Product Detail
SMT10T04BHAES
SineSemi 中晶新源Core Authorized Distributor
Specifications
- Process Technology
- SGT
- Configuration
- N
- VDS_Max
- 100 V
- RDS(ON)_Max @VGS=10V
- 4.5 mΩ
- RDS(ON)_Typ @VGS=10V
- 3.7 mΩ
- VGS(th)_Typ
- 3 V
- With ESD
- No
- Die Size (μm×μm)
- 3900*3550
- Gross Die (8" wafer)
- 2008
- Wafer Thickness (μm)
- 150±15
- VGS_Max
- ±20 V
- Ciss_Typ
- 4628 pF
- Coss_Typ
- 1624 pF
- Crss_Typ
- 19 pF
- Qg_Typ
- 61 nC
- Qgs_Typ
- 19.5 nC
- Qgd_Typ
- 8.7 nC
- Tj
- 175 °C
- Manufacturer Remarks
- SGT N
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