Product Detail
SMT10T08ALAGX
SineSemi 中晶新源Core Authorized Distributor
Specifications
- Process Technology
- SGT
- Configuration
- N
- VDS_Max
- 100 V
- RDS(ON)_Max @VGS=10V
- 8.2 mΩ
- RDS(ON)_Typ @VGS=10V
- 6.8 mΩ
- VGS(th)_Typ
- 1.7 V
- With ESD
- No
- Die Size (μm×μm)
- 2480*1620
- Gross Die (8" wafer)
- 7026
- Wafer Thickness (μm)
- 175±15
- VGS_Max
- ±20 V
- RDS(ON)_Typ @VGS=4.5V
- 8.6 mΩ
- RDS(ON)_Max @VGS=4.5V
- 10.3 mΩ
- Ciss_Typ
- 1861 pF
- Coss_Typ
- 581 pF
- Crss_Typ
- 21 pF
- Qg_Typ
- 31 nC
- Qgs_Typ
- 5 nC
- Qgd_Typ
- 6.7 nC
- Tj
- 150 °C
- Manufacturer Remarks
- FAB 2 SGT
Not sure how to choose? Read the MOSFET Wafer & Bare Die Selection Guide →