Product Detail
SMT10T03EHAF
SineSemi 中晶新源Core Authorized Distributor
Specifications
- Process Technology
- SGT
- Configuration
- N
- VDS_Max
- 100 V
- RDS(ON)_Max @VGS=10V
- 3.3 mΩ
- RDS(ON)_Typ @VGS=10V
- 2.7 mΩ
- VGS(th)_Typ
- 3 V
- With ESD
- No
- Die Size (μm×μm)
- 3970*3500
- Gross Die (8" wafer)
- 1974
- Wafer Thickness (μm)
- 200±20
- VGS_Max
- ±20 V
- Ciss_Typ
- 4799 pF
- Coss_Typ
- 1256 pF
- Crss_Typ
- 50 pF
- Qg_Typ
- 68 nC
- Qgs_Typ
- 19 nC
- Qgd_Typ
- 15 nC
- Tj
- 150 °C
- Manufacturer Remarks
- FAB 2 SGT
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