Product Detail
SMT12T07ALAG
SineSemi 中晶新源Core Authorized Distributor
Specifications
- Process Technology
- SGT
- Configuration
- N
- VDS_Max
- 120 V
- RDS(ON)_Max @VGS=10V
- 6.6 mΩ
- RDS(ON)_Typ @VGS=10V
- 5.5 mΩ
- VGS(th)_Typ
- 1.7 V
- With ESD
- No
- Die Size (μm×μm)
- 3300*2350
- Gross Die (8" wafer)
- 3601
- Wafer Thickness (μm)
- 175±15
- VGS_Max
- ±20 V
- RDS(ON)_Typ @VGS=4.5V
- 7.2 mΩ
- RDS(ON)_Max @VGS=4.5V
- 9 mΩ
- Ciss_Typ
- 1887 pF
- Coss_Typ
- 928 pF
- Crss_Typ
- 13 pF
- Qg_Typ
- 31 nC
- Qgs_Typ
- 5.2 nC
- Qgd_Typ
- 7.2 nC
- Tj
- 175 °C
- Manufacturer Remarks
- SGT N
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