SMT20T15AHTS 200V/81A | SineSemi LV & MV MOSFETs

Specifications

Compiled from the manufacturer's datasheet; the official document prevails.

V_DS	R_DS(ON), max	I_D, max
200 V	15.7 mΩ @ V_GS = 10V	81 A

TO263-3L

Parameter	Symbol	Value	Unit
Drain - Source Voltage	V_DS	200	V
Gate - Source Voltage	V_GS	±20	V
Continuous Drain Current (V_GS = 10V) ⁽¹⁾	I_D	T_C = 25°C: 81	A
		T_C = 100°C: 58	A
Pulsed Drain Current ⁽²⁾	I_DM	326	A
Single Pulse Avalanche Energy ⁽³⁾	E_AS	922	mJ
Single Pulse Avalanche Current (L = 0.1mH)	I_AS	55	A
Power Dissipation	P_D	T_C = 25°C: 288	W
		T_C = 100°C: 144	W
Junction & Storage Temperature Range	T_J, T_STG	-55~+175	°C

Parameter	Symbol	Typ	Max	Unit
Thermal Resistance, Junction-to-Ambient ⁽⁴⁾	R_θJA	28	33	°C/W
Thermal Resistance, Junction-to-Case ⁽⁵⁾	R_θJC	0.40	0.52	°C/W

Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
Drain-Source Breakdown Voltage	V_(BR)DSS	V_GS = 0V, I_D = 250µA	200	—	—	V
Zero Gate Voltage Drain Current	I_DSS	V_DS = 200V, V_GS = 0V	—	—	1.0	µA
		T_J = 125°C	—	—	100	µA
Gate-Source Leakage Current	I_GSS	V_GS = ±20V, V_DS = 0V	—	—	±100	nA

Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
Gate Threshold Voltage	V_GS(th)	V_GS = V_DS, I_D = 250µA	2.5	3.4	4.5	V
Static Drain-Source On-Resistance	R_DS(on)	V_GS = 10V, I_D = 20A	—	13.4	15.7	mΩ
Forward Transconductance	g_fs	V_DS = 5.0V, I_D = 20A	—	38	—	S
Diodes Forward Voltage	V_SD	I_S = 2.0A, V_GS = 0V	—	0.7	1.2	V

Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
Input Capacitance	C_iss	V_DS = 100V, V_GS = 0V, f = 1MHz	—	2050	—	pF
Output Capacitance	C_oss		—	297	—	pF
Reverse Transfer Capacitance	C_rss		—	11	—	pF
Gate Resistance	R_g	V_GS = 0V, V_DS = 0V, f = 1MHz	—	2.5	—	Ω

Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
Turn-On Delay Time	t_d(on)	V_GS = 10V, V_DS = 100V	—	14	—	ns
Rise Time	t_r	I_D = 20A, R_GEN = 3.0	—	16	—	ns
Turn-Off Delay Time	t_d(off)		—	28	—	ns
Fall Time	t_f		—	12	—	ns

Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
Total Gate Charge (V_GS = 10V)	Q_g	V_DS = 50V, I_D = 20A	—	31	—	nC
Gate-Source Charge	Q_gs		—	9.8	—	nC
Gate-Drain Charge	Q_gd		—	7.7	—	nC
Gate Plateau Voltage	V_plateau		—	5.2	—	V

Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
Body Diode Reverse Recovery Time	t_rr	I_S = 20A, di/dt = 100 A/µs	—	120	—	ns
Body Diode Reverse Recovery Charge	Q_rr	T_J = 25°C	—	524	—	nC
Diode Forward Current	I_S	T_C = 25°C	—	—	81	A

Notes:

This current is chip limited, which is calculated based on Rthjc.
This current is calculated on single pulse with 10μs Single Pulse.
Defined by design, not subject to production test, EAS condition: TJ=25°C, VDD=100V, VGS=10V, L=1.0mH.
Device mounted on FR-4 substrate PC board with 2oz copper in 1inch square cooling area.
Thermal resistance from junction to the exposed drain pad.
Short duration pulse test used to minimize self-heating effect.
Defined by design, not subject to production.