Product Detail

SMT15T02AHTL

SineSemi 中晶新源Core Authorized Distributor

LV & MV MOSFETsTOLLHOT

Specifications

Package: TOLL
Configuration: N
VDS_Max: 150 V
ID: 302 A
RDS(ON)_Max @VGS=10V: 2.6 mΩ
Automotive (Y/N): N
VGS(th)_Typ: 3.4 V
RDS(ON)_Typ @VGS=10V: 2.2 mΩ
VGS_Max: ±20 V
Tj: 175 °C
EAS_Max: 1742 mJ
Ciss_Typ: 8178 pF
Coss_Typ: 1978 pF
Crss_Typ: 25 pF
Qg_Typ: 110 nC
ESD: No
MPQ: 2000 pcs
MOQ: 20000 pcs
App: Motor Drive: Y
App: HF Power: Y
App: General Switch: Y

Not sure how to choose? Read the LV & MV MOSFETs Selection Guide →

Online Datasheet

Compiled from the manufacturer's datasheet; the official document prevails.

SMT15T02AHTL

150V N-Channel Power MOSFET

Features

Low On-Resistance
Excellent FoM (figure of merit)
100% ΔVDS & UIS & Rg Tested

Applications

Motor Drives
High Performance Power Supplies
Hard Switching and High Speed Circuit

Mechanical Data

Green Molding Compound
Moisture Sensitivity: Level 1 per J-STD-020
UL Flammability Classification Rating 94V-0

Product Summary

V_DS	R_DS(ON)_TYP	I_D_MAX
150 V	2.2 mΩ @V_GS = 10V	302 A

TOLL

Ordering Information

Orderable Part Number	Package Type	Device Marking	Form	Quantity (pcs)
SMT15T02AHTL	TOLL	15T02AH	13'' Tape&Reel	2,000

Maximum Ratings (@ T_C = 25°C, unless otherwise specified.)

Parameter	Symbol	Value	Unit
Drain - Source Voltage	V_DS	150	V
Gate - Source Voltage	V_GS	±20	V
Continuous Drain Current (V_GS = 10V) ⁽¹⁾	I_D @ T_C = 25°C	302	A
	I_D @ T_C = 100°C	214	A
Pulsed Drain Current ⁽²⁾	I_DM	1209	A
Single Pulse Avalanche Energy ⁽³⁾	E_AS	1742	mJ
Single Pulse Avalanche Current (L = 0.3mH)	I_AS	71	A
Power Dissipation	P_D @ T_C = 25°C	517	W
	P_D @ T_C = 100°C	259	W
Junction & Storage Temperature Range	T_J, T_STG	-55 ~ +175	°C

Thermal Characteristics

Parameter	Symbol	Typ.	Max.	Unit
Thermal Resistance, Junction-to-Ambient ⁽⁴⁾	R_θJA	20	25	°C/W
Thermal Resistance, Junction-to-Case ⁽⁵⁾	R_θJC	0.22	0.29	°C/W

Electrical Characteristics (@ T_J = 25°C, unless otherwise specified.)

Off Characteristics ⁽⁶⁾

Parameter	Symbol	Test Condition	Min.	Typ.	Max.	Unit
Drain-Source Breakdown Voltage	V_(BR)DSS	V_GS = 0V, I_D = 250µA	150	—	—	V
Zero Gate Voltage Drain Current	I_DSS	V_DS = 150V, V_GS = 0V	—	—	1.0	µA
		T_J = 125°C	—	—	100	µA
Gate-Source Leakage Current	I_GSS	V_GS = ±20V, V_DS = 0V	—	—	±100	nA

On Characteristics ⁽⁶⁾

Parameter	Symbol	Test Condition	Min.	Typ.	Max.	Unit
Gate Threshold Voltage	V_GS(th)	V_GS = V_DS, I_D = 250µA	2.5	3.4	4.5	V
Static Drain-Source On-Resistance	R_DS(ON)	V_GS = 10V, I_D = 80A	—	2.2	2.6	mΩ
Forward Transconductance	g_fs	V_DS = 5.0V, I_D = 20A	—	69	—	S
Diodes Forward Voltage	V_SD	I_S = 2.0A, V_GS = 0V	—	0.7	1.2	V

Dynamic Characteristics ⁽⁷⁾

Parameter	Symbol	Test Condition	Min.	Typ.	Max.	Unit
Input Capacitance	C_iss		—	8178	—	pF
Output Capacitance	C_oss	V_DS = 75V, V_GS = 0V, f = 500KHz	—	1978	—	pF
Reverse Transfer Capacitance	C_rss		—	25	—	pF
Gate Resistance	R_g	V_GS = 0V, V_DS = 0V, f = 1MHz	—	1.1	—	Ω

Switching Characteristics ⁽⁷⁾

Parameter	Symbol	Test Condition	Min.	Typ.	Max.	Unit
Turn-On Delay Time	t_d(on)		—	22	—	ns
Rise Time	t_r	V_GS = 10V, V_DS = 75V	—	21	—	ns
Turn-Off Delay Time	t_d(off)	I_D = 20A, R_GEN = 3.0Ω	—	63	—	ns
Fall Time	t_f		—	28	—	ns

Gate Charge Characteristics ⁽⁷⁾

Parameter	Symbol	Test Condition	Min.	Typ.	Max.	Unit
Total Gate Charge (V_GS = 10V)	Q_g		—	110	—	nC
Total Gate Charge (V_GS = 7.0V)	Q_g		—	80	—	nC
Gate-Source Charge	Q_gs	V_DS = 75V, I_D = 20A	—	33	—	nC
Gate-Drain Charge	Q_gd	V_GS = 10V	—	22.0	—	nC
Gate Plateau Voltage	V_plateau		—	4.5	—	V

Drain-Source Diode Characteristics ⁽⁷⁾

Parameter	Symbol	Test Condition	Min.	Typ.	Max.	Unit
Body Diode Reverse Recovery Time	t_rr	I_F = 20A, dI/dt = 100A/µs, T_J = 25°C	—	91	—	ns
Body Diode Reverse Recovery Charge	Q_rr	T_J = 25°C	—	549	—	nC
Diode Forward Current	I_S	T_C = 25°C	—	—	302	A

Notes:

This current is chip limited, which is calculated based on Rthjc.
This current is calculated on single pulse with 10us Single Pulse.
Defined by design, not subject to production test, E_AS condition: T_J = 25°C, V_DD = 75V, V_GS = 10V, L = 1.0mH.
Device mounted on FR-4 substrate PC board with 2oz copper in 1inch square cooling area.
Thermal resistance from junction to the exposed pad.
Short duration pulse test used to minimize self-heating effect.
Defined by design, not subject to production.

Typical Electrical and Thermal Characteristics

Figure 1: Output Characteristics — I_D vs. V_DS, V_GS = 4.5V / 5.0V / 5.2V / 5.5V / 7.0V / 8.0V / 10V（曲线图略）
Figure 2: Transfer Characteristics — I_D vs. V_GS, V_DS = 3.0V, T_J = 25°C / 175°C（曲线图略）
Figure 3: On-Resistance vs. Gate-Source Voltage — R_DS(on) vs. V_GS, I_D = 80A, T_J = 25°C / 175°C（曲线图略）
Figure 4: On-Resistance vs. Drain Current and Gate Voltage — R_DS(on) vs. I_D, V_GS = 10V, T_J = 25°C / 175°C（曲线图略）
Figure 5: On-Resistance vs. Junction Temperature — Normalized R_DS(on) vs. T_J, V_GS = 10V, I_D = 80A（曲线图略）
Figure 6: Source-Drain Diode Forward Voltage — I_S vs. V_SD, T_J = 25°C / 175°C（曲线图略）
Figure 7: Gate Threshold Variation vs. Junction Temperature — V_GS(th) vs. T_J, I_D = 250µA / 1.0mA（曲线图略）
Figure 8: Gate Charge Characteristics — V_GS vs. Q_g, I_D = 20A（曲线图略）
Figure 9: Capacitance Characteristics — C_T vs. V_DS, C_iss / C_oss / C_rss（曲线图略）
Figure 10: Power Derating — P_D vs. T_C（曲线图略）
Figure 11: Current Derating — I_D vs. T_C（曲线图略）
Figure 12: Safe Operating Area — I_D vs. V_DS, pulse widths 1.0µs / 10µs / 100µs / 1.0ms / 10ms / 100ms / DC, T_J(Max) = 175°C, T_C = 25°C（曲线图略）
Figure 13: Normalized Maximum Transient Thermal Impedance — r(t) vs. Pulse Width (s), δ = 0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse; 1. Duty cycle δ = t₁ / t₂; 2. R_θJC(t) = r(t) × R_θJC（曲线图略）

TOLL Package Outline

Package Outlines

NOTES:

DIMENSION AND TOLERANCE PER ASME Y14.5M, 1994.
ALL DIMENSIONS IN MILLIMETER.
DIMENSIONS "E" AND "D1" DO NOT INCLUDE BURRS OR MOLD FLASH. PROTRUSIONS OR GATE BURRS.

DIM.	MIN.	NOM.	MAX.
A	2.200	2.300	2.400
b	0.650	0.800	0.900
b1	9.650	9.800	9.950
b2	—	0.400 REF	—
c	0.400	0.500	0.600
D	11.480	11.680	11.950
D1	10.250	—	10.700
D2	2.850	—	3.400
E	9.700	9.900	10.100
E1	8.000	—	9.250
e	—	1.200 BSC	—
H1	6.700	7.000	7.300
k	—	3.000 REF	—
k1	—	4.550 REF	—
L	1.350	—	2.100
L1	—	0.700 REF	—
L2	—	0.600 REF	—
L3	0.950	1.200	1.350

（单位：MILLIMETER）

Recommended Soldering Footprint

DIMENSIONS: MILLIMETERS

Overall width: 10.100
Overall height: 13.300
Drain pad width: 8.000
Drain pad height: 2.500 / 2.800
Pin pitch: 1.200
Pin width: 0.800
Pin gap: 0.400

（焊盘图略）

Specifications

Online Datasheet

SMT15T02AHTL

150V N-Channel Power MOSFET

Features

Applications

Mechanical Data

Product Summary

Ordering Information

Maximum Ratings (@ TC = 25°C, unless otherwise specified.)

Thermal Characteristics

Electrical Characteristics (@ TJ = 25°C, unless otherwise specified.)

Off Characteristics (6)

On Characteristics (6)

Dynamic Characteristics (7)

Switching Characteristics (7)

Gate Charge Characteristics (7)

Drain-Source Diode Characteristics (7)

Typical Electrical and Thermal Characteristics

TOLL Package Outline

Package Outlines

Recommended Soldering Footprint

Related Parts

Maximum Ratings (@ T_C = 25°C, unless otherwise specified.)

Electrical Characteristics (@ T_J = 25°C, unless otherwise specified.)

Off Characteristics ⁽⁶⁾

On Characteristics ⁽⁶⁾

Dynamic Characteristics ⁽⁷⁾

Switching Characteristics ⁽⁷⁾

Gate Charge Characteristics ⁽⁷⁾

Drain-Source Diode Characteristics ⁽⁷⁾