产品详情
SMT4005AHAD
中晶新源 SineSemi核心代理商
参数规格
- 工艺
- SGT
- 结构
- N
- 漏源电压 VDS
- 40 V
- 导通电阻 RDS(ON)@10V 最大
- 4.7 mΩ
- 导通电阻 RDS(ON)@10V 典型
- 3.9 mΩ
- 阈值电压 VGS(th) 典型
- 3 V
- With ESD
- No
- Die Size (mm²)
- 1800*1220
- Gross Die (8" wafer)
- 12492
- Wafer Thickness (mm)
- 105±10
- 栅源电压 VGS 最大
- ±20 V
- 输入电容 Ciss 典型
- 982 pF
- 输出电容 Coss 典型
- 593 pF
- 反向传输电容 Crss 典型
- 25 pF
- 总栅极电荷 Qg 典型
- 14 nC
- Qgs_Typ
- 4.6 nC
- Qgd_Typ
- 2.9 nC
在线规格书
以下内容整理自原厂规格书，实际参数以原厂正式文件为准。
SMT4005AHAD
40V N-Channel Power MOSFET (Wafer Datasheet)
Product Summary
- V_DS = 40V
- R_DS(ON), max = 3.9mΩ (V_GS = 10V)
Chip Information
| Parameter | Value |
|---|---|
| Die Size (with scribe line) | 1800µm × 1220µm |
| Gate Pad Size | 155µm × 155µm |
| Source Pad Size | Full Metalized Source |
| Scribe Line Width | 80µm |
| Wafer Thickness | 100µm ± 10µm |
| Wafer Diameter | 8 inch |
| Passivation | Yes |
| Front Metal Composition & Thickness | AlCu, 4µm |
| Back Metal Composition & Thickness | Ti/Ni/Ag, 1.3µm |
| Gross Die (approximately) | 12,663 |
| Recommended Package | PDFN5060-8L |
Ordering Information
| Orderable Part Number | Wafer Description |
|---|---|
| SMT4005AHAD | Sampling Tested Wafer |
| SMT4005AHAD-C | Full CP Tested Wafer |
Maximum Ratings (@ T_J = 25°C)
| Parameter | Symbol | Value | Units |
|---|---|---|---|
| V_DS | V_DS | 40 | V |
| V_GS | V_GS | ±20 | V |
| T_J | T_J | -55 ~ +175 | °C |
Electrical Characteristics (@ T_J = 25°C)
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| V_(BR)DSS | V_(BR)DSS | V_GS = 0V, I_D = 250µA | 40 | — | — | V |
| I_DSS | I_DSS | V_DS = 40V | — | — | 1.0 | µA |
| I_GSS | I_GSS | V_GS = ±20V | — | — | ±100 | nA |
| V_GS(th) | V_GS(th) | I_D = 250µA | 2.0 | 3.0 | 4.0 | V |
| R_DS(ON) ^(1) | R_DS(ON) | V_GS = 10V, I_D = 20A | — | 3.9 | 4.7 | mΩ |
| V_SD | V_SD | I_S = 2A | — | 0.7 | 1.2 | V |
Dynamic Characteristics
C_iss=882pF, C_oss=693pF, C_rss=25pF, R_g=4.2Ω
Gate Charge Characteristics
Q_g=14nC, Q_gs=4.4nC (V_DS=20V, I_D=20A), Q_gd=2.9nC, V_plateau=5.2V
Drain-Source Diode Characteristics
t_rr=30ns, Q_rr=13nC (I_S=20A, di/dt=100A/µs)
Notes:
- R_DS(ON) value is referred by the device assembled in PDFN5060-8L.