SMT4007ALAD product image

Product Detail

SMT4007ALAD

SineSemi 中晶新源Core Authorized Distributor

Wafer & Bare DieWaferHOT

Specifications

Process Technology
SGT
Configuration
N
VDS_Max
40 V
RDS(ON)_Max @VGS=10V
6.8 mΩ
RDS(ON)_Typ @VGS=10V
5.7 mΩ
VGS(th)_Typ
1.7 V
With ESD
No
Die Size (μm×μm)
1460*1010
Gross Die (8" wafer)
18714
Wafer Thickness (μm)
105±10
VGS_Max
±20 V
RDS(ON)_Typ @VGS=4.5V
7.9 mΩ
RDS(ON)_Max @VGS=4.5V
9.9 mΩ
Ciss_Typ
570 pF
Coss_Typ
359 pF
Crss_Typ
20 pF
Qg_Typ
9 nC
Qgs_Typ
1.8 nC
Qgd_Typ
0.8 nC
Tj
175 °C
Manufacturer Remarks
SGT N

Online Datasheet

Compiled from the manufacturer's datasheet; the official document prevails.

SMT4007ALAD

40V N-Channel Power MOSFET (Wafer Datasheet)

Product Summary
  • VDS = 40V
  • RDS(ON), max = 5.7mΩ (VGS = 10V)
  • RDS(ON), max = 7.9mΩ (VGS = 4.5V)
Chip Information
Parameter Value
Die Size (with scribe line) 1460µm × 1010µm
Gate Pad Size 151µm × 151µm
Source Pad Size Full Metalized Source
Scribe Line Width 80µm
Wafer Thickness 105µm ± 10µm
Wafer Diameter 8 inch
Gross Die (approximately) 19,325
Ordering Information
Orderable Part Number Wafer Description
SMT4007ALAD Sampling Tested Wafer
SMT4007ALAD-C Full CP Tested Wafer
Maximum Ratings (@ TJ = 25°C)
Parameter Symbol Value Units
VDS VDS 40 V
VGS VGS ±20 V
TJ TJ -55 ~ +175 °C
Electrical Characteristics (@ TJ = 25°C)
Parameter Symbol Test Conditions Min Typ Max Units
V(BR)DSS V(BR)DSS ID = 250µA 40 — — V
IDSS IDSS VDS = 40V — — 1.0 µA
IGSS IGSS VGS = ±20V — — ±100 nA
VGS(th) VGS(th) ID = 250µA 1.2 1.7 2.5 V
RDS(ON) (1) RDS(ON) VGS = 10V, ID = 10A — 4.7 6.6 mΩ
VGS = 4.5V, ID = 15A — 7.9 9.8 mΩ
VSD VSD IS = 2A — 0.7 1.0 V

Notes:

  1. RDS(ON) value is referred by the device assembled in PDFN5060-8L.