SMT12T02AHTL product image

Product Detail

SMT12T02AHTL

SineSemi 中晶新源Core Authorized Distributor

LV & MV MOSFETsTOLL
Download Datasheet

Specifications

Package
TOLL
Configuration
N
VDS_Max
120 V
ID
316 A
RDS(ON)_Max @VGS=10V
2.4 mΩ
Automotive (Y/N)
N
VGS(th)_Typ
3 V
RDS(ON)_Typ @VGS=10V
2 mΩ
VGS_Max
±20 V
Tj
150 °C
EAS_Max
740 mJ
Ciss_Typ
7807 pF
Coss_Typ
1632 pF
Crss_Typ
35 pF
Qg_Typ
102 nC
ESD
No
MPQ
2000 pcs
MOQ
20000 pcs
App: Motor Drive
Y
App: HF Power
Y
App: General Switch
Y

Not sure how to choose? Read the LV & MV MOSFETs Selection Guide →

Package & Schematic

SMT12T02AHTL package outline, pin configuration and schematic
Package outline · Pin configuration · Schematic (from SineSemi official datasheet)

Online Datasheet

Compiled from the manufacturer's datasheet; the official document prevails.

SMT12T02AHTL

120V N-Channel Power MOSFET

Product Summary
VDS RDS(ON), max ID, max
120 V 2.4 mΩ @ VGS = 10V 316 A

TOLL

Maximum Ratings (@ TC = 25°C, unless otherwise specified.)
Parameter Symbol Value Unit
Drain - Source Voltage VDS 120 V
Gate - Source Voltage VGS ±20 V
Continuous Drain Current (VGS = 10V) (1) ID TC = 25°C: 316 A
TC = 100°C: 200 A
Pulsed Drain Current (2) IDM 1151 A
Single Pulse Avalanche Energy (3) EAS 740 mJ
Single Pulse Avalanche Current (L = 0.1mH) IAS 65 A
Power Dissipation PD TC = 25°C: 417 W
TC = 100°C: 167 W
Junction & Storage Temperature Range TJ, TSTG -55~+150 °C
Thermal Characteristics
Parameter Symbol Typ Max Unit
Thermal Resistance, Junction-to-Ambient (4) R_θJA 24 30 °C/W
Thermal Resistance, Junction-to-Case (5) R_θJC 0.30 0.39 °C/W

Electrical Characteristics (@ TJ = 25°C, unless otherwise specified.)

Off Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 120 — — V
Zero Gate Voltage Drain Current IDSS VDS = 120V, VGS = 0V — — 1.0 µA
TJ = 125°C — — 100 µA
Gate-Source Leakage Current IGSS VGS = ±20V, VDS = 0V — — ±100 nA
On Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Gate Threshold Voltage VGS(th) VGS = VDS, ID = 250µA 2.0 3.0 4.0 V
Static Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 80A — 2.0 2.4 mΩ
Forward Transconductance gfs VDS = 5.0V, ID = 20A — 55 — S
Diodes Forward Voltage VSD IS = 2.0A, VGS = 0V — 0.7 1.2 V
Dynamic Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Input Capacitance Ciss VDS = 60V, VGS = 0V, f = 1MHz — 7807 — pF
Output Capacitance Coss — 1632 — pF
Reverse Transfer Capacitance Crss — 35 — pF
Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz — 1.5 — Ω
Switching Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Turn-On Delay Time td(on) VGS = 10V, VDS = 60V — 20 — ns
Rise Time tr ID = 80A, RGEN = 3.0 — 23 — ns
Turn-Off Delay Time td(off) — 56 — ns
Fall Time tf — 33 — ns
Gate Charge Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Total Gate Charge (VGS = 10V) Qg VDS = 50V, ID = 20A — 102 — nC
Gate-Source Charge Qgs — 34 — nC
Gate-Drain Charge Qgd — 23 — nC
Gate Plateau Voltage Vplateau — 5.1 — V
Drain-Source Diode Characteristics
Parameter Symbol Test Condition Min Typ Max Unit
Body Diode Reverse Recovery Time trr IS = 80A, di/dt = 100 A/µs — 67 — ns
Body Diode Reverse Recovery Charge Qrr TJ = 25°C — 172 — nC
Diode Forward Current IS TC = 25°C — — 316 A

Notes:

  1. This current is chip limited, which is calculated based on Rthjc.
  2. This current is calculated on single pulse with 10us Single Pulse.
  3. Defined by design, not subject to production test, EAS condition: TJ=25°C, VDD=60V, VGS=10V, L=1.0mH.
  4. Device mounted on FR-4 substrate PC board with 2oz copper in 1inch square cooling area.
  5. Thermal resistance from junction to the exposed pad.
  6. Short duration pulse test used to minimize self-heating effect.
  7. Defined by design, not subject to production.
SMT12T01AHTL2ID374 AEAS_Max2132 mJSMT12T01AHTLID393 AEAS_Max2074 mJSMT12T01AHTLFID395 AEAS_Max2190 mJSMT11T02AHTLID305 AEAS_Max1488 mJSMT13T02AHTLID336 AEAS_Max2016 mJSMT12T01AHTT2ID363 AEAS_Max2560 mJ