Product Detail
SMT4005AHAD
SineSemi 中晶新源Core Authorized Distributor
Specifications
- Process Technology
- SGT
- Configuration
- N
- VDS_Max
- 40 V
- RDS(ON)_Max @VGS=10V
- 4.7 mΩ
- RDS(ON)_Typ @VGS=10V
- 3.9 mΩ
- VGS(th)_Typ
- 3 V
- With ESD
- No
- Die Size (μm×μm)
- 1800*1220
- Gross Die (8" wafer)
- 12492
- Wafer Thickness (μm)
- 105±10
- VGS_Max
- ±20 V
- Ciss_Typ
- 982 pF
- Coss_Typ
- 593 pF
- Crss_Typ
- 25 pF
- Qg_Typ
- 14 nC
- Qgs_Typ
- 4.6 nC
- Qgd_Typ
- 2.9 nC
- Tj
- 175 °C
- Manufacturer Remarks
- SGT N
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Online Datasheet
Compiled from the manufacturer's datasheet; the official document prevails.
SMT4005AHAD
40V N-Channel Power MOSFET (Wafer Datasheet)
Product Summary
- VDS = 40V
- RDS(ON), max = 3.9mΩ (VGS = 10V)
Chip Information
| Parameter | Value |
|---|---|
| Die Size (with scribe line) | 1800µm × 1220µm |
| Gate Pad Size | 155µm × 155µm |
| Source Pad Size | Full Metalized Source |
| Scribe Line Width | 80µm |
| Wafer Thickness | 100µm ± 10µm |
| Wafer Diameter | 8 inch |
| Passivation | Yes |
| Front Metal Composition & Thickness | AlCu, 4µm |
| Back Metal Composition & Thickness | Ti/Ni/Ag, 1.3µm |
| Gross Die (approximately) | 12,663 |
| Recommended Package | PDFN5060-8L |
Ordering Information
| Orderable Part Number | Wafer Description |
|---|---|
| SMT4005AHAD | Sampling Tested Wafer |
| SMT4005AHAD-C | Full CP Tested Wafer |
Maximum Ratings (@ TJ = 25°C)
| Parameter | Symbol | Value | Units |
|---|---|---|---|
| VDS | VDS | 40 | V |
| VGS | VGS | ±20 | V |
| TJ | TJ | -55 ~ +175 | °C |
Electrical Characteristics (@ TJ = 25°C)
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| V(BR)DSS | V(BR)DSS | VGS = 0V, ID = 250µA | 40 | — | — | V |
| IDSS | IDSS | VDS = 40V | — | — | 1.0 | µA |
| IGSS | IGSS | VGS = ±20V | — | — | ±100 | nA |
| VGS(th) | VGS(th) | ID = 250µA | 2.0 | 3.0 | 4.0 | V |
| RDS(ON) (1) | RDS(ON) | VGS = 10V, ID = 20A | — | 3.9 | 4.7 | mΩ |
| VSD | VSD | IS = 2A | — | 0.7 | 1.2 | V |
Dynamic Characteristics
Ciss=882pF, Coss=693pF, Crss=25pF, Rg=4.2Ω
Gate Charge Characteristics
Qg=14nC, Qgs=4.4nC (VDS=20V, ID=20A), Qgd=2.9nC, Vplateau=5.2V
Drain-Source Diode Characteristics
trr=30ns, Qrr=13nC (IS=20A, di/dt=100A/µs)
Notes:
- RDS(ON) value is referred by the device assembled in PDFN5060-8L.