Product Detail

SMT20T28AHT

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LV & MV MOSFETsTO263-3L

Specifications

Package: TO263-3L
Configuration: N
VDS_Max: 200 V
ID: 60 A
RDS(ON)_Max @VGS=10V: 24 mΩ
VGS(th)_Typ: 3.4 V
RDS(ON)_Typ @VGS=10V: 19.8 mΩ
VGS_Max: ±20 V
Tj: 175 °C
EAS_Max: 567 mJ
Ciss_Typ: 1217 pF
Coss_Typ: 186 pF
Crss_Typ: 11.8 pF
Qg_Typ: 18.9 nC

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Online Datasheet

Compiled from the manufacturer's datasheet; the official document prevails.

SMT20T28AHS(T)

200V N-Channel Power MOSFET

Product Summary

V_DS	R_DS(ON), max	I_D, max	Package
200 V	24 mΩ @ V_GS = 10V	60 A	TO263-3L
200 V	24 mΩ @ V_GS = 10V		TO220-3L

TO220-3L / TO263-3L

Ordering Information

Orderable Part Number	Package Type	Device Marking	Form	Quantity (pcs)
SMT20T28AHS	TO220-3L	20T28AH	Tube	50
SMT20T28AHT	TO263-3L	20T28AH	13" Tape&Reel	1,000

Maximum Ratings (@ T_A = 25°C, unless otherwise specified.)

Parameter	Symbol	Value	Unit
Drain - Source Voltage	V_DS	200	V
Gate - Source Voltage	V_GS	±20	V
Continuous Drain Current (V_GS = 10V) ⁽¹⁾	I_D	T_A = 25°C: 60	A
		T_A = 100°C: 42	A
Pulsed Drain Current ⁽²⁾	I_DM	239	A
Single Pulse Avalanche Energy ⁽³⁾	E_AS	567	mJ
Single Pulse Avalanche Current (L = 0.3mH)	I_AS	44	A
Power Dissipation	P_D	T_A = 25°C: 254	W
		T_A = 100°C: 127	W
Junction & Storage Temperature Range	T_J, T_STG	-55 ~ +175	°C

Thermal Characteristics

Parameter	Symbol	Typ	Max	Unit
Thermal Resistance, Junction-to-Ambient ⁽⁴⁾	R_θJA	30	35	°C/W
Thermal Resistance, Junction-to-Case ⁽⁵⁾	R_θJC	0.45	0.59	°C/W

Electrical Characteristics (@ T_J = 25°C, unless otherwise specified.)

Off Characteristics ⁽⁷⁾

Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
Drain-Source Breakdown Voltage	V_(BR)DSS	V_GS = 0V, I_D = 250µA	200	—	—	V
Zero Gate Voltage Drain Current	I_DSS	V_DS = 200V, V_GS = 0V	—	—	1.0	µA
		T_J = 125°C	—	—	100	µA
Gate-Source Leakage Current	I_GSS	V_GS = ±20V, V_DS = 0V	—	—	±100	nA

On Characteristics ⁽⁷⁾

Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
Gate Threshold Voltage	V_GS(th)	V_DS = V_GS, I_D = 250µA	2.5	3.4	4.5	V
Static Drain-Source On-Resistance	R_DS(on)	V_GS = 10V, I_D = 20A (TO263-3L)	—	19.8	24	mΩ
		V_GS = 10V, I_D = 20A (TO220-3L)	—	20	24	mΩ
Forward Transconductance	g_fs	V_DS = 5.0V, I_D = 20A	—	33	—	S
Diodes Forward Voltage	V_SD	I_S = 2.0A, V_GS = 0V	—	0.7	1.2	V

Dynamic Characteristics ⁽⁷⁾

Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
Input Capacitance	C_iss	V_DS = 100V, V_GS = 0V, f = 1MHz	—	1217	—	pF
Output Capacitance	C_oss		—	186	—	pF
Reverse Transfer Capacitance	C_rss		—	11.8	—	pF
Gate Resistance	R_g	V_GS = 0V, V_DS = 0V, f = 1MHz	—	3.8	—	Ω

Switching Characteristics ⁽⁷⁾

Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
Turn-On Delay Time	t_d(on)	V_GS = 10V, V_DS = 100V	—	10.4	—	ns
Rise Time	t_r	I_D = 20A, R_GEN = 3.0Ω	—	24	—	ns
Turn-Off Delay Time	t_d(off)		—	18.9	—	ns
Fall Time	t_f		—	13.8	—	ns

Gate Charge Characteristics ⁽⁷⁾

Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
Total Gate Charge (V_GS = 10V)	Q_g	V_DS = 100V, I_D = 20A	—	18.9	—	nC
Total Gate Charge (V_GS = 6.0V)	Q_g		—	12.2	—	nC
Gate-Source Charge	Q_gs	V_GS = 10V	—	6.0	—	nC
Gate-Drain Charge	Q_gd		—	4.6	—	nC
Gate Plateau Voltage	V_plateau		—	5.1	—	V

Drain-Source Diode Characteristics ⁽⁷⁾

Parameter	Symbol	Test Condition	Min	Typ	Max	Unit
Body Diode Reverse Recovery Time	t_rr	I_S = 20A, di/dt = 100A/µs	—	102	—	ns
Body Diode Reverse Recovery Charge	Q_rr	T_J = 25°C	—	436	—	nC
Diode Forward Current	I_S	T_A = 25°C	—	—	60	A

Notes:

1-7: Standard notes (RθJC based, 10µs pulse, E_AS T_J=25°C V_DS=100V V_GS=10V L=1.5mH).

Specifications

Online Datasheet

SMT20T28AHS(T)

200V N-Channel Power MOSFET

Product Summary

Ordering Information

Maximum Ratings (@ TA = 25°C, unless otherwise specified.)

Thermal Characteristics

Electrical Characteristics (@ TJ = 25°C, unless otherwise specified.)

Off Characteristics (7)

On Characteristics (7)

Dynamic Characteristics (7)

Switching Characteristics (7)

Gate Charge Characteristics (7)

Drain-Source Diode Characteristics (7)

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