SMT10T04ALAFX product image

Product Detail

SMT10T04ALAFX

SineSemi 中晶新源Core Authorized Distributor

Wafer & Bare DieWafer

Specifications

Process Technology
SGT
Configuration
N
VDS_Max
100 V
RDS(ON)_Max @VGS=10V
4.4 mΩ
RDS(ON)_Typ @VGS=10V
3.7 mΩ
VGS(th)_Typ
1.7 V
With ESD
No
Die Size (μm×μm)
3300*2350
Gross Die (8" wafer)
3605
Wafer Thickness (μm)
200±20
VGS_Max
±20 V
RDS(ON)_Typ @VGS=4.5V
4.6 mΩ
RDS(ON)_Max @VGS=4.5V
5.5 mΩ
Ciss_Typ
3763 pF
Coss_Typ
1093 pF
Crss_Typ
31 pF
Qg_Typ
58 nC
Qgs_Typ
9.8 nC
Qgd_Typ
11.7 nC
Tj
150 °C
Manufacturer Remarks
FAB 2 SGT