SMT3001ALAD product image

Product Detail

SMT3001ALAD

SineSemi 中晶新源Core Authorized Distributor

Wafer & Bare DieWafer

Specifications

Process Technology
SGT
Configuration
N
VDS_Max
30 V
RDS(ON)_Max @VGS=10V
1.7 mΩ
RDS(ON)_Typ @VGS=10V
1.4 mΩ
VGS(th)_Typ
1.7 V
With ESD
No
Die Size (μm×μm)
2550*1650
Gross Die (8" wafer)
6494
Wafer Thickness (μm)
105±10
VGS_Max
±20 V
RDS(ON)_Typ @VGS=4.5V
2.1 mΩ
RDS(ON)_Max @VGS=4.5V
2.7 mΩ
Ciss_Typ
3231 pF
Coss_Typ
2186 pF
Crss_Typ
154 pF
Qg_Typ
51 nC
Qgs_Typ
10.4 nC
Qgd_Typ
10.6 nC
Tj
150 °C
Manufacturer Remarks
SGT N