产品详情
SMP6010ALPQ
中晶新源 SineSemi核心代理商
中低压 MOSFET车规PDFN5060-8L
参数规格
- 封装
- PDFN5060-8L
- 结构
- P
- 漏源电压 VDS
- -60 V
- 漏极电流 ID
- -81 A
- 导通电阻 RDS(ON)@10V 最大
- 10 mΩ
- 车规 (Y/N)
- Y
- 阈值电压 VGS(th) 典型
- -1.8 V
- 导通电阻 RDS(ON)@10V 典型
- 7.2 mΩ
- 导通电阻 RDS(ON)@4.5V 典型
- 9.6 mΩ
- 导通电阻 RDS(ON)@4.5V 最大
- 12.5 mΩ
- 栅源电压 VGS 最大
- ±20 V
- 结温 Tj
- 175 °C
- 雪崩能量 EAS 最大
- 410 mJ
- 输入电容 Ciss 典型
- 3559 pF
- 输出电容 Coss 典型
- 912 pF
- 反向传输电容 Crss 典型
- 36 pF
- 总栅极电荷 Qg 典型
- 47 nC
- ESD
- No
- 最小包装量
- 5000 pcs
- 最小订购量
- 50000 pcs
- 应用推荐-马达驱动
- Y
- 应用推荐-高频电源
- Y
- 应用推荐-通用开关
- Y
不确定怎么选？阅读《中低压 MOSFET 选型指南》 →
封装与电路符号
封装外形 · 引脚配置 · 电路符号（源自中晶新源官方 datasheet）在线规格书
以下内容整理自原厂规格书，实际参数以原厂正式文件为准。
SMP6010ALPQ
-60V P-Channel Enhancement Mode Power MOSFET
Sinesemi Automotive MOSFET — AEC-Q101 Qualified, PPAP Capable, 175°C Operating Temperature
Product Summary
| VDS |
RDS(ON), max |
ID, max |
| -60 V |
10.0 mΩ @ VGS = -10V |
-81 A |
|
12.5 mΩ @ VGS = -4.5V |
|
PDFN5060-8L
Features
- P-Channel Enhancement Mode - Logic Level
- AEC-Q101 Qualified, PPAP Capable
- 175°C Operating Temperature
- 100% UIS and Rg Tested
Application
- General Automotive Applications
Mechanical Data
- Green Molding Compound
- Moisture Sensitivity: Level 1 per J-STD-020
- UL Flammability Classification Rating 94V-0
Ordering Information
| Orderable Part Number |
Package Type |
Device Marking |
Form |
Quantity (pcs) |
| SMP6010ALPQ |
PDFN5060-8L |
P6010ALQ |
13" Tape&Reel |
5,000 |
Maximum Ratings (@ TA = 25°C, unless otherwise specified.)
| Parameter |
Symbol |
Value |
Unit |
| Drain - Source Voltage |
VDS |
-60 |
V |
| Gate - Source Voltage |
VGS |
±20 |
V |
| Continuous Drain Current (VGS = -10V) (1) |
ID |
TA = 25°C: -81 |
A |
|
|
TA = 100°C: -57 |
A |
| Pulsed Drain Current (2) |
IDM |
-323 |
A |
| Single Pulse Avalanche Energy (3) |
EAS |
410 |
mJ |
| Single Pulse Avalanche Current (L = 0.1mH) |
IAS |
-47 |
A |
| Power Dissipation |
PD |
TA = 25°C: 115 |
W |
|
|
TA = 100°C: 58 |
W |
| Junction & Storage Temperature Range |
TJ, TSTG |
-55 ~ +175 |
°C |
Thermal Characteristics
| Parameter |
Symbol |
Typ |
Max |
Unit |
| Thermal Resistance, Junction-to-Ambient (4) |
R_θJA |
35 |
44 |
°C/W |
| Thermal Resistance, Junction-to-Case (5) |
R_θJC |
0.97 |
1.3 |
°C/W |
Electrical Characteristics (@ TJ = 25°C, unless otherwise specified.)
Off Characteristics (7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Drain-Source Breakdown Voltage |
V(BR)DSS |
VGS = 0V, ID = -250µA |
-60 |
— |
— |
V |
| Zero Gate Voltage Drain Current |
IDSS |
VDS = -60V, VGS = 0V |
— |
— |
-1.0 |
µA |
|
|
TJ = 125°C |
— |
— |
-100 |
µA |
| Gate-Source Leakage Current |
IGSS |
VGS = ±20V, VDS = 0V |
— |
— |
±100 |
nA |
On Characteristics (7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Gate Threshold Voltage |
VGS(th) |
VDS = VGS, ID = -250µA |
-1.2 |
-1.8 |
-2.5 |
V |
| Static Drain-Source On-Resistance |
RDS(on) |
VGS = -10V, ID = -20A |
— |
7.2 |
10.0 |
mΩ |
|
|
VGS = -4.5V, ID = -15A |
— |
9.6 |
12.5 |
mΩ |
| Forward Transconductance |
gfs |
VDS = -5.0V, ID = -20A |
— |
48 |
— |
S |
| Diodes Forward Voltage |
VSD |
IS = -2.0A, VGS = 0V |
— |
-0.7 |
-1.2 |
V |
Dynamic Characteristics (7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Input Capacitance |
Ciss |
VDS = -30V, VGS = 0V, f = 1MHz |
— |
3559 |
4626 |
pF |
| Output Capacitance |
Coss |
|
— |
912 |
1186 |
pF |
| Reverse Transfer Capacitance |
Crss |
|
— |
36 |
72 |
pF |
| Gate Resistance |
Rg |
VGS = 0V, VDS = 0V, f = 1MHz |
— |
4.9 |
— |
Ω |
Switching Characteristics (7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Turn-On Delay Time |
td(on) |
VGS = -10V, VDS = -30V |
— |
5.0 |
— |
ns |
| Rise Time |
tr |
ID = -20A, RGEN = 3.0Ω |
— |
12 |
— |
ns |
| Turn-Off Delay Time |
td(off) |
|
— |
67 |
— |
ns |
| Fall Time |
tf |
|
— |
23 |
— |
ns |
Gate Charge Characteristics (7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Total Gate Charge (VGS = -10V) |
Qg |
VDS = -30V, ID = -20A |
— |
47 |
81 |
nC |
| Total Gate Charge (VGS = -4.5V) |
Qg |
|
— |
22 |
28 |
nC |
| Gate-Source Charge |
Qgs |
VGS = -10V |
— |
10 |
15 |
nC |
| Gate-Drain Charge |
Qgd |
|
— |
5.0 |
7.5 |
nC |
| Gate Plateau Voltage |
Vplateau |
|
— |
-3.0 |
— |
V |
Drain-Source Diode Characteristics (7)
| Parameter |
Symbol |
Test Condition |
Min |
Typ |
Max |
Unit |
| Body Diode Reverse Recovery Time |
trr |
IS = -20A, di/dt = 100A/µs |
— |
43 |
— |
ns |
| Body Diode Reverse Recovery Charge |
Qrr |
TJ = 25°C |
— |
59 |
— |
nC |
| Diode Forward Current |
IS |
TA = 25°C |
— |
— |
-81 |
A |
Notes:
- This current is chip limited, which is calculated based on RθJC.
- This current is calculated on single pulse with 10µs Pulse.
- Defined by design, not subject to production test. TJ=25°C, VDS=-30V, VGS=-10V, L=1.0mH.
- Device mounted on FR-4 substrate PC board with 2oz copper in 1inch square cooling area.
- Thermal resistance from junction to the exposed drain pad.
- Short duration pulse test used to minimize self-heating effect.
- Defined by design; not subject to production.
