Product Detail
BSS123K
SineSemi 中晶新源Core Authorized Distributor
Specifications
- Process Technology
- Trench
- Configuration
- N
- VDS_Max
- 100 V
- RDS(ON)_Max @VGS=10V
- 6600 mΩ
- RDS(ON)_Typ @VGS=10V
- 5100 mΩ
- VGS(th)_Typ
- 1.7 V
- With ESD
- Yes
- Die Size (μm×μm)
- 320*310
- Gross Die (8" wafer)
- 290666
- Wafer Thickness (μm)
- 125±12
- VGS_Max
- ±20 V
- RDS(ON)_Typ @VGS=4.5V
- 5400 mΩ
- RDS(ON)_Max @VGS=4.5V
- 7600 mΩ
- Ciss_Typ
- 23 pF
- Coss_Typ
- 8.7 pF
- Crss_Typ
- 4.9 pF
- Qg_Typ
- 0.84 nC
- Qgs_Typ
- 0.13 nC
- Qgd_Typ
- 0.21 nC
- Tj
- 150 °C
Not sure how to choose? Read the MOSFET Wafer & Bare Die Selection Guide →