × 432µm |
| Source Pad Size |
Full Metalized Source |
| Scribe Line Width |
80µm |
| Wafer Thickness |
150 ± 15µm |
| Wafer Diameter |
8 inch |
| Passivation |
Yes |
| Front Metal Composition & Thickness |
AlCu, 4.0µm |
| Back Metal Composition & Thickness |
Ti/Ni/Ag, 1.5µm |
| Gross Die (approximately) |
3,601 |
Ordering Information
| Orderable Part Number |
Wafer Description |
| SMT10T06ALAE |
Sampling Tested Wafer |
| SMT10T06ALAE-C |
Full CP Tested Wafer |
Maximum Ratings (@ TJ = 25°C, unless otherwise specified.)
| Parameter |
Symbol |
Value |
Units |
| Drain - Source Voltage |
VDS |
100 |
V |
| Gate - Source Voltage |
VGS |
±20 |
V |
| Junction Temperature Range |
TJ |
-55 ~ +175 |
°C |
Electrical Characteristics (@ TJ = 25°C, unless otherwise specified.)
| Parameter |
Symbol |
Test Conditions |
Min |
Typ |
Max |
Units |
| Drain-Source Breakdown Voltage |
V(BR)DSS |
VGS = 0V, ID = 250µA |
100 |
— |
— |
V |
| Zero Gate Voltage Drain Current |
IDSS |
VDS = 80V, VGS = 0V |
— |
— |
1.0 |
µA |
| Gate-Body Leakage Current |
IGSS |
VGS = ±20V, VDS = 0V |
— |
— |
±100 |
nA |
| Gate Threshold Voltage |
VGS(th) |
VDS = VGS, ID = 250µA |
1.2 |
1.7 |
2.5 |
V |
| Static Drain-Source On-Resistance (1) |
RDS(ON) |
VGS = 10V, ID = 20A |
— |
4.6 |
5.5 |
mΩ |
|
|
VGS = 4.5V, ID = 15A |
— |
5.7 |
7.1 |
mΩ |
| Diodes Forward Voltage |
VSD |
IS = 2.0A, VGS = 0V |
— |
0.7 |
1.2 |
V |
Dynamic Characteristics
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Units |
| Input Capacitance |
Ciss |
VDS = 30V, VGS = 0V, f = 1MHz |
— |
2022 |
— |
pF |
| Output Capacitance |
Coss |
|
— |
912 |
— |
pF |
| Reverse Transfer Capacitance |
Crss |
|
— |
23 |
— |
pF |
| Gate Resistance |
Rg |
VGS = 0V, VDS = 0V, f = 1MHz |
— |
1.0 |
— |
Ω |
Gate Charge Characteristics
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Units |
| Total Gate Charge |
Qg |
VDS = 30V, ID = 20A |
— |
30 |
— |
nC |
| Gate-Source Charge |
Qgs |
VGS = 10V |
— |
5.2 |
— |
nC |
| Gate-Drain Charge |
Qgd |
|
— |
9.1 |
— |
nC |
| Gate Plateau Voltage |
Vplateau |
|
— |
2.7 |
— |
V |
Drain-Source Diode Characteristics
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Units |
| Body Diode Reverse Recovery Time |
trr |
IS = 20A, di/dt = 100A/µs |
— |
55 |
— |
ns |
| Body Diode Reverse Recovery Charge |
Qrr |
TJ = 25°C |
— |
102 |
— |
nC |
Notes:
- RDS(ON) value is referred by the device assembled in PDFN5060-8L.
