Product Detail

SMT4501ALRNSCG

SineSemi 中晶新源Core Authorized Distributor

LV & MV MOSFETsDFN3333-8L-SCG

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Specifications

Package: DFN3333-8L-SCG
Configuration: N
VDS_Max: 45 V
ID: 241 A
RDS(ON)_Max @VGS=10V: 1.2 mΩ
Automotive (Y/N): N
VGS(th)_Typ: 1.7 V
RDS(ON)_Typ @VGS=10V: 1 mΩ
RDS(ON)_Typ @VGS=4.5V: 1.6 mΩ
RDS(ON)_Max @VGS=4.5V: 2 mΩ
VGS_Max: ±20 V
Tj: 175 °C
EAS_Max: 384 mJ
Ciss_Typ: 2736 pF
Coss_Typ: 1458 pF
Crss_Typ: 64 pF
Qg_Typ: 38 nC
ESD: No
MPQ: 5000 pcs
MOQ: 50000 pcs
App: Motor Drive: Y
App: HF Power: Y
App: General Switch: Y

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Package & Schematic

SMT4501ALRNSCG package outline, pin configuration and schematic — Package outline · Pin configuration · Schematic (from SineSemi official datasheet)

Online Datasheet

Compiled from the manufacturer's datasheet; the official document prevails.

SMT4501ALRNSCG

45V N-Channel Power MOSFET

Product Summary

V_DS	R_DS(ON), max	I_D, max
45 V	1.0 mΩ @ V_GS = 10V	241 A
	1.6 mΩ @ V_GS = 4.5V

DFN3333-8L-SCG

Features

Dual Side Cooling with Low R_DS(on) (Typ)
Ultra Low R_DS(on)
Excellent FOM (figure of merit)
Excellent Thermal Performance
100% ΔV_DS & UIS & R_g Tested

Applications

Motor driver
Load switching
High frequency switching, synchronous rectification

Mechanical Data

Green Molding Compound
Moisture Sensitivity: Level 1 per J-STD-020
UL Flammability Classification Rating 94V-0

Ordering Information

Orderable Part Number	Package Type	Device Marking	Form	Quantity (pcs)
SMT4501ALRNSCG	DFN3333-8L-SCG	4501AL	13" Tape&Reel	5,000

Maximum Ratings (@ T_A = 25°C, unless otherwise specified.)

Parameter	Symbol	Value	Unit
Drain - Source Voltage	V_DS	45	V
Gate - Source Voltage	V_GS	±20	V
Continuous Drain Current (V_GS = 10V) ⁽¹⁾	I_D @ T_A = 25°C	241	A
	I_D @ T_C = 100°C	170	A
Pulsed Drain Current ⁽²⁾	I_DM	852	A
Single Pulse Avalanche Energy ⁽³⁾	E_AS	384	mJ
Single Pulse Avalanche Current (L = 0.1mH)	I_AS	55	A
Power Dissipation	P_D @ T_A = 25°C	125	W
	P_D @ T_C = 100°C	63	W
Junction & Storage Temperature Range	T_J, T_STG	-55~+175	°C

Thermal Characteristics

Parameter	Symbol	Typ	Max	Unit
Thermal Resistance, Junction-to-Ambient ⁽⁴⁾	R_θJA	48	60	°C/W
Thermal Resistance, Junction-to-Case, Bottom ⁽⁵⁾	R_θJC	0.90	1.2	°C/W
Thermal Resistance, Junction-to-Case, Top ⁽⁵⁾	R_θJC	0.65	0.88	°C/W

Electrical Characteristics (@ T_J = 25°C, unless otherwise specified.)

Off Characteristics ⁽⁶⁾

Parameter	Symbol	Test Condition	Min	Typ	Max	Units
Drain-Source Breakdown Voltage	V_(BR)DSS	V_GS = 0V, I_D = 250µA	45	—	—	V
Zero Gate Voltage Drain Current	I_DSS	V_DS = 45V, V_GS = 0V	—	—	1.0	µA
		T_J = 125°C	—	—	100	µA
Gate-Source Leakage Current	I_GSS	V_GS = ±20V, V_DS = 0V	—	—	±100	nA

On Characteristics ⁽⁶⁾

Parameter	Symbol	Test Condition	Min	Typ	Max	Units
Gate Threshold Voltage	V_GS(th)	V_GS = V_DS, I_D = 250µA	1.2	1.7	2.5	V
Static Drain-Source On-Resistance	R_DS(on)	V_GS = 10V, I_D = 20A	—	1.0	1.2	mΩ
		V_GS = 4.5V, I_D = 15A	—	1.6	2.0	mΩ
Forward Transconductance	g_fs	V_DS = 5.0V, I_D = 20A	—	61	—	S
Diodes Forward Voltage	V_SD	I_S = 2.0A, V_GS = 0V	—	0.7	1.2	V

Dynamic Characteristics ⁽⁶⁾

Parameter	Symbol	Test Condition	Min	Typ	Max	Units
Input Capacitance	C_iss		—	2736	—	pF
Output Capacitance	C_oss	V_DS = 20V, V_GS = 0V, f = 1MHz	—	1458	—	pF
Reverse Transfer Capacitance	C_rss		—	64	—	pF
Gate Resistance	R_g	V_GS = 0V, V_DS = 0V, f = 1MHz	—	0.90	—	Ω

Switching Characteristics ⁽⁶⁾

Parameter	Symbol	Test Condition	Min	Typ	Max	Units
Turn-On Delay Time	t_d(on)		—	4.6	—	ns
Rise Time	t_r	V_GS = 10V, V_DS = 20V	—	14	—	ns
Turn-Off Delay Time	t_d(off)	I_D = 20A, R_GEN = 3.0Ω	—	25	—	ns
Fall Time	t_f		—	11	—	ns

Gate Charge Characteristics ⁽⁷⁾

Parameter	Symbol	Test Condition	Min	Typ	Max	Units
Total Gate Charge (V_GS = 10V)	Q_g		—	38	—	nC
Total Gate Charge (V_GS = 4.5V)	Q_g	V_DS = 20V, I_D = 20A	—	19.4	—	nC
Gate-Source Charge	Q_gs		—	7.0	—	nC
Gate-Drain Charge	Q_gd		—	5.0	—	nC
Gate Plateau Voltage	V_plateau		—	2.7	—	V

Drain-Source Diode Characteristics ⁽⁶⁾

Parameter	Symbol	Test Condition	Min	Typ	Max	Units
Body Diode Reverse Recovery Time	t_rr	I_S = 20A, di/dt = 100A/µs	—	45	—	ns
Body Diode Reverse Recovery Charge	Q_rr	T_J = 25°C	—	46	—	nC
Diode Forward Current	I_S	T_J = 25°C	—	—	241	A

Notes:

This current is chip limited, which is calculated based on Rθjc.
This current is calculated on single pulse with 10µs Pulse.
Defined by design, not subject to production test. T_J = 25°C, V_DD = 30V, V_GS = 10V, L = 1.0mH.
Device mounted on FR-4 substrate PC board with 2oz copper on 1inch square cooling area.
Thermal resistance from junction to the exposed pad.
Short duration pulse test used to minimize self-heating effect.
Defined by design, not subject to production.

Specifications

Package & Schematic

Online Datasheet

SMT4501ALRNSCG

45V N-Channel Power MOSFET

Product Summary

Features

Applications

Mechanical Data

Ordering Information

Maximum Ratings (@ TA = 25°C, unless otherwise specified.)

Thermal Characteristics

Electrical Characteristics (@ TJ = 25°C, unless otherwise specified.)

Off Characteristics (6)

On Characteristics (6)

Dynamic Characteristics (6)

Switching Characteristics (6)

Gate Charge Characteristics (7)

Drain-Source Diode Characteristics (6)

Related Parts

Maximum Ratings (@ T_A = 25°C, unless otherwise specified.)

Electrical Characteristics (@ T_J = 25°C, unless otherwise specified.)

Off Characteristics ⁽⁶⁾

On Characteristics ⁽⁶⁾

Dynamic Characteristics ⁽⁶⁾

Switching Characteristics ⁽⁶⁾

Gate Charge Characteristics ⁽⁷⁾

Drain-Source Diode Characteristics ⁽⁶⁾