Product Detail
SMT10T01AHAE
SineSemi 中晶新源Core Authorized Distributor
Specifications
- Process Technology
- SGT
- Configuration
- N
- VDS_Max
- 100 V
- RDS(ON)_Max @VGS=10V
- 1.35 mΩ
- RDS(ON)_Typ @VGS=10V
- 1.15 mΩ
- VGS(th)_Typ
- 3 V
- With ESD
- No
- Die Size (mm²)
- 6300*4550
- Gross Die (8" wafer)
- 943
- Wafer Thickness (mm)
- 150±15
- VGS_Max
- ±20 V
- Ciss_Typ
- 9660 pF
- Coss_Typ
- 3476 pF
- Crss_Typ
- 48 pF
- Qg_Typ
- 140 nC
- Qgs_Typ
- 38 nC
- Qgd_Typ
- 27 nC
Online Datasheet
Compiled from the manufacturer's datasheet; the official document prevails.
SMT10T01AHAE
100V N-Channel Power MOSFET (Wafer Datasheet)
Product Summary
- V_DS = 100V
- R_DS(ON), max = 1.3mΩ (V_GS = 10V)
Potential Applications
- Power Management
- Motor Driving and BMS in Power Tools, E-vehicle
- High frequency switching synchronous rectification
Chip Information
| Parameter | Value |
|---|---|
| Die Size (with scribe line) | 6300µm × 4550µm |
| Gate Pad Size | 280µm × 432µm |
| Source Pad Size | Full Metalized Source |
| Scribe Line Width | 80µm |
| Wafer Thickness | 150µm ± 15µm |
| Wafer Diameter | 8 inch |
| Passivation | Yes |
| Front Metal Composition & Thickness | AlCu, 4µm |
| Back Metal Composition & Thickness | Ti/Ni/Ag, 1.5µm |
| Gross Die (approximately) | 944 |
Ordering Information
| Orderable Part Number | Wafer Description |
|---|---|
| SMT10T01AHAE | Sampling Tested Wafer |
| SMT10T01AHAE-C | Full CP Tested Wafer |
Maximum Ratings (@ T_J = 25°C, unless otherwise specified.)
| Parameter | Symbol | Value | Units |
|---|---|---|---|
| Drain - Source Voltage | V_DS | 100 | V |
| Gate - Source Voltage | V_GS | ±20 | V |
| Junction Temperature Range | T_J | -55 ~ +150 | °C |
Electrical Characteristics (@ T_J = 25°C, unless otherwise specified.)
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V_(BR)DSS | V_GS = 0V, I_D = 250µA | 100 | — | — | V |
| Zero Gate Voltage Drain Current | I_DSS | V_DS = 100V, V_GS = 0V | — | — | 1.0 | µA |
| Gate-Body Leakage Current | I_GSS | V_GS = ±20V, V_DS = 0V | — | — | ±100 | nA |
| Gate Threshold Voltage | V_GS(th) | V_DS = V_GS, I_D = 250µA | 2.0 | 3.0 | 4.0 | V |
| Static Drain-Source On-Resistance ^(1) | R_DS(ON) | V_GS = 10V, I_D = 20A | — | 1.3 | 1.6 | mΩ |
| Diodes Forward Voltage | V_SD | I_S = 2.0A, V_GS = 0V | — | 0.7 | 1.0 | V |
Notes:
- R_DS(ON) value is referred by the device assembled in TO263-3L.