Product Detail
SMT10T01AHAE
SineSemi 中晶新源Core Authorized Distributor
Specifications
- Process Technology
- SGT
- Configuration
- N
- VDS_Max
- 100 V
- RDS(ON)_Max @VGS=10V
- 1.35 mΩ
- RDS(ON)_Typ @VGS=10V
- 1.15 mΩ
- VGS(th)_Typ
- 3 V
- With ESD
- No
- Die Size (μm×μm)
- 6300*4550
- Gross Die (8" wafer)
- 943
- Wafer Thickness (μm)
- 150±15
- VGS_Max
- ±20 V
- Ciss_Typ
- 9660 pF
- Coss_Typ
- 3476 pF
- Crss_Typ
- 48 pF
- Qg_Typ
- 140 nC
- Qgs_Typ
- 38 nC
- Qgd_Typ
- 27 nC
- Tj
- 175 °C
- Manufacturer Remarks
- SGT N
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Online Datasheet
Compiled from the manufacturer's datasheet; the official document prevails.
SMT10T01AHAE
100V N-Channel Power MOSFET (Wafer Datasheet)
Product Summary
- VDS = 100V
- RDS(ON), max = 1.3mΩ (VGS = 10V)
Potential Applications
- Power Management
- Motor Driving and BMS in Power Tools, E-vehicle
- High frequency switching synchronous rectification
Chip Information
| Parameter | Value |
|---|---|
| Die Size (with scribe line) | 6300µm × 4550µm |
| Gate Pad Size | 280µm × 432µm |
| Source Pad Size | Full Metalized Source |
| Scribe Line Width | 80µm |
| Wafer Thickness | 150µm ± 15µm |
| Wafer Diameter | 8 inch |
| Passivation | Yes |
| Front Metal Composition & Thickness | AlCu, 4µm |
| Back Metal Composition & Thickness | Ti/Ni/Ag, 1.5µm |
| Gross Die (approximately) | 944 |
Ordering Information
| Orderable Part Number | Wafer Description |
|---|---|
| SMT10T01AHAE | Sampling Tested Wafer |
| SMT10T01AHAE-C | Full CP Tested Wafer |
Maximum Ratings (@ TJ = 25°C, unless otherwise specified.)
| Parameter | Symbol | Value | Units |
|---|---|---|---|
| Drain - Source Voltage | VDS | 100 | V |
| Gate - Source Voltage | VGS | ±20 | V |
| Junction Temperature Range | TJ | -55 ~ +150 | °C |
Electrical Characteristics (@ TJ = 25°C, unless otherwise specified.)
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID = 250µA | 100 | — | — | V |
| Zero Gate Voltage Drain Current | IDSS | VDS = 100V, VGS = 0V | — | — | 1.0 | µA |
| Gate-Body Leakage Current | IGSS | VGS = ±20V, VDS = 0V | — | — | ±100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS = VGS, ID = 250µA | 2.0 | 3.0 | 4.0 | V |
| Static Drain-Source On-Resistance (1) | RDS(ON) | VGS = 10V, ID = 20A | — | 1.3 | 1.6 | mΩ |
| Diodes Forward Voltage | VSD | IS = 2.0A, VGS = 0V | — | 0.7 | 1.0 | V |
Notes:
- RDS(ON) value is referred by the device assembled in TO263-3L.