SMT4501ALRNSCG 产品图

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SMT4501ALRNSCG

中晶新源 SineSemi核心代理商

中低压 MOSFETDFN3333-8L-SCG
规格书下载

参数规格

封装
DFN3333-8L-SCG
结构
N
漏源电压 VDS
45 V
漏极电流 ID
241 A
导通电阻 RDS(ON)@10V 最大
1.2 mΩ
车规 (Y/N)
N
阈值电压 VGS(th) 典型
1.7 V
导通电阻 RDS(ON)@10V 典型
1 mΩ
导通电阻 RDS(ON)@4.5V 典型
1.6 mΩ
导通电阻 RDS(ON)@4.5V 最大
2 mΩ
栅源电压 VGS 最大
±20 V
结温 Tj
175 °C
雪崩能量 EAS 最大
384 mJ
输入电容 Ciss 典型
2736 pF
输出电容 Coss 典型
1458 pF
反向传输电容 Crss 典型
64 pF
总栅极电荷 Qg 典型
38 nC
ESD
No
最小包装量
5000 pcs
最小订购量
50000 pcs
应用推荐-马达驱动
Y
应用推荐-高频电源
Y
应用推荐-通用开关
Y

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封装与电路符号

SMT4501ALRNSCG 封装外形、引脚配置与电路符号图
封装外形 · 引脚配置 · 电路符号（源自中晶新源官方 datasheet）

在线规格书

以下内容整理自原厂规格书，实际参数以原厂正式文件为准。

SMT4501ALRNSCG

45V N-Channel Power MOSFET

Product Summary
VDS RDS(ON), max ID, max
45 V 1.0 mΩ @ VGS = 10V 241 A
1.6 mΩ @ VGS = 4.5V

DFN3333-8L-SCG

Features
  • Dual Side Cooling with Low RDS(on) (Typ)
  • Ultra Low RDS(on)
  • Excellent FOM (figure of merit)
  • Excellent Thermal Performance
  • 100% ΔVDS & UIS & Rg Tested
Applications
  • Motor driver
  • Load switching
  • High frequency switching, synchronous rectification
Mechanical Data
  • Green Molding Compound
  • Moisture Sensitivity: Level 1 per J-STD-020
  • UL Flammability Classification Rating 94V-0
Ordering Information
Orderable Part Number Package Type Device Marking Form Quantity (pcs)
SMT4501ALRNSCG DFN3333-8L-SCG 4501AL 13" Tape&Reel 5,000
Maximum Ratings (@ TA = 25°C, unless otherwise specified.)
Parameter Symbol Value Unit
Drain - Source Voltage VDS 45 V
Gate - Source Voltage VGS ±20 V
Continuous Drain Current (VGS = 10V) (1) ID @ TA = 25°C 241 A
ID @ TC = 100°C 170 A
Pulsed Drain Current (2) IDM 852 A
Single Pulse Avalanche Energy (3) EAS 384 mJ
Single Pulse Avalanche Current (L = 0.1mH) IAS 55 A
Power Dissipation PD @ TA = 25°C 125 W
PD @ TC = 100°C 63 W
Junction & Storage Temperature Range TJ, TSTG -55~+175 °C
Thermal Characteristics
Parameter Symbol Typ Max Unit
Thermal Resistance, Junction-to-Ambient (4) R_θJA 48 60 °C/W
Thermal Resistance, Junction-to-Case, Bottom (5) R_θJC 0.90 1.2 °C/W
Thermal Resistance, Junction-to-Case, Top (5) R_θJC 0.65 0.88 °C/W

Electrical Characteristics (@ TJ = 25°C, unless otherwise specified.)

Off Characteristics (6)
Parameter Symbol Test Condition Min Typ Max Units
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = 250µA 45 — — V
Zero Gate Voltage Drain Current IDSS VDS = 45V, VGS = 0V — — 1.0 µA
TJ = 125°C — — 100 µA
Gate-Source Leakage Current IGSS VGS = ±20V, VDS = 0V — — ±100 nA
On Characteristics (6)
Parameter Symbol Test Condition Min Typ Max Units
Gate Threshold Voltage VGS(th) VGS = VDS, ID = 250µA 1.2 1.7 2.5 V
Static Drain-Source On-Resistance RDS(on) VGS = 10V, ID = 20A — 1.0 1.2 mΩ
VGS = 4.5V, ID = 15A — 1.6 2.0 mΩ
Forward Transconductance gfs VDS = 5.0V, ID = 20A — 61 — S
Diodes Forward Voltage VSD IS = 2.0A, VGS = 0V — 0.7 1.2 V
Dynamic Characteristics (6)
Parameter Symbol Test Condition Min Typ Max Units
Input Capacitance Ciss — 2736 — pF
Output Capacitance Coss VDS = 20V, VGS = 0V, f = 1MHz — 1458 — pF
Reverse Transfer Capacitance Crss — 64 — pF
Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz — 0.90 — Ω
Switching Characteristics (6)
Parameter Symbol Test Condition Min Typ Max Units
Turn-On Delay Time td(on) — 4.6 — ns
Rise Time tr VGS = 10V, VDS = 20V — 14 — ns
Turn-Off Delay Time td(off) ID = 20A, RGEN = 3.0Ω — 25 — ns
Fall Time tf — 11 — ns
Gate Charge Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Units
Total Gate Charge (VGS = 10V) Qg — 38 — nC
Total Gate Charge (VGS = 4.5V) Qg VDS = 20V, ID = 20A — 19.4 — nC
Gate-Source Charge Qgs — 7.0 — nC
Gate-Drain Charge Qgd — 5.0 — nC
Gate Plateau Voltage Vplateau — 2.7 — V
Drain-Source Diode Characteristics (6)
Parameter Symbol Test Condition Min Typ Max Units
Body Diode Reverse Recovery Time trr IS = 20A, di/dt = 100A/µs — 45 — ns
Body Diode Reverse Recovery Charge Qrr TJ = 25°C — 46 — nC
Diode Forward Current IS TJ = 25°C — — 241 A

Notes:

  1. This current is chip limited, which is calculated based on Rθjc.
  2. This current is calculated on single pulse with 10µs Pulse.
  3. Defined by design, not subject to production test. TJ = 25°C, VDD = 30V, VGS = 10V, L = 1.0mH.
  4. Device mounted on FR-4 substrate PC board with 2oz copper on 1inch square cooling area.
  5. Thermal resistance from junction to the exposed pad.
  6. Short duration pulse test used to minimize self-heating effect.
  7. Defined by design, not subject to production.
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