SMT4501CHPWQ product image

Product Detail

SMT4501CHPWQ

SineSemi 中晶新源Core Authorized Distributor

LV & MV MOSFETsAutomotive

Specifications

Configuration
N
VDS_Max
45 V
ID
252 A
RDS(ON)_Max @VGS=10V
1.25 mΩ
Automotive (Y/N)
Y
RDS(ON)_Typ @VGS=10V
1.05 mΩ
VGS_Max
±20 V
Tj
175 °C
EAS_Max
672 mJ
Ciss_Typ
3936 pF
Coss_Typ
2312 pF
Crss_Typ
93 pF
Qg_Typ
52 nC

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Online Datasheet

Compiled from the manufacturer's datasheet; the official document prevails.

SMT4501CHPWQ

45V N-Channel Power MOSFET

Sinesemi Automotive MOSFET — AEC-Q101 Qualified, 175°C, Wettable Flank

Product Summary
VDS RDS(ON), max ID, max
45 V 1.25 mΩ @ VGS = 10V 252 A

PDFN5060-8L-W

Maximum Ratings (@ TA = 25°C, unless otherwise specified.)
Parameter Symbol Value Units
Drain - Source Voltage VDS 45 V
Gate - Source Voltage VGS ±20 V
Continuous Drain Current (VGS = 10V) (1) ID @ TA = 25°C 252 A
ID @ TC = 100°C 178 A
Pulsed Drain Current (2) IDM 1006 A
Single Pulse Avalanche Energy (3) EAS 672 mJ
Single Pulse Avalanche Current (L = 0.1mH) IAS 66 A
Power Dissipation PD @ TA = 25°C 136 W
PD @ TC = 100°C 68 W
Junction & Storage Temperature Range TJ, TSTG -55~+175 °C
Thermal Characteristics
Parameter Symbol Typ Max Unit
Thermal Resistance, Junction-to-Ambient (4) R_θJA 34 43 °C/W
Thermal Resistance, Junction-to-Case (5) R_θJC 0.85 1.1 °C/W

Electrical Characteristics (@ TJ = 25°C, unless otherwise specified.)

Off Characteristics
Parameter Symbol Test Condition Min Typ Max Units
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 45 — — V
VDS = 45V, VGS = 0V — — 1.0 µA
Zero Gate Voltage Drain Current IDSS TJ = 125°C — — 100 µA
Gate-Source Leakage Current IGSS VGS = ±20V, VDS = 0V — — ±100 nA
On Characteristics
Parameter Symbol Test Condition Min Typ Max Units
Gate Threshold Voltage VGS(th) VGS = VDS, ID = 250µA 2.0 — 4.0 V
Static Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 20A — 1.05 1.25 mΩ
Forward Transconductance gfs VDS = 5.0V, ID = 20A — 57 — S
Diodes Forward Voltage VSD IS = 2.0A, VGS = 0V — 0.7 1.2 V
Dynamic Characteristics
Parameter Symbol Test Condition Min Typ Max Units
Input Capacitance Ciss — 3936 5117 pF
Output Capacitance Coss VDS = 20V, VGS = 0V, f = 1MHz — 2312 3006 pF
Reverse Transfer Capacitance Crss — 93 186 pF
Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz — 1.8 — Ω
Switching Characteristics
Parameter Symbol Test Condition Min Typ Max Units
Turn-On Delay Time td(on) — 8.2 — ns
Rise Time tr VDS = 20V, VGS = 20V — 18 — ns
Turn-Off Delay Time td(off) ID = 20A, RGEN = 3.0Ω — 29 — ns
Fall Time tf — 17 — ns
Gate Charge Characteristics
Parameter Symbol Test Condition Min Typ Max Units
Total Gate Charge (VGS = 10V) Qg — 52 68 nC
Gate-Source Charge Qgs VDS = 20V, ID = 20A — 15.9 24 nC
Gate-Drain Charge Qgd — 9.3 14 nC
Gate Plateau Voltage Vplateau — 4.5 — V
Drain-Source Diode Characteristics
Parameter Symbol Test Condition Min Typ Max Units
Body Diode Reverse Recovery Time trr IS = 20A, di/dt = 100A/µs — 59 — ns
Body Diode Reverse Recovery Charge Qrr TJ = 25°C — 70 — nC
Diode Forward Current IS TJ = 25°C — — 193 A

Notes:

  1. This current is chip limited, which is calculated based on Rθjc.
  2. This current is calculated on single pulse with 10µs Pulse & Duty Cycle = 1%.
  3. Defined by design; not subject to production test.
  4. Device mounted on FR4 substrate PC board with 2oz copper on 1inch square cooling area.
  5. Thermal resistance from junction to the exposed pad.
  6. Short duration pulse test used to minimize self-heating effect.
  7. Defined by design, not subject to production.
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