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SMT20T28AHT

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中低压 MOSFETTO263-3L

参数规格

封装
TO263-3L
漏源电压 VDS
200 V
漏极电流 ID
60 A
导通电阻 RDS(ON)@10V 最大
24 mΩ
阈值电压 VGS(th) 典型
3.4 V
导通电阻 RDS(ON)@10V 典型
19.8 mΩ
栅源电压 VGS 最大
±20 V
结温 Tj
175 °C
雪崩能量 EAS 最大
567 mJ
输入电容 Ciss 典型
1217 pF
输出电容 Coss 典型
186 pF
反向传输电容 Crss 典型
11.8 pF
总栅极电荷 Qg 典型
18.9 nC

在线规格书

以下内容整理自原厂规格书，实际参数以原厂正式文件为准。

SMT20T28AHS(T)

200V N-Channel Power MOSFET

Product Summary
V_DS R_DS(ON), max I_D, max Package
200 V 24 mΩ @ V_GS = 10V 60 A TO263-3L
200 V 24 mΩ @ V_GS = 10V TO220-3L

TO220-3L / TO263-3L

Ordering Information
Orderable Part Number Package Type Device Marking Form Quantity (pcs)
SMT20T28AHS TO220-3L 20T28AH Tube 50
SMT20T28AHT TO263-3L 20T28AH 13" Tape&Reel 1,000
Maximum Ratings (@ T_A = 25°C, unless otherwise specified.)
Parameter Symbol Value Unit
Drain - Source Voltage V_DS 200 V
Gate - Source Voltage V_GS ±20 V
Continuous Drain Current (V_GS = 10V) ^(1) I_D T_A = 25°C: 60 A
T_A = 100°C: 42 A
Pulsed Drain Current ^(2) I_DM 239 A
Single Pulse Avalanche Energy ^(3) E_AS 567 mJ
Single Pulse Avalanche Current (L = 0.3mH) I_AS 44 A
Power Dissipation P_D T_A = 25°C: 254 W
T_A = 100°C: 127 W
Junction & Storage Temperature Range T_J, T_STG -55 ~ +175 °C
Thermal Characteristics
Parameter Symbol Typ Max Unit
Thermal Resistance, Junction-to-Ambient ^(4) R_θJA 30 35 °C/W
Thermal Resistance, Junction-to-Case ^(5) R_θJC 0.45 0.59 °C/W

Electrical Characteristics (@ T_J = 25°C, unless otherwise specified.)

Off Characteristics ^(7)
Parameter Symbol Test Condition Min Typ Max Unit
Drain-Source Breakdown Voltage V_(BR)DSS V_GS = 0V, I_D = 250µA 200 — — V
Zero Gate Voltage Drain Current I_DSS V_DS = 200V, V_GS = 0V — — 1.0 µA
T_J = 125°C — — 100 µA
Gate-Source Leakage Current I_GSS V_GS = ±20V, V_DS = 0V — — ±100 nA
On Characteristics ^(7)
Parameter Symbol Test Condition Min Typ Max Unit
Gate Threshold Voltage V_GS(th) V_DS = V_GS, I_D = 250µA 2.5 3.4 4.5 V
Static Drain-Source On-Resistance R_DS(on) V_GS = 10V, I_D = 20A (TO263-3L) — 19.8 24 mΩ
V_GS = 10V, I_D = 20A (TO220-3L) — 20 24 mΩ
Forward Transconductance g_fs V_DS = 5.0V, I_D = 20A — 33 — S
Diodes Forward Voltage V_SD I_S = 2.0A, V_GS = 0V — 0.7 1.2 V
Dynamic Characteristics ^(7)
Parameter Symbol Test Condition Min Typ Max Unit
Input Capacitance C_iss V_DS = 100V, V_GS = 0V, f = 1MHz — 1217 — pF
Output Capacitance C_oss — 186 — pF
Reverse Transfer Capacitance C_rss — 11.8 — pF
Gate Resistance R_g V_GS = 0V, V_DS = 0V, f = 1MHz — 3.8 — Ω
Switching Characteristics ^(7)
Parameter Symbol Test Condition Min Typ Max Unit
Turn-On Delay Time t_d(on) V_GS = 10V, V_DS = 100V — 10.4 — ns
Rise Time t_r I_D = 20A, R_GEN = 3.0Ω — 24 — ns
Turn-Off Delay Time t_d(off) — 18.9 — ns
Fall Time t_f — 13.8 — ns
Gate Charge Characteristics ^(7)
Parameter Symbol Test Condition Min Typ Max Unit
Total Gate Charge (V_GS = 10V) Q_g V_DS = 100V, I_D = 20A — 18.9 — nC
Total Gate Charge (V_GS = 6.0V) Q_g — 12.2 — nC
Gate-Source Charge Q_gs V_GS = 10V — 6.0 — nC
Gate-Drain Charge Q_gd — 4.6 — nC
Gate Plateau Voltage V_plateau — 5.1 — V
Drain-Source Diode Characteristics ^(7)
Parameter Symbol Test Condition Min Typ Max Unit
Body Diode Reverse Recovery Time t_rr I_S = 20A, di/dt = 100A/µs — 102 — ns
Body Diode Reverse Recovery Charge Q_rr T_J = 25°C — 436 — nC
Diode Forward Current I_S T_A = 25°C — — 60 A

Notes:

1-7: Standard notes (RθJC based, 10µs pulse, E_AS T_J=25°C V_DS=100V V_GS=10V L=1.5mH).

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