At the 4th Power Supply Industry Supporting Brand Awards hosted by 21dianyuan in Shenzhen, SineSemi's SGT MOSFET SMT4501ALRNSCG (45V / 1.0 mΩ / 241 A) for high-power-density applications was recognized in the AI server power category.
The package is the distinguishing feature. DFN3333-8L-SCG uses a source-down, center-gate structure: the die is mounted flip-chip so the source potential lands directly on the PCB thermal pad, and with dual-side cooling (Rtjic down to 0.645°C/W) both thermal resistance and heat dissipation beat conventional drain-down solutions. The center-gate layout makes multi-device paralleling straightforward, dynamic parasitics stay low, and the part operates above 1 MHz. Combined with the 1.0 mΩ on-resistance, this leaves clear headroom in PCB utilization and power density.
Award plaque and product renders. Image: SineSemi
Samples of SMT4501ALRNSCG and other parts in the same package: submit a part-number inquiry.
Source: SineSemi Company News · www.sinesemi.com/gsxw/4175.html