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SMT15T02AHTL

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中低压 MOSFETTOLLHOT

参数规格

封装
TOLL
结构
N
漏源电压 VDS
150 V
漏极电流 ID
302 A
导通电阻 RDS(ON)@10V 最大
2.6 mΩ
车规 (Y/N)
N
阈值电压 VGS(th) 典型
3.4 V
导通电阻 RDS(ON)@10V 典型
2.2 mΩ
栅源电压 VGS 最大
±20 V
结温 Tj
175 °C
雪崩能量 EAS 最大
1742 mJ
输入电容 Ciss 典型
8178 pF
输出电容 Coss 典型
1978 pF
反向传输电容 Crss 典型
25 pF
总栅极电荷 Qg 典型
110 nC
ESD
No
最小包装量
2000 pcs
最小订购量
20000 pcs
应用推荐-马达驱动
Y
应用推荐-高频电源
Y
应用推荐-通用开关
Y

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在线规格书

以下内容整理自原厂规格书，实际参数以原厂正式文件为准。

SMT15T02AHTL

150V N-Channel Power MOSFET

Features
  • Low On-Resistance
  • Excellent FoM (figure of merit)
  • 100% ΔVDS & UIS & Rg Tested
Applications
  • Motor Drives
  • High Performance Power Supplies
  • Hard Switching and High Speed Circuit
Mechanical Data
  • Green Molding Compound
  • Moisture Sensitivity: Level 1 per J-STD-020
  • UL Flammability Classification Rating 94V-0
Product Summary
VDS RDS(ON)_TYP I_D_MAX
150 V 2.2 mΩ @VGS = 10V 302 A

TOLL

Ordering Information
Orderable Part Number Package Type Device Marking Form Quantity (pcs)
SMT15T02AHTL TOLL 15T02AH 13'' Tape&Reel 2,000
Maximum Ratings (@ TC = 25°C, unless otherwise specified.)
Parameter Symbol Value Unit
Drain - Source Voltage VDS 150 V
Gate - Source Voltage VGS ±20 V
Continuous Drain Current (VGS = 10V) (1) ID @ TC = 25°C 302 A
ID @ TC = 100°C 214 A
Pulsed Drain Current (2) IDM 1209 A
Single Pulse Avalanche Energy (3) EAS 1742 mJ
Single Pulse Avalanche Current (L = 0.3mH) IAS 71 A
Power Dissipation PD @ TC = 25°C 517 W
PD @ TC = 100°C 259 W
Junction & Storage Temperature Range TJ, TSTG -55 ~ +175 °C
Thermal Characteristics
Parameter Symbol Typ. Max. Unit
Thermal Resistance, Junction-to-Ambient (4) R_θJA 20 25 °C/W
Thermal Resistance, Junction-to-Case (5) R_θJC 0.22 0.29 °C/W

Electrical Characteristics (@ TJ = 25°C, unless otherwise specified.)

Off Characteristics (6)
Parameter Symbol Test Condition Min. Typ. Max. Unit
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 150 — — V
Zero Gate Voltage Drain Current IDSS VDS = 150V, VGS = 0V — — 1.0 µA
TJ = 125°C — — 100 µA
Gate-Source Leakage Current IGSS VGS = ±20V, VDS = 0V — — ±100 nA
On Characteristics (6)
Parameter Symbol Test Condition Min. Typ. Max. Unit
Gate Threshold Voltage VGS(th) VGS = VDS, ID = 250µA 2.5 3.4 4.5 V
Static Drain-Source On-Resistance RDS(ON) VGS = 10V, ID = 80A — 2.2 2.6 mΩ
Forward Transconductance gfs VDS = 5.0V, ID = 20A — 69 — S
Diodes Forward Voltage VSD IS = 2.0A, VGS = 0V — 0.7 1.2 V
Dynamic Characteristics (7)
Parameter Symbol Test Condition Min. Typ. Max. Unit
Input Capacitance Ciss — 8178 — pF
Output Capacitance Coss VDS = 75V, VGS = 0V, f = 500KHz — 1978 — pF
Reverse Transfer Capacitance Crss — 25 — pF
Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz — 1.1 — Ω
Switching Characteristics (7)
Parameter Symbol Test Condition Min. Typ. Max. Unit
Turn-On Delay Time td(on) — 22 — ns
Rise Time tr VGS = 10V, VDS = 75V — 21 — ns
Turn-Off Delay Time td(off) ID = 20A, RGEN = 3.0Ω — 63 — ns
Fall Time tf — 28 — ns
Gate Charge Characteristics (7)
Parameter Symbol Test Condition Min. Typ. Max. Unit
Total Gate Charge (VGS = 10V) Qg — 110 — nC
Total Gate Charge (VGS = 7.0V) Qg — 80 — nC
Gate-Source Charge Qgs VDS = 75V, ID = 20A — 33 — nC
Gate-Drain Charge Qgd VGS = 10V — 22.0 — nC
Gate Plateau Voltage Vplateau — 4.5 — V
Drain-Source Diode Characteristics (7)
Parameter Symbol Test Condition Min. Typ. Max. Unit
Body Diode Reverse Recovery Time trr IF = 20A, dI/dt = 100A/µs, TJ = 25°C — 91 — ns
Body Diode Reverse Recovery Charge Qrr TJ = 25°C — 549 — nC
Diode Forward Current IS TC = 25°C — — 302 A

Notes:

  1. This current is chip limited, which is calculated based on Rthjc.
  2. This current is calculated on single pulse with 10us Single Pulse.
  3. Defined by design, not subject to production test, EAS condition: TJ = 25°C, VDD = 75V, VGS = 10V, L = 1.0mH.
  4. Device mounted on FR-4 substrate PC board with 2oz copper in 1inch square cooling area.
  5. Thermal resistance from junction to the exposed pad.
  6. Short duration pulse test used to minimize self-heating effect.
  7. Defined by design, not subject to production.

Typical Electrical and Thermal Characteristics

  • Figure 1: Output Characteristics — ID vs. VDS, VGS = 4.5V / 5.0V / 5.2V / 5.5V / 7.0V / 8.0V / 10V（曲线图略）
  • Figure 2: Transfer Characteristics — ID vs. VGS, VDS = 3.0V, TJ = 25°C / 175°C（曲线图略）
  • Figure 3: On-Resistance vs. Gate-Source Voltage — RDS(on) vs. VGS, ID = 80A, TJ = 25°C / 175°C（曲线图略）
  • Figure 4: On-Resistance vs. Drain Current and Gate Voltage — RDS(on) vs. ID, VGS = 10V, TJ = 25°C / 175°C（曲线图略）
  • Figure 5: On-Resistance vs. Junction Temperature — Normalized RDS(on) vs. TJ, VGS = 10V, ID = 80A（曲线图略）
  • Figure 6: Source-Drain Diode Forward Voltage — IS vs. VSD, TJ = 25°C / 175°C（曲线图略）
  • Figure 7: Gate Threshold Variation vs. Junction Temperature — VGS(th) vs. TJ, ID = 250µA / 1.0mA（曲线图略）
  • Figure 8: Gate Charge Characteristics — VGS vs. Qg, ID = 20A（曲线图略）
  • Figure 9: Capacitance Characteristics — CT vs. VDS, Ciss / Coss / Crss（曲线图略）
  • Figure 10: Power Derating — PD vs. TC（曲线图略）
  • Figure 11: Current Derating — ID vs. TC（曲线图略）
  • Figure 12: Safe Operating Area — ID vs. VDS, pulse widths 1.0µs / 10µs / 100µs / 1.0ms / 10ms / 100ms / DC, TJ(Max) = 175°C, TC = 25°C（曲线图略）
  • Figure 13: Normalized Maximum Transient Thermal Impedance — r(t) vs. Pulse Width (s), δ = 0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse; 1. Duty cycle δ = t1 / t2; 2. R_θJC(t) = r(t) × R_θJC（曲线图略）

TOLL Package Outline

Package Outlines

NOTES:

  1. DIMENSION AND TOLERANCE PER ASME Y14.5M, 1994.
  2. ALL DIMENSIONS IN MILLIMETER.
  3. DIMENSIONS "E" AND "D1" DO NOT INCLUDE BURRS OR MOLD FLASH. PROTRUSIONS OR GATE BURRS.
DIM. MIN. NOM. MAX.
A 2.200 2.300 2.400
b 0.650 0.800 0.900
b1 9.650 9.800 9.950
b2 — 0.400 REF —
c 0.400 0.500 0.600
D 11.480 11.680 11.950
D1 10.250 — 10.700
D2 2.850 — 3.400
E 9.700 9.900 10.100
E1 8.000 — 9.250
e — 1.200 BSC —
H1 6.700 7.000 7.300
k — 3.000 REF —
k1 — 4.550 REF —
L 1.350 — 2.100
L1 — 0.700 REF —
L2 — 0.600 REF —
L3 0.950 1.200 1.350

（单位：MILLIMETER）

Recommended Soldering Footprint

DIMENSIONS: MILLIMETERS

  • Overall width: 10.100
  • Overall height: 13.300
  • Drain pad width: 8.000
  • Drain pad height: 2.500 / 2.800
  • Pin pitch: 1.200
  • Pin width: 0.800
  • Pin gap: 0.400

（焊盘图略）

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