Specifications
- Package
- TOLL
- Configuration
- N
- VDS_Max
- 150 V
- ID
- 240 A
- RDS(ON)_Max @VGS=10V
- 4.1 mΩ
- Automotive (Y/N)
- Y
- VGS(th)_Typ
- 3.4 V
- RDS(ON)_Typ @VGS=10V
- 3.4 mΩ
- VGS_Max
- ±20 V
- Tj
- 175 °C
- EAS_Max
- 1796 mJ
- Ciss_Typ
- 6238 pF
- Coss_Typ
- 783 pF
- Crss_Typ
- 23 pF
- Qg_Typ
- 91 nC
- ESD
- No
- MPQ
- 2000 pcs
- MOQ
- 20000 pcs
- App: Motor Drive
- Y
- App: HF Power
- Y
- App: Battery Protection
- Y
- App: General Switch
- Y
Not sure how to choose? Read the LV & MV MOSFETs Selection Guide →
Package & Schematic
Package outline · Pin configuration · Schematic (from SineSemi official datasheet)Online Datasheet
Compiled from the manufacturer's datasheet; the official document prevails.
SMT15T04AHTLQ
150V N-Channel Power MOSFET
Sinesemi Automotive MOSFET — AEC-Q101 Qualified, PPAP Capable, 175°C Operating Temperature
Product Summary
| VDS |
RDS(ON), max |
ID, max |
| 150 V |
4.1 mΩ @ VGS = 10V |
240 A |
TOLL
Features
- N-Channel Enhancement Mode - Logic Level
- AEC-Q101 Qualified, PPAP Capable
- 175°C Operating Temperature
- 100% ∆VDS & UIS & Rg Tested
Ordering Information
| Orderable Part Number |
Package Type |
Device Marking |
Form |
Quantity (pcs) |
| SMT15T04AHTLQ |
TOLL |
15T04AHQ |
13" Tape&Reel |
2,000 |
Maximum Ratings (@ TA = 25°C, unless otherwise specified.)
| Parameter |
Symbol |
Value |
Unit |
| Drain - Source Voltage |
VDS |
150 |
V |
| Gate - Source Voltage |
VGS |
±20 |
V |
| Continuous Drain Current (VGS = 10V) (1) |
ID |
TA = 25°C: 240 |
A |
|
|
TA = 100°C: 162 |
A |
| Pulsed Drain Current (2) |
IDM |
777 |
A |
| Single Pulse Avalanche Energy (3) |
EAS |
1796 |
mJ |
| Single Pulse Avalanche Current (L = 0.1mH) |
IAS |
110 |
A |
| Power Dissipation |
PD |
TA = 25°C: 500 |
W |
|
|
TA = 100°C: 250 |
W |
| Junction & Storage Temperature Range |
TJ, TSTG |
-55 ~ +175 |
°C |
Thermal Characteristics
| Parameter |
Symbol |
Typ |
Max |
Unit |
| Thermal Resistance, Junction-to-Ambient (4) |
R_θJA |
20 |
25 |
°C/W |
| Thermal Resistance, Junction-to-Case (5) |
R_θJC |
0.23 |
0.30 |
°C/W |
Electrical Characteristics (@ TJ = 25°C, unless otherwise specified.)
Off Characteristics (7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Drain-Source Breakdown Voltage |
V(BR)DSS |
VGS = 0V, ID = 250µA |
150 |
— |
— |
V |
| Zero Gate Voltage Drain Current |
IDSS |
VDS = 150V, VGS = 0V |
— |
— |
1.0 |
µA |
|
|
TJ = 125°C |
— |
— |
100 |
µA |
| Gate-Source Leakage Current |
IGSS |
VGS = ±20V, VDS = 0V |
— |
— |
±100 |
nA |
On Characteristics (7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Gate Threshold Voltage |
VGS(th) |
VDS = VGS, ID = 250µA |
2.5 |
3.4 |
4.5 |
V |
| Static Drain-Source On-Resistance |
RDS(on) |
VGS = 10V, ID = 80A |
— |
3.4 |
4.1 |
mΩ |
| Forward Transconductance |
gfs |
VDS = 5.0V, ID = 20A |
— |
58 |
— |
S |
| Diodes Forward Voltage |
VSD |
IS = 2.0A, VGS = 0V |
— |
0.7 |
1.2 |
V |
Dynamic Characteristics (7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Input Capacitance |
Ciss |
VDS = 75V, VGS = 0V, f = 1MHz |
— |
6238 |
8109 |
pF |
| Output Capacitance |
Coss |
|
— |
783 |
1018 |
pF |
| Reverse Transfer Capacitance |
Crss |
|
— |
23 |
46 |
pF |
| Gate Resistance |
Rg |
VGS = 0V, VDS = 0V, f = 1MHz |
— |
2.2 |
— |
Ω |
Switching Characteristics (7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Turn-On Delay Time |
td(on) |
VGS = 10V, VDS = 75V |
— |
20 |
— |
ns |
| Rise Time |
tr |
ID = 80A, RGEN = 3.0Ω |
— |
41 |
— |
ns |
| Turn-Off Delay Time |
td(off) |
|
— |
58 |
— |
ns |
| Fall Time |
tf |
|
— |
44 |
— |
ns |
Gate Charge Characteristics (7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Total Gate Charge (VGS = 10V) |
Qg |
VDS = 75V, ID = 85A |
— |
91 |
118 |
nC |
| Total Gate Charge (VGS = 6.0V) |
Qg |
|
— |
59 |
77 |
nC |
| Gate-Source Charge |
Qgs |
VGS = 10V |
— |
26 |
39 |
nC |
| Gate-Drain Charge |
Qgd |
|
— |
21 |
32 |
nC |
| Gate Plateau Voltage |
Vplateau |
|
— |
4.5 |
— |
V |
Drain-Source Diode Characteristics (7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Body Diode Reverse Recovery Time |
trr |
IS = 80A, di/dt = 100A/µs |
— |
103 |
— |
ns |
| Body Diode Reverse Recovery Charge |
Qrr |
TJ = 25°C |
— |
431 |
— |
nC |
| Diode Forward Current |
IS |
TA = 25°C |
— |
— |
240 |
A |
Notes:
- This current is chip limited, which is calculated based on RθJC.
- This current is calculated on single pulse with 10µs Single Pulse.
- Defined by design, not subject to production test. EAS condition, TJ=25°C, VDS=75V, VGS=10V, L=1.0mH.
- Device mounted on FR-4 substrate PC board with 2oz copper in 1inch square cooling area.
- Thermal resistance from junction to the exposed pad.
- Short duration pulse test used to minimize self-heating effect.
- Defined by design; not subject to production.
