To address package cooling as a bottleneck in high-power-density designs, SineSemi has introduced a third-generation (G3) mid-voltage 100–150V SGT MOSFET paired with a TOLT (TO-Leaded Top Side Cooling) package.
The idea behind TOLT is to flip the main heat path from the traditional PCB-bottom route to the top of the package: a top-side metal cooling area couples through thermal interface material (TIM) directly to the system heatsink, moving heat out over a shorter path. The gull-wing leads help improve power-cycling capability and board-level vibration resistance.
Top, bottom and internal views of the TOLT package. Image: SineSemi
TOLT top-side heat-path diagram. Image: SineSemi
In a bench comparison on a three-phase BLDC motor (30°C ambient, 50 A RMS phase current), the TOLT package ran a junction temperature roughly 25°C lower than a TOLL package under the same conditions, with thermal resistance dropping from about 2.08°C/W to about 1.36°C/W. At the die level, G3 lowers gate charge (Qg) by about 10% and Qgd by about 34% versus its G1 equivalents, with package parasitic inductance around 2 nH. The series is shipping in volume in agricultural drones, high-power industrial supplies and drone propulsion, with additional coverage of 5G/6G telecom power, automotive OBC, server hot-swap protection, BMS and light-EV drive. Whether the TOLT top-side-cooled approach fits an existing heatsink arrangement can be assessed by submitting the operating conditions through a part-number inquiry.
Source: SineSemi Product News · www.sinesemi.com/cpxw/4187.html