SMT10T20ALAE product image

Product Detail

SMT10T20ALAE

SineSemi 中晶新源Core Authorized Distributor

Wafer & Bare DieWafer

Specifications

Process Technology
SGT
Configuration
N
VDS_Max
100 V
RDS(ON)_Max @VGS=10V
18.6 mΩ
RDS(ON)_Typ @VGS=10V
15.5 mΩ
VGS(th)_Typ
1.7 V
With ESD
No
Die Size (mm²)
1800*1220
Gross Die (8" wafer)
12802
Wafer Thickness (mm)
150±15
VGS_Max
±20 V
RDS(ON)_Typ @VGS=4.5V
20 mΩ
RDS(ON)_Max @VGS=4.5V
25 mΩ
Ciss_Typ
554 pF
Coss_Typ
258 pF
Crss_Typ
8.4 pF
Qg_Typ
10.6 nC
Qgs_Typ
1.8 nC
Qgd_Typ
2.5 nC