SMT300SALPB product image

Product Detail

SMT300SALPB

SineSemi 中晶新源Core Authorized Distributor

Wafer & Bare DieWafer

Specifications

Process Technology
SGT
Configuration
N
VDS_Max
30 V
RDS(ON)_Max @VGS=10V
0.7 mΩ
RDS(ON)_Typ @VGS=10V
0.57 mΩ
VGS(th)_Typ
1.7 V
With ESD
No
Die Size (μm×μm)
3350*2650
Gross Die (8" wafer)
3077
Wafer Thickness (μm)
75±10
VGS_Max
±20 V
RDS(ON)_Typ @VGS=4.5V
0.81 mΩ
RDS(ON)_Max @VGS=4.5V
1 mΩ
Ciss_Typ
6378 pF
Coss_Typ
3769 pF
Crss_Typ
480 pF
Qg_Typ
115 nC
Qgs_Typ
15.4 nC
Qgd_Typ
23 nC
Tj
150 °C
Manufacturer Remarks
SGT With Plating