SMP10T40ALP 产品图

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SMP10T40ALP

中晶新源 SineSemi核心代理商

中低压 MOSFETPDFN5060-8L
规格书下载

参数规格

封装
PDFN5060-8L
结构
P
漏源电压 VDS
-100 V
漏极电流 ID
-32 A
导通电阻 RDS(ON)@10V 最大
40 mΩ
车规 (Y/N)
N
阈值电压 VGS(th) 典型
-1.8 V
导通电阻 RDS(ON)@10V 典型
30 mΩ
导通电阻 RDS(ON)@4.5V 典型
36 mΩ
导通电阻 RDS(ON)@4.5V 最大
50 mΩ
栅源电压 VGS 最大
±20 V
结温 Tj
150 °C
雪崩能量 EAS 最大
176 mJ
输入电容 Ciss 典型
1402 pF
输出电容 Coss 典型
317 pF
反向传输电容 Crss 典型
14 pF
总栅极电荷 Qg 典型
23 nC
ESD
No
最小包装量
5000 pcs
最小订购量
50000 pcs
应用推荐-马达驱动
Y
应用推荐-通用开关
Y

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封装与电路符号

SMP10T40ALP 封装外形、引脚配置与电路符号图
封装外形 · 引脚配置 · 电路符号（源自中晶新源官方 datasheet）

在线规格书

以下内容整理自原厂规格书，实际参数以原厂正式文件为准。

SMP10T40ALP

-100V P-Channel Enhancement Mode Power MOSFET

Product Summary
VDS RDS(ON), max ID, max
-100 V 40 mΩ @ VGS = -10V -32 A
50 mΩ @ VGS = -4.5V

PDFN5060-8L

Features
  • Low On-Resistance
  • Excellent FoM (figure of merit)
  • 100% ΔVDS & UIS & Rg tested
Application
  • Loas switch
  • Motor control
  • Switching application
Ordering Information
Orderable Part Number Package Type Device Marking Form Quantity (pcs)
SMP10T40ALP PDFN5060-8L P10T40AL 13'' Tape&Reel 5,000 — — — —
Maximum Ratings (@ TC = 25°C, unless otherwise specified.)
Parameter Symbol Value Unit
Drain - Source Voltage VDS -100 V
Gate - Source Voltage VGS ±20 V
Continuous Drain Current (VGS = -10V) (1) ID TC = 25°C: -32 A
TC = 100°C: -20 A
Pulsed Drain Current (2) IDM -129 A
Single Pulse Avalanche Energy (3) EAS 176 mJ
Single Pulse Avalanche Current (L = 0.1mH) IAS -36 A
Power Dissipation PD TC = 25°C: 78 W
TC = 100°C: 31 W
Junction & Storage Temperature Range TJ, TSTG -55 ~ +150 °C
Thermal Characteristics
Parameter Symbol Typ Max Unit
Thermal Resistance, Junction-to-Ambient (4) R_θJA 36 45 °C/W
Thermal Resistance, Junction-to-Case (5) R_θJC 1.2 1.6 °C/W

Electrical Characteristics (@ TJ = 25°C, unless otherwise specified.)

Off Characteristics (6)
Parameter Symbol Test Condition Min Typ Max Unit
Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID = -250µA -100 — — V
Zero Gate Voltage Drain Current IDSS VDS = -100V, VGS = 0V — — -1.0 µA
TJ = 125°C — — -100 µA
Gate-Source Leakage Current IGSS VGS = ±20V, VDS = 0V — — ±100 nA
On Characteristics (6)
Parameter Symbol Test Condition Min Typ Max Unit
Gate Threshold Voltage VGS(th) VDS = VGS, ID = -250µA -1.2 -1.8 -2.5 V
Static Drain-Source On-Resistance RDS(on) VGS = -10V, ID = -15A — 30 40 mΩ
VGS = -4.5V, ID = -10A — 36 50 mΩ
Forward Transconductance gfs VDS = -5.0V, ID = -15A — 30 — S
Diodes Forward Voltage VSD IS = -2.0A, VGS = 0V — -0.7 -1.2 V
Dynamic Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Input Capacitance Ciss VDS = -50V, VGS = 0V, f = 1MHz — 1402 — pF
Output Capacitance Coss — 317 — pF
Reverse Transfer Capacitance Crss — 14 — pF
Gate Resistance Rg VGS = 0V, VDS = 0V, f = 1MHz — 5.4 — Ω
Switching Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Turn-On Delay Time td(on) VGS = -10V, VDS = -50V — 5.3 — ns
Rise Time tr ID = -15A, RGEN = 3.0Ω — 8.5 — ns
Turn-Off Delay Time td(off) — 26 — ns
Fall Time tf — 15 — ns
Gate Charge Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Total Gate Charge (VGS = -10V) Qg VDS = -50V, ID = -15A — 23 — nC
Total Gate Charge (VGS = -4.5V) Qg — 11 — nC
Gate-Source Charge Qgs VGS = -10V — 4.9 — nC
Gate-Drain Charge Qgd — 4.2 — nC
Gate Plateau Voltage Vplateau — 3.7 — V
Drain-Source Diode Characteristics (7)
Parameter Symbol Test Condition Min Typ Max Unit
Body Diode Reverse Recovery Time trr IS = -15A, di/dt = 100A/µs — 53 — ns
Body Diode Reverse Recovery Charge Qrr TJ = 25°C — 103 — nC
Diode Forward Current IS TC = 25°C — — -32 A

Notes:

  1. This current is chip limited, which is calculated based on RθJC.
  2. This current is calculated on single pulse with 10µs Pulse.
  3. Defined by design, not subject to production test.
  4. Device mounted on FR-4 substrate PC board with 2oz copper in 1inch square cooling area.
  5. Thermal resistance from junction to the exposed pad.
  6. Short duration pulse test used to minimize self-heating effect.
  7. Defined by design, not subject to production.
SMP10T40ALPQ漏极电流 ID-34 A雪崩能量 EAS 最大176 mJSMP10T40ALR漏极电流 ID-23 A雪崩能量 EAS 最大176 mJSMP10T40ALU漏极电流 ID-30 A雪崩能量 EAS 最大160 mJSMP10T40ALUQ漏极电流 ID-32 A雪崩能量 EAS 最大160 mJSMP6010ALP漏极电流 ID-77 A雪崩能量 EAS 最大410 mJSMP6010ALPQ漏极电流 ID-81 A雪崩能量 EAS 最大410 mJ