产品详情
SMT10T06ALAE
中晶新源 SineSemi核心代理商
晶圆/裸片Wafer
参数规格
- 工艺
- SGT
- 结构
- N
- 漏源电压 VDS
- 100 V
- 导通电阻 RDS(ON)@10V 最大
- 5.5 mΩ
- 导通电阻 RDS(ON)@10V 典型
- 4.6 mΩ
- 阈值电压 VGS(th) 典型
- 1.8 V
- With ESD
- No
- Die Size (mm²)
- 3300*2350
- Gross Die (8" wafer)
- 3601
- Wafer Thickness (mm)
- 150±15
- 栅源电压 VGS 最大
- ±20 V
- 导通电阻 RDS(ON)@4.5V 典型
- 5.7 mΩ
- 导通电阻 RDS(ON)@4.5V 最大
- 7.1 mΩ
- 输入电容 Ciss 典型
- 2022 pF
- 输出电容 Coss 典型
- 972 pF
- 反向传输电容 Crss 典型
- 23 pF
- 总栅极电荷 Qg 典型
- 38 nC
- Qgs_Typ
- 5.2 nC
- Qgd_Typ
- 8.1 nC
在线规格书
以下内容整理自原厂规格书，实际参数以原厂正式文件为准。
SMT10T06ALAE (Rev1.4)
100V N-Channel Power MOSFET (Wafer Datasheet)
Product Summary
- V_DS = 100V
- R_DS(ON), max = 4.8mΩ (V_GS = 10V)
- R_DS(ON), max = 5.7mΩ (V_GS = 4.5V)
Potential Applications
- Power Management
- Motor Driving and BMS in Power Tools, E-vehicle
- High frequency switching synchronous rectification
Chip Information
| Parameter |
Value |
| Die Size (with scribe line) |
3300µm × 2350µm |
| Gate Pad Size |
280µm × 432µm |
| Source Pad Size |
Full Metalized Source |
| Scribe Line Width |
80µm |
| Wafer Thickness |
150 ± 15µm |
| Wafer Diameter |
8 inch |
| Passivation |
Yes |
| Front Metal Composition & Thickness |
AlCu, 4.0µm |
| Back Metal Composition & Thickness |
Ti/Ni/Ag, 1.5µm |
| Gross Die (approximately) |
3,601 |
Ordering Information
| Orderable Part Number |
Wafer Description |
| SMT10T06ALAE |
Sampling Tested Wafer |
| SMT10T06ALAE-C |
Full CP Tested Wafer |
Maximum Ratings (@ T_J = 25°C, unless otherwise specified.)
| Parameter |
Symbol |
Value |
Units |
| Drain - Source Voltage |
V_DS |
100 |
V |
| Gate - Source Voltage |
V_GS |
±20 |
V |
| Junction Temperature Range |
T_J |
-55 ~ +175 |
°C |
Electrical Characteristics (@ T_J = 25°C, unless otherwise specified.)
| Parameter |
Symbol |
Test Conditions |
Min |
Typ |
Max |
Units |
| Drain-Source Breakdown Voltage |
V_(BR)DSS |
V_GS = 0V, I_D = 250µA |
100 |
— |
— |
V |
| Zero Gate Voltage Drain Current |
I_DSS |
V_DS = 80V, V_GS = 0V |
— |
— |
1.0 |
µA |
| Gate-Body Leakage Current |
I_GSS |
V_GS = ±20V, V_DS = 0V |
— |
— |
±100 |
nA |
| Gate Threshold Voltage |
V_GS(th) |
V_DS = V_GS, I_D = 250µA |
1.2 |
1.7 |
2.5 |
V |
| Static Drain-Source On-Resistance ^(1) |
R_DS(ON) |
V_GS = 10V, I_D = 20A |
— |
4.6 |
5.5 |
mΩ |
|
|
V_GS = 4.5V, I_D = 15A |
— |
5.7 |
7.1 |
mΩ |
| Diodes Forward Voltage |
V_SD |
I_S = 2.0A, V_GS = 0V |
— |
0.7 |
1.2 |
V |
Dynamic Characteristics
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Units |
| Input Capacitance |
C_iss |
V_DS = 30V, V_GS = 0V, f = 1MHz |
— |
2022 |
— |
pF |
| Output Capacitance |
C_oss |
|
— |
912 |
— |
pF |
| Reverse Transfer Capacitance |
C_rss |
|
— |
23 |
— |
pF |
| Gate Resistance |
R_g |
V_GS = 0V, V_DS = 0V, f = 1MHz |
— |
1.0 |
— |
Ω |
Gate Charge Characteristics
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Units |
| Total Gate Charge |
Q_g |
V_DS = 30V, I_D = 20A |
— |
30 |
— |
nC |
| Gate-Source Charge |
Q_gs |
V_GS = 10V |
— |
5.2 |
— |
nC |
| Gate-Drain Charge |
Q_gd |
|
— |
9.1 |
— |
nC |
| Gate Plateau Voltage |
V_plateau |
|
— |
2.7 |
— |
V |
Drain-Source Diode Characteristics
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Units |
| Body Diode Reverse Recovery Time |
t_rr |
I_S = 20A, di/dt = 100A/µs |
— |
55 |
— |
ns |
| Body Diode Reverse Recovery Charge |
Q_rr |
T_J = 25°C |
— |
102 |
— |
nC |
Notes:
- R_DS(ON) value is referred by the device assembled in PDFN5060-8L.
