SMN1202AUAD product image

Product Detail

SMN1202AUAD

SineSemi 中晶新源Core Authorized Distributor

Wafer & Bare DieWafer

Specifications

Process Technology
Trench
Configuration
N
VDS_Max
12 V
VGS(th)_Typ
0.8 V
With ESD
Yes
Die Size (μm×μm)
3050*1560
Gross Die (8" wafer)
5789
Wafer Thickness (μm)
105±10
VGS_Max
±8 V
RDS(ON)_Typ @VGS=4.5V
2.1 mΩ
RDS(ON)_Max @VGS=4.5V
2.7 mΩ
RDS(ON)_Typ @VGS=2.5V
3.2 mΩ
RDS(ON)_Max @VGS=2.5V
6 mΩ
Qg_Typ
31 nC
Qgs_Typ
7.4 nC
Qgd_Typ
8.7 nC
Tj
150 °C
Manufacturer Remarks
Trench N