SMP10T40ALPQ 产品图

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SMP10T40ALPQ

中晶新源 SineSemi核心代理商

中低压 MOSFET车规PDFN5060-8L
规格书下载

参数规格

封装
PDFN5060-8L
结构
P
漏源电压 VDS
-100 V
漏极电流 ID
-34 A
导通电阻 RDS(ON)@10V 最大
40 mΩ
车规 (Y/N)
Y
阈值电压 VGS(th) 典型
-1.8 V
导通电阻 RDS(ON)@10V 典型
30 mΩ
导通电阻 RDS(ON)@4.5V 典型
36 mΩ
导通电阻 RDS(ON)@4.5V 最大
50 mΩ
栅源电压 VGS 最大
±20 V
结温 Tj
175 °C
雪崩能量 EAS 最大
176 mJ
输入电容 Ciss 典型
1402 pF
输出电容 Coss 典型
317 pF
反向传输电容 Crss 典型
14 pF
总栅极电荷 Qg 典型
23 nC
ESD
No
最小包装量
5000 pcs
最小订购量
50000 pcs
应用推荐-马达驱动
Y
应用推荐-高频电源
Y
应用推荐-通用开关
Y

不确定怎么选？阅读《中低压 MOSFET 选型指南》 →

封装与电路符号

SMP10T40ALPQ 封装外形、引脚配置与电路符号图
封装外形 · 引脚配置 · 电路符号（源自中晶新源官方 datasheet）

在线规格书

以下内容整理自原厂规格书，实际参数以原厂正式文件为准。

SMP10T40ALPQ

-100V P-Channel Enhancement Mode Power MOSFET

Sinesemi Automotive MOSFET — AEC-Q101 Qualified, PPAP Capable, 175°C Operating Temperature

Product Summary
VDS RDS(ON), max ID, max
-100 V 40 mΩ @ VGS = -10V -34 A
50 mΩ @ VGS = -4.5V

PDFN5060-8L

Features
  • P-Channel Enhancement Mode - Logic Level
  • AEC-Q101 Qualified, PPAP Capable
  • 175°C Operating Temperature
  • 100% UIS and Rg Tested
Application
  • General Automotive Applications
Ordering Information
Orderable Part Number Package Type Device Marking Form Quantity (pcs)
SMP10T40ALPQ PDFN5060-8L P10T40ALQ 13'' Tape&Reel 5,000 — — — —
Maximum Ratings (@ TC = 25°C, unless otherwise specified.)
Parameter Symbol Value Unit
Drain - Source Voltage VDS -100 V
Gate - Source Voltage VGS ±20 V
Continuous Drain Current (VGS = -10V) (1) ID TC = 25°C: -34 A
TC = 100°C: -24 A
Pulsed Drain Current (2) IDM -135 A
Single Pulse Avalanche Energy (3) EAS 176 mJ
Single Pulse Avalanche Current (L = 0.1mH) IAS -36 A
Power Dissipation PD TC = 25°C: 94 W
TC = 100°C: 47 W
Junction & Storage Temperature Range TJ, TSTG -55 ~ +175 °C
Thermal Characteristics
Parameter Symbol Typ Max Unit
Thermal Resistance, Junction-to-Ambient (4) R_θJA 36 45 °C/W
Thermal Resistance, Junction-to-Case (5) R_θJC 1.2 1.6 °C/W

Electrical Characteristics (@ TJ = 25°C, unless otherwise specified.)

Off Characteristics (6)
Parameter Symbol Test Condition Min Typ Max Unit
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250µA -100 — — V
Zero Gate Voltage Drain Current IDSS VDS = -100V, VGS = 0V — — -1.0 µA
TJ = 125°C — — -100 µA
Gate-Source Leakage Current IGSS VGS = ±20V, VDS = 0V — — ±100 nA
On Characteristics (6)
Parameter Symbol Test Condition Min Typ Max Unit
Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250µA -1.2 -1.8 -2.5 V
Static Drain-Source On-Resistance RDS(on) VGS = -10V, ID = -15A — 30 40 mΩ
VGS = -4.5V, ID = -10A — 36 50 mΩ
Forward Transconductance gfs VDS = -5.0V, ID = -15A — 30 — S
Diodes Forward Voltage VSD IS = -2.0A, VGS = 0V — -0.7 -1.2 V
Dynamic Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Input Capacitance Ciss VDS = -50V, VGS = 0V, f = 1MHz — 1402 1823 pF
Output Capacitance Coss — 317 412 pF
Reverse Transfer Capacitance Crss — 14 28 pF
Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz — 5.4 — Ω
Switching Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Turn-On Delay Time td(on) VGS = -10V, VDS = -50V — 5.3 — ns
Rise Time tr ID = -15A, RGEN = 3.0Ω — 8.5 — ns
Turn-Off Delay Time td(off) — 26 — ns
Fall Time tf — 15 — ns
Gate Charge Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Total Gate Charge (VGS = -10V) Qg VDS = -50V, ID = -15A — 23 30 nC
Total Gate Charge (VGS = -4.5V) Qg — 11 14.3 nC
Gate-Source Charge Qgs VGS = -10V — 4.9 7.4 nC
Gate-Drain Charge Qgd — 4.2 6.3 nC
Gate Plateau Voltage Vplateau — -3.7 — V
Drain-Source Diode Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Body Diode Reverse Recovery Time trr IS = -15A, di/dt = 100A/µs — 53 — ns
Body Diode Reverse Recovery Charge Qrr TJ = 25°C — 103 — nC
Diode Forward Current IS TC = 25°C — — -34 A

Notes:

  1. This current is chip limited, which is calculated based on RθJC.
  2. This current is calculated on single pulse with 10µs Pulse.
  3. Defined by design, not subject to production test.
  4. Device mounted on FR-4 substrate PC board with 2oz copper in 1inch square cooling area.
  5. Thermal resistance from junction to the exposed pad.
  6. Short duration pulse test used to minimize self-heating effect.
  7. Defined by design, not subject to production.
SMP10T40ALUQ雪崩能量 EAS 最大160 mJ漏极电流 ID-32 ASMP10T40ALP雪崩能量 EAS 最大176 mJ漏极电流 ID-32 ASMP6010ALPQ雪崩能量 EAS 最大410 mJ漏极电流 ID-81 ASMP6025ALPQ雪崩能量 EAS 最大144 mJ漏极电流 ID-42 ASMP6050ALPQ雪崩能量 EAS 最大68 mJ漏极电流 ID-25 ABSS84KMQ漏极电流 ID-0.2 A导通电阻 RDS(ON)@10V 最大5900 mΩ